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Register a new userLarge negative magnetoresistance in thiospinel CuCrZrS4
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We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS$_{4}$. Electrical resistivity increased with decreasing temperature according to the form proportional to $textrm{exp}(T_{0}/T)^{1/2} $, derived from variable range hopping with strong electron-electron interaction. Resistivity under magnetic fields was expressed by the same form with the characteristic temperature T0 decreasing with increasing magnetic field. Magnetoresistance ratio $rho (T,0)/rho(T,H)$ is 1.5 at 100 K for H=90 kOe and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. Possible mechanism of the large magnetoresistance is discussed.
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Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report negative magnetoresistance and signature of ferromagnetic fluctuations in a prototypical kagome metal CoSn, which features a flat band in proximity to the Fermi level. We find that the magnetoresistance is dictated by electronic correlations via Fermi level tuning. Combining with first principles and model calculations, we establish flat band-induced correlation effects in a multi-orbital electronic system, which opens new routes to realize unconventional superconducting and topological states in geometrically frustrated metals.
Crystal structure of spinel compound CuIr$_{2}$S$_{4}$ was examined by powder X-ray diffraction for the insulating phase below the metal-insulator transition at $T_{MI}$ = 230 K. The superstructure spots are reproduced by considering the displacement of Ir atoms. A model for the ionic ordering of Ir$^{4+}$ and Ir$^{3+}$ with the same number is proposed for the insulating phase on the basis of the structural analysis. The model suggests that the structural change at $T_{MI}$ is driven by the formation Ir$^{4+}$ dimers. In addition, we found that the superstructure spots becomes significantly weak below 60 K, without any significant effects on electric and magnetic properties. Possible mechanism for the transition is discussed.
Electrical resistivity ($rho$), magnetoresistance (MR), magnetization, thermopower and Hall effect measurements on the single crystal Gd$_{2}$PdSi$_3$, crystallizing in an AlB$_2$-derived hexagonal structure are reported. The well-defined minimum in $rho$ at a temperature above Neel temperature (T$_N$= 21 K) and large negative MR below $sim$ 3T$_N$, reported earlier for the polycrystals, are reproducible even in single crystals. Such features are generally uncharacteristic of Gd alloys. In addition, we also found interesting features in other data, e.g., two-step first-order-like metamagnetic transitions for the magnetic field along [0001] direction. The alloy exhibits anisotropy in all these properties, though Gd is a S-state ion.
A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic field eventually suppresses the insulating behavior and allows BaMn$_2$Bi$_2$ to re-enter a metallic state. This effect is seemingly unrelated to any field induced magnetic phase transition, as measurements of magnetic susceptibility and specific heat did not find any anomaly as a function of magnetic fields at temperatures above $2,mathrm{K}$. The LNMR appears in both current-in-plane and current-out-of-plane settings, and Hall effects suggest that its origin lies in an extreme sensitivity of conduction processes of holelike carriers to the infinitesimal field-induced canting of the sublattice magnetization. The LNMR-induced metallic state may thus be associated with the breaking of the antiferromagnetic parity-time symmetry by perpendicular magnetic fields and/or the intricate multi-orbital electronic structure of BaMn$_2$Bi$_2$.
Negative magnetoresistance (NMR) induced by the Adler-Bell-Jackiw anomaly is regarded as the most prominent quantum signature of Weyl semimetals when electrical field $E$ is collinear with the external magnetic field $B$. In this article, we report universal NMR in nonmagnetic, centrosymmetric transition metal dipnictides MPn$_{2}$ (M=Nb and Ta; Pn=As and Sb), in which the existence of Weyl fermions can be explicitly excluded. Using temperature-dependent magnetoresistance, Hall and thermoelectric coefficients of Nernst and Seebeck effects, we determine that the emergence of the NMR phenomena in MPn$_{2}$ is coincident with a Lifshitz transition, corresponding to the formation of unique electron-hole-electron ($e$-$h$-$e$) pockets along the $I-L-I$ direction. First-principles calculations reveal that, along the $I-L-I$ line, the $d_{xy}$ and $d_{x^{2}-y^{2}}$ orbitals of the transition metal form tilted nodal rings of band crossing well below the Fermi level. Strong spin-orbital coupling gaps all the crossing points and creates the characteristic $e$-$h$-$e$ structure, making MPn$_{2}$ a topological semimetal with $mathbb{Z}_2$ indices of [0;(111)]. By excluding the weak localization contribution of the bulk states, we conclude that the universal NMR in MPn$_{2}$ may have an exotic origin in topological surface states, which appears in pairs with opposite spin-momentum locking on nontrivial surfaces.
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