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Register a new userEvidence for multiple impurity bands in sodium-doped silicon MOSFETs
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We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.
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We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.
Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems.
We have grown single crystals of Na$_x$Ca$_y$CoO$_2$ and determined their superstructures as a function of composition using neutron and x-ray diffraction. Inclusion of Ca$^{2+}$ stabilises a single superstructure across a wide range of temperatures and concentrations. The superstructure in the Na$^+$ layers is based on arrays of divacancy clusters with Ca$^{2+}$ ions occupying the central site, and it has an ideal concentration Na$_{4/7}$Ca$_{1/7}$CoO$_2$. Previous measurements of the thermoelectric properties on this system are discussed in light of this superstructure. Na$_{4/7}$Ca$_{1/7}$CoO$_2$ corresponds to the maximum in thermoelectric performance of this system.
We have observed the metal-insulator transition in the strongly correlated insulator FeSi with the chemical substitution of Al at the Si site. The magnetic susceptibility, heat capacity, and field dependent conductivity are measured for Al concentrations ranging from 0 to 0.08. For concentrations greater than 0.01 we find metallic properties quantitatively similar to those measured in Si:P with the exception of a greatly enhanced quasiparticle mass. Below 2 K the temperature and field dependent conductivity can be completely described by the theory of disordered Fermi Liquids.
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