No Arabic abstract
The intermediate valence compound YbAl3 exhibits a broad magnetic excitation with characteristic energy E1 ~ 50meV, of order of the Kondo energy (TK ~ 600-700K). In the low temperature (T < Tcoh ~ 40K) Fermi liquid state, however, a new magnetic excitation arises at E2 ~ 33meV, which lies in the hybridization gap that exists in this compound. We show, using inelastic neutron scattering on a single-crystal sample, that while the scattering at energies near E1 has the momentum (Q-) dependence expected for interband scattering across the indirect gap, the scattering near E2 is independent of Q. This suggests that it arises from a spatially-localized excitation in the hybridization gap.
We report inelastic neutron scattering measurements aimed at investigating the origin of the temperature-induced paramagnetism in the narrow-gap semiconductor FeSb2. We find that inelastic response for energies up to 60 meV and at temperatures 4.2 K, 300 K and 550 K is essentially consistent with the scattering by lattice phonon excitations. We observe no evidence for a well-defined magnetic peak corresponding to the excitation from the non-magnetic S = 0 singlet ground state to a state of magnetic multiplet in the localized spin picture. Our data establish the quantitative limit of S_{eff}^2 < 0.25 on the fluctuating local spin. However, a broad magnetic scattering continuum in the 15 meV to 35 meV energy range is not ruled out by our data. Our findings make description in terms of the localized Fe spins unlikely and suggest that paramagnetic susceptibility of itinerant electrons is at the origin of the temperature-induced magnetism in FeSb2.
In the analysis of the heavy electron systems, theoretical models with c-f hybridization gap are often used. We point out that such a gap does not exist and the simple picture with the hybridization gap is misleading in the metallic systems, and present a correct picture by explicitly constructing an effective band model of YbAl_3. Hamiltonian consists of a nearly free electron model for conduction bands which hybridize with localized f-electrons, and includes only a few parameters. Density of states, Sommerfeld coefficient, f-electron number and optical conductivity are calculated and compared with the band calculations and the experiments.
In heavy fermions the relaxation dynamics of photoexcited carriers has been found to be governed by the low energy indirect gap, E$_{g}$, resulting from hybridization between localized moments and conduction band electrons. Here, carrier relaxation dynamics in a prototype Kondo insulator YbB${}_{12}$ is studied over large range of temperatures and over three orders of magnitude. We utilize the intrinsic non-linearity of dynamics to quantitatively determine microscopic parameters, such as electron-hole recombination rate. The extracted value reveals that hybridization is accompanied by a strong charge transfer from localized 4f-levels. The results imply the presence of a hybridization gap up to temperatures of the order of E$_{g}$/k$_{B}approx200$ K, which is extremely robust against electronic excitation. Finally, below 20 K the data reveal changes in the low energy electronic structure, attributed to short-range antiferromagnetic correlations between the localized levels.
The recent discovery of topological Kondo insulating behaviour in strongly correlated electron systems has generated considerable interest in Kondo insulators both experimentally and theoretically. The Kondo semiconductors CeT2Al10 (T=Fe, Ru and Os) possessing a c-f hybridization gap have received considerable attention recently because of the unexpected high magnetic ordering temperature of CeRu2Al10 (TN=27 K) and CeOs2Al10 (TN=28.5 K) and the Kondo insulating behaviour observed in the valence fluctuating compound CeFe2Al10 with a paramagnetic ground state down to 50 mK. We are investigating this family of compounds, both in polycrystalline and single crystal form, using inelastic neutron scattering to understand the role of anisotropic c-f hybridization on the spin gap formation as well as on their magnetic properties. We have observed a clear sign of a spin gap in all three compounds from our polycrystalline study as well as the existence of a spin gap above the magnetic ordering temperature in T=Ru and Os. Our inelastic neutron scattering studies on single crystals of CeRu2Al10 and CeOs2Al10 revealed dispersive gapped spin wave excitations below TN. Analysis of the spin wave spectrum reveals the presence of strong anisotropic exchange, along the c-axis (or z-axis) stronger than in the ab-plane. These anisotropic exchange interactions force the magnetic moment to align along the c-axis, competing with the single ion crystal field anisotropy, which prefers moments along the a-axis. In the paramagnetic state (below 50 K) of the Kondo insulator CeFe2Al10, we have also observed dispersive gapped magnetic excitations which transform into quasi-elastic scattering on heating to 100 K. We will discuss the origin of the anisotropic hybridization gap in CeFe2Al10 based on theoretical models of heavy-fermion semiconductors.
A Kondo lattice of strongly interacting f-electrons immersed in a sea of conduction electrons remains one of the unsolved problems in condensed matter physics. The problem concerns localized f-electrons at high temperatures which evolve into hybridized heavy quasi-particles at low temperatures, resulting in the appearance of a hybridization gap. Here, we unveil the presence of hybridization gap in Ce2RhIn8 and find the surprising result that the temperature range at which this gap becomes visible by angle-resolved photoemission spectroscopy is nearly an order of magnitude lower than the temperature range where the magnetic scattering becomes larger than the phonon scattering, as observed in the electrical resistivity measurements. Furthermore the spectral gap appears at temperature scales nearly an order of magnitude higher than the coherent temperature. We further show that when replacing In by Cd to tune the local density of states at the Ce3+ site, there is a strong reduction of the hybridization strength, which in turn leads to the suppression of the hybridization gap at low temperatures.