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Register a new userLow temperature annealing studies of Ga1-xMnxAs
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High- and low-field magneto-transport measurements, as well as SQUID measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. We observe a large enhancement of ferromagnetism when the samples are annealed at an optimal temperature, typically about 280 0C. Such optimal annealing leads to an increase of Curie temperature, accompanied by an increase of both the conductivity and the saturation magnetization. A decrease of the coercive field and of magnetoresistivity is also observed for Ga1-xMnxAs annealed at optimal conditions. We suggest that the experimental results reported in this paper are related to changes in the domain structure of Ga1-xMnxAs.
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Specific heat measurements were used to study the magnetic phase transition in Ga1-xMnxAs. Two different types of Ga1-xMnxAs samples have been investigated. The sample with a Mn concentration of 1.6% shows insulating behavior, and the sample with a Mn concentration of 2.6% is metallic. The temperature dependence of the specific heat for both samples reveals a pronounced lambda-shaped peak near the Curie temperature, which indicates a second-order phase transition in these samples. The critical behavior of the specific heat for Ga1-xMnxAs samples is consistent with the mean-field behavior with Gaussian fluctuations of the magnetization in the close vicinity of TC.
The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC is proportional to p^{gamma}, where the exponent gamma = 0.19 pm 0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of gamma is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K) and the Curie temperature of the ferromagnet (T_C = 55.1 +- 0.2 K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field.
By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy of state-of-the-art ab initio methods in predicting the magnetic characteristics of dilute magnetic insulators.
We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above the optimum, we note n > 3, similar behavior to certain inhomogeneous systems. This observation of atypical behavior agrees well with characteristic features attributable to spherical resonance from metallic inclusions from optical spectroscopy measurements.
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