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Register a new userCurrent-voltage characteristics in donor-acceptor systems: Implications of a spatially varying electric field
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We have studied the transport properties of a molecular device composed of donor and acceptor moieties between two electrodes on either side. The device is considered to be one-dimensional with different on-site energies and the non-equilibrium properties are calculated using Landauers formalism. The current-voltage characteristics is found to be asymmetric with a sharp Negative Differential Resistance at a critical bias on one side and very small current on the other side. The NDR arises primarily due to the bias driven electronic structure change from one kind of insulating phase to another through a highly delocalized conducting phase. Our model can be considered to be the simplest to explain the experimental current-voltage characteristics observed in many molecular devices.
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We demonstrate that rectification ratios (RR) of >250 (>1000) at biases of 0.5 V (1.2 V) are achievable at the two-molecule limit for donor-acceptor bilayers of pentacene on fullerene on Cu using scanning tunneling spectroscopy and microscopy. Using first-principles calculations, we show that the system behaves as a molecular Schottky diode with a tunneling transport mechanism from semiconducting pentacene to Cu-hybridized metallic fullerene. Low-bias RRs vary by two orders-of-magnitude at the edge of these molecular heterojunctions due to increased Stark shifts and confinement effects.
The quantum transport via a donor (D)-bridge (B)-acceptor (A) single molecule is studied using density functional theory in conjunction with the Landauer-B{u}ttiker formalism. Asymmetric electrical response for opposite biases is observed resulting in significant rectification in current. The intrinsic dipole moment induced by substituent side groups in the molecule leads to enhanced/reduced polarization of the system under a forward/reverse applied potential, thus asymmetry in the charge distribution and the electronic current under bias. Under a forward bias, the energy gap between the D and A frontier orbitals closes and the current increases rapidly; whereas under a reverse bias, the D-A gap widens and the current remains small.
It is shown that the excitation of charge carriers by ac electric field with zero average driving leads to a direct electric current in quantum well structures. The current emerges for both linear and circular polarization of the ac electric field and depends on the field polarization and frequency. We present a micoscopic model and an analytical theory of such a nonlinear electron transport in quantum wells with structure inversion asymmetry. In such systems, dc current is induced by ac electric field which has both the in-plane and out-of-plane components. The ac field polarized in the interface plane gives rise to a direct current if the quantum well is subjected to an in-plane static magnetic field.
Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias resistance and magnetic transition in these films have been reported recently, the non-equilibrium current-voltage ($I-V$) transport characteristics at the transition remains unexplored. Here we report the $I-V$ characteristics at zero magnetic field of a prototypical Ag/Au nanocluster film close to its resistivity transition at the critical temperature $T_{C}$ of $approx160$ K. The $I-V$ characteristics become strongly hysteretic close to the transition and exhibit a temperature-dependent critical current scale beyond which the resistance increases rapidly. Intriguingly, the non-equilibrium transport regime consists of a series of nearly equispaced resistance steps when the drive current exceeds the critical current. We have discussed the similarity of these observations with resistive transitions in ultra-thin superconducting wires via phase slip centres.
Experimental results of rectification of a constant wave radio frequency (RF) current flowing in a single-layered ferromagnetic wire are presented. We show that a detailed external magnetic field dependence of the RF current induced a direct-current voltage spectrum. The mechanism of the rectification is discussed in a term of the spin transfer torque, and the rectification is closely related to resonant spin wave excitation with the assistant of the spin-polarized RF current. The micromagnetic simulation taking into account the spin transfer torque provides strong evidence which supports the generation of spin wave excitation by the RF current.
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