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Register a new userNegative Magnetoresistance in Granular Bi - HTSC with Trapped Magnetic Fields
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Magnetoresistive properties of granular Bi-based HTSC with trapped magnetic fields are investigated in the temperature region near superconducting transition . The effect of trapped field and transport current values and orientations on the field dependence of magnetoresistance is studied. It is found that for the magnetic field parallel and the current perpendicular to trapping inducing field the field dependence of magnetoresistance is nonmonotonic and magnetoresistance turns out to be negative for small fields. The magnetoresistance sign inversion field increases roughly linear with the trapped magnetic field and slightly decrease with transport current. The results are explained in the framework of model of magnetic flux trapping in granules or superconducting loops embedded in weak links matrix.
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The temperature and field dependences of the trapped magnetic fields and of the frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-based magnetron films are investigated. It is found that in the resistive transition region of granular Bi-HTSC the trapped magnetic fields become highly inhomogeneous and alternating in sign at scale of less than 50 microns. Unlike ceramic the films have critical temperature of trapping lower than the upper temperature of magnetoresistance disappearance. The experimental results are explained by a model in which the magnetic fields are trapped in superconducting loops embedded in Josephson weak links medium. The loops nature which is essentially different for films and ceramics is discussed. Observed temperature and field dependences of trapped field are in good agreement with those calculated for normal law of the loops distribution on critical fields.
We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS$_{4}$. Electrical resistivity increased with decreasing temperature according to the form proportional to $textrm{exp}(T_{0}/T)^{1/2} $, derived from variable range hopping with strong electron-electron interaction. Resistivity under magnetic fields was expressed by the same form with the characteristic temperature T0 decreasing with increasing magnetic field. Magnetoresistance ratio $rho (T,0)/rho(T,H)$ is 1.5 at 100 K for H=90 kOe and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. Possible mechanism of the large magnetoresistance is discussed.
A polarity-dependent reversible change in the current-voltage characteristics between states corresponding to different values of the excess current Iexc is observed for bias voltages of several hundred millivolts in YBaCuO-Ag point contacts in the current-carrying state.
A quaternary compound Bi3O2S2Cl, which consists of novel [BiS2Cl]2-layers, is reported. It adopts a layered structure of the space group I4/mmm (No. 139) with lattice parameters: a = 3.927(1) {AA}, c = 21.720(5) {AA}. In this compound, bismuth and chlorine atoms form an infinite planar layer, which is unique among the bismuth halides. Superconductivity is observed in both polycrystals and single crystals, and is significantly enhanced in the samples prepared with less sulfur or at higher temperatures. By tuning the content of sulfur, Bi3O2S2Cl can be converted from a semiconductor into a superconductor. The superconducting critical temperature ranges from 2.6 K to 3.5 K. Our discovery of the [BiS2Cl]2- layer opens another door in searching for the bismuth compounds with novel physical properties.
Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observed pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a new contribution of microscopic disorder in the occurrence of novel phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.
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