A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible due to the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in asymmetrically doped structures. The photocurrent arises due to optical spin orientation of free carriers in QWs with spin splitting in k-space. It is shown that the effect can be applied to probe the macroscopic in-plane symmetry of low dimensional structures and allowing to conclude on Rashba or Dresselhaus terms in the Hamiltonian.
We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions from the Rashba and Dresselhaus terms. We then determine the parameters by fitting tight-binding numerical results obtained using the quantitative nanoelectronic modeling tool, NEMO-3D. We describe the relevant parameters as a function of applied electric field and well width in our numerical simulations. For a silicon membrane, we find the bulk Rashba parameter to be linear in field, $alpha = alpha^1E_z$ with $alpha^1 simeq 2times$ 10 $^{-5}$nm$^{-2}$. The dominant contribution to the spin-orbit splitting is from Dresselhaus-type terms, and the magnitude for a typical flat SiGe/Si/SiGe quantum well can be as high as 1$mu$eV.
Spin kinetics in $n$-type InAs quantum wells under intense terahertz laser fields is investigated by developing fully microscopic kinetic spin Bloch equations via the Floquet-Markov theory and the nonequilibrium Greens function approach, with all the relevant scattering, such as the electron-impurity, electron-phonon, and electron-electron Coulomb scattering explicitly included. We find that a {em finite} steady-state terahertz spin polarization induced by the terahertz laser field, first predicted by Cheng and Wu [Appl. Phys. Lett. {bf 86}, 032107 (2005)] in the absence of dissipation, exists even in the presence of all the scattering. We further discuss the effects of the terahertz laser fields on the spin relaxation and the steady-state spin polarization. It is found that the terahertz laser fields can {em strongly} affect the spin relaxation via hot-electron effect and the terahertz-field-induced effective magnetic field in the presence of spin-orbit coupling. The two effects compete with each other, giving rise to {em non-monotonic} dependence of the spin relaxation time as well as the amplitude of the steady state spin polarization on the terahertz field strength and frequency. The terahertz field dependences of these quantities are investigated for various impurity densities, lattice temperatures, and strengths of the spin-orbit coupling. Finally, the importance of the electron-electron Coulomb scattering on spin kinetics is also addressed.
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal damping of the amplitude of Shubnikov-de Haas oscillations, we measure a light mass of $0.061m_e$ at a density of $2.2times10^{11}$ cm$^{-2}$. We confirm the theoretically predicted dependence of increasing mass with density and by extrapolation we find an effective mass of $sim0.05m_e$ at zero density, the lightest effective mass for a planar platform that demonstrated spin qubits in quantum dots.
Quantum efficiency studies for various wavelength and various technical metal surfaces were carried out in a dedicated unbaked vacuum chamber. Copper, magnesium, aluminium and aluminium-lithium photocathodes were irradiated by two different high power, high repetition rate, laser systems. We have observed an emission of electrons for photon energy below the work function of the material. This is explained by multiple photon absorption at the photocathode. We have not observed any degradation of the QE for those materials, but an improvement when irradiating them over a long period of time. This is contrary to observations made in RF photoguns.
The heating effect of terahertz pulse with various frequencies and intensities on the heavy water solution is investigated using the molecular dynamics simulation. Resonant absorptions are found for both heavy water and light water, but at a different resonant frequency which is about 16 THz for heavy water and 21 THz for light water. This resonant phenomenon can be explained perfectly by the collective rotational modes that may release water molecules from hydrogen bonding. The findings not only illustrate the heating mechanism of heavy water solution under the terahertz pulse irradiation, but also demonstrate a novel difference between light water and heavy water that could have potential applications.