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Register a new userCurrent-voltage characteristics in Ag/Au nanostructures at resistive transitions
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Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias resistance and magnetic transition in these films have been reported recently, the non-equilibrium current-voltage ($I-V$) transport characteristics at the transition remains unexplored. Here we report the $I-V$ characteristics at zero magnetic field of a prototypical Ag/Au nanocluster film close to its resistivity transition at the critical temperature $T_{C}$ of $approx160$ K. The $I-V$ characteristics become strongly hysteretic close to the transition and exhibit a temperature-dependent critical current scale beyond which the resistance increases rapidly. Intriguingly, the non-equilibrium transport regime consists of a series of nearly equispaced resistance steps when the drive current exceeds the critical current. We have discussed the similarity of these observations with resistive transitions in ultra-thin superconducting wires via phase slip centres.
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The resistive transition in nanocomposite films of silver (Ag) nanoclusters of ~ 1 nm diameter embedded in gold (Au) matrix exhibits an anomalous resistance peak at the onset of the transition, even for transition temperatures as high as 260 K. The maximum value of the resistance ranges between ~ 30% - 300% above that of the normal state depending on devices as well as lead configuration within a single device. The excess resistance regime was observed in about 10% of the devices, and extends from ~ 10 - 100 K. Application of magnetic field of 9 T was found to partially suppress the excess resistance. From the critical current behavior, as well as negative differential resistance in the current-voltage characteristics, we discuss the possibility of interacting phase slip centers and alternate physical scenarios that may cause the excess resistance in our system.
We have studied the transport properties of a molecular device composed of donor and acceptor moieties between two electrodes on either side. The device is considered to be one-dimensional with different on-site energies and the non-equilibrium properties are calculated using Landauers formalism. The current-voltage characteristics is found to be asymmetric with a sharp Negative Differential Resistance at a critical bias on one side and very small current on the other side. The NDR arises primarily due to the bias driven electronic structure change from one kind of insulating phase to another through a highly delocalized conducting phase. Our model can be considered to be the simplest to explain the experimental current-voltage characteristics observed in many molecular devices.
We investigate the transitions induced by external current fluctuations on a small probe quantum system. The rates for the transitions between the energy states are calculated using the real-time Keldysh formalism for the density matrix evolution. We especially detail the effects of the third cumulant of current fluctuations inductively coupled to a quantum bit and propose a setup for detecting the frequency-dependent third cumulant through the transitions it induces.
Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injected into the device. In this work, we present a new experimental technique to quantify directly the SOT based on the measurement of non-linearities of the dc current-voltage (IV) characteristics in Hall bar devices employing a simple instrumentation. Through the analysis of the IV curves, the technique provides directly the linearity of the effective fields with current, the detection of the current range in which the thermal effects can be relevant, the appearance of misalignments artefacts when the symmetry relations of SOT are not fulfilled, and the conditions for the validity of the single domain approximations, which are not considered in switching current and second harmonic generation state-of-the-art experiments. We have studied the SOT induced antidamping and field-like torques in Ta/Co/Pt asymmetric stacks with perpendicular magnetic anisotropy.
We argue that giant jumps of current at finite voltages observed in disordered samples of InO, TiN and YSi manifest a bistability caused by the overheating of electrons. One of the stable states is overheated and thus low-resistive, while the other, high-resistive state is heated much less by the same voltage. The bistability occurs provided that cooling of electrons is inefficient and the temperature dependence of the equilibrium resistance, R(T), is steep enough. We use experimental R(T) and assume phonon mechanism of the cooling taking into account its strong suppression by disorder. Our description of details of the I-V characteristics does not involve adjustable parameters and turns out to be in a quantitative agreement with the experiments. We propose experiments for more direct checks of this physical picture.
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