Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAFM-compatible near-field scanning microwave microscope with separated excitation and sensing probes
108
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We present the design and experimental results of a near-field scanning microwave microscope (NSMM) working at a frequency of 1GHz. Our microscope is unique in that the sensing probe is separated from the excitation electrode to significantly suppress the common-mode signal. Coplanar waveguides were patterned onto a silicon nitride cantilever interchangeable with atomic force microscope (AFM) tips, which are robust for high speed scanning. In the contact mode that we are currently using, the numerical analysis shows that contrast comes from both the variation in local dielectric properties and the sample topography. Our microscope demonstrates the ability to achieve high resolution microwave images on buried structures, as well as nano-particles, nano-wires, and biological samples.
rate research
Read More
We present a detailed modeling and characterization of our scalable microwave nanoprobe, which is a micro-fabricated cantilever-based scanning microwave probe with separated excitation and sensing electrodes. Using finite-element analysis, the tip-sample interaction is modeled as small impedance changes between the tip electrode and the ground at our working frequencies near 1GHz. The equivalent lumped elements of the cantilever can be determined by transmission line simulation of the matching network, which routes the cantilever signals to 50 Ohm feed lines. In the microwave electronics, the background common-mode signal is cancelled before the amplifier stage so that high sensitivity (below 1 atto-Farad capacitance changes) is obtained. Experimental characterization of the microwave probes was performed on ion-implanted Si wafers and patterned semiconductor samples. Pure electrical or topographical signals can be realized using different reflection modes of the probe.
We present a design for a tunneling-current-assisted scanning near-field microwave microscope. For stable operation at cryogenic temperatures, making a small and rigid microwave probe is important. Our coaxial resonator probe has a length of approxomately 30 mm and can fit inside the 2-inch bore of a superconducting magnet. The probe design includes an insulating joint, which separates DC and microwave signals without degrading the quality factor. By applying the SMM to the imaging of an electrically inhomogeneous superconductor, we obtain the spatial distribution of the microwave response with a spatial resolution of approximately 200 nm. Furthermore, we present an analysis of our SMM probe based on a simple lumped-element circuit model along with the near-field microwave measurements of silicon wafers having different conductivities.
In applications of scanning probe microscopy, images are acquired by raster scanning a point probe across a sample. Viewed from the perspective of compressed sensing (CS), this pointwise sampling scheme is inefficient, especially when the target image is structured. While replacing point measurements with delocalized, incoherent measurements has the potential to yield order-of-magnitude improvements in scan time, implementing the delocalized measurements of CS theory is challenging. In this paper we study a partially delocalized probe construction, in which the point probe is replaced with a continuous line, creating a sensor which essentially acquires line integrals of the target image. We show through simulations, rudimentary theoretical analysis, and experiments, that these line measurements can image sparse samples far more efficiently than traditional point measurements, provided the local features in the sample are enough separated. Despite this promise, practical reconstruction from line measurements poses additional difficulties: the measurements are partially coherent, and real measurements exhibit nonidealities. We show how to overcome these limitations using natural strategies (reweighting to cope with coherence, blind calibration for nonidealities), culminating in an end-to-end demonstration.
Mixing of atoms at the interface was studied for Mn/Fe magnetic hetero-epitaxial layers on Cu(001) by scanning tunneling microscopy/spectroscopy. The formation of a surface alloy was observed when the Mn layer was thinner than 3 atomic layers. From the fourth layer, Fe segregation is suppressed, and a pure Mn surface appears. Accordingly, spectroscopic measurements revealed the electronic difference between the surface alloy and Mn layers. The surface electronic structure of the fourth Mn layer is slightly different from that of the fifth layers, which is attributed to the hybridization of the fourth layer with the underneath Fe-Mn alloy.
Theoretical understanding of scanning tunnelling microscope (STM) measurements involve electronic structure details of the STM tip and the sample being measured. Conventionally, the focus has been on the accuracy of the electronic state simulations of the sample, whereas the STM tip electronic state is typically approximated as a simple spherically symmetric $ s $ orbital. This widely used $ s $ orbital approximation has failed in recent STM studies where the measured STM images of subsurface impurity wave functions in silicon required a detailed description of the STM tip electronic state. In this work, we show that the failure of the $ s $ orbital approximation is due to the indirect band-gap of the sample material silicon (Si), which gives rise to complex valley interferences in the momentum space of impurity wave functions. Based on direct comparison of STM images computed from multi-million-atom electronic structure calculations of impurity wave functions in direct (GaAs) and indirect (Si) band-gap materials, our results establish that whilst the selection of STM tip orbital only plays a minor qualitative role for the direct band gap GaAs material, the STM measurements are dramatically modified by the momentum space features of the indirect band gap Si material, thereby requiring a quantitative representation of the STM tip orbital configuration. Our work provides new insights to understand future STM studies of semiconductor materials based on their momentum space features, which will be important for the design and implementation of emerging technologies in the areas of quantum computing, photonics, spintronics and valleytronics.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
