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Register a new userElectronic Structure of Samarium Monopnictides and Monochalcogenides
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The electronic structures of SmX (X=N, P, As, Sb, Bi, O, S, Se, Te, Po)compounds are calculated using the self-interaction corrected local-spin density approximation. The Sm ion is described with either five or six localized $f$-electrons while the remaining electrons form bands, and the total energies of these scenarios are compared. With five localized $f$-electrons a narrow $f$-band is formed in the vicinity of the Fermi level leading to an effective intermediate valence. This scenario is the ground state of all the pnictides as well as SmO. With six localized $f$-electrons, the chalcogenides are semiconductors, which is the ground state of SmS, SmSe and SmTe. Under compression the Sm chalcogenides undergo first order transitions with destabilization of the $f$ states into the intermediate valence state, the bonding properties of which are well reproduced by the present theory.
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Pressure induced isostructural insulator to metal transition for SmS is characterised by the presence of an intermediate valence state at higher pressure which cannot be captured by the density functional theory. As a direct outcome of including the charge and spin fluctuations incorporated in dynamical mean field theory, we see the emergence of insulating and metallic phases with increasing pressure as a function of changing valence. This is accompanied by significantly improved predictions of the equilibrium lattice constants and bulk moduli for all Sm-monochalcogenides verifying experiments. Nudged Elastic Band analysis reveals the insulating states to have a finite quasiparticle weight, decreasing as the gap closes rendering the transition to be not Mott-like, and classifies these materials as correlated band insulators. The difference between the discontinuous and continuous natures of these transitions can be attributed to the closeness of the sharply resonant Sm-4f peaks to the fermi level in the predicted metallic states in SmS as compared to SmSe and SmTe.
We present results of an ab-initio study of the electronic structure of 140 rare earth compounds. Specifically we predict an electronic phase diagram of the entire range of rare earth monopnictides and monochalcogenides, composed of metallic, semiconducting and heavy fermion-like regions, and exhibiting valency transitions brought about by a complex interplay between ligand chemistry and lanthanide contraction. The calculations exploit the combined effect of a first-principles methodology, which can adequately describe the dual character of electrons, itinerant vs. localized, and high throughput computing made possible by the increasing available computational power. Our findings, including the predicted intermediate valent compounds SmO and TmSe, are in overall excellent agreement with the available experimental data. The accuracy of the approach, proven e.g. through the lattice parameters calculated to within 1.5% of the experimental values, and its ability to describe localization phenomena in solids, makes it a competitive atomistic simulation approach in the search for and design of new materials with specific physical properties and possible technological applications.
We present first-principles investigation of the electronic structure and magnetic properties of uranium monochalcogenides: US, USe, UTe. The calculations were performed by using recently developed LDA+U+SO method in which both Coulomb and spin-orbit interactions have been taken into account in rotationally invariant form. We discuss the problem of choice of the Coulomb interaction value. The calculated [111] easy axes agree with those experimentally observed. The electronic configuration 5$f^3$ was found for all uranium compounds under investigation.
We study the electronic structure of the ladder compounds (SrCa)CuO 14-24-41 and SrCuO 123. LDA calculations for both give similar Cu 3d-bands near the Fermi energy. The hopping parameters estimated by fitting LDA energy bands show a strong anisotropy between the t_perp t_par intra-ladder hopping and small inter-ladder hopping. A downfolding method shows that this anisotropy arises from the ladder structure.The conductivity perpendicular to the ladders is computed assuming incoherent tunneling giving a value close to experiment.
Recent theoretical and experimental studies suggest that SmB$_6$ is the first topological Kondo insulator: A material in which the interaction between localized and itinerant electrons renders the bulk insulating at low temperature, while topological surface states leave the surface metallic. While this would elegantly explain the materials puzzling conductivity, we find the experimentally observed candidates for both predicted topological surface states to be of trivial character instead: The surface state at $bar{Gamma}$ is very heavy and shallow with a mere $sim 2$ meV binding energy. It exhibits large Rashba splitting which excludes a topological nature. We further demonstrate that the other metallic surface state, located at $bar{X}$, is not an independent in-gap state as supposed previously, but part of a massive band with much higher binding energy (1.7 eV). We show that it remains metallic down to 1 K due to reduced hybridization with the energy-shifted surface 4$f$ level.
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