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Register a new userSubstitution induced pinning in MgB_2 superconductor doped with SiC nano-particles
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By doping MgB_2 superconductor with SiC nano-particles, we have successfully introduced pinning sites directly into the crystal lattice of MgB_2 grains (intra-grain pinning). It became possible due to the combination of counter-balanced Si and C co-substitution for B, leading to a large number of intra-granular dislocations and the dispersed nano-size impurities induced by the substitution. The magnetic field dependence of the critical current density was significantly improved in a wide temperature range, whereas the transition temperature in the sample MgB_2(SiC)_x having x = 0.34, the highest doping level prepared, dropped only by 2.6 K.
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We report the synthesis and variation of superconductivity parameters such as transition temperature Tc, upper critical field Hc, critical current density Jc, irreversibility field Hirr and flux pinning parameter (Fp) for the MgB2-xCx system with nano-Carbon doping up to x=0.20. Carbon substitutes successfully on boron site and results in significant enhancement of Hirr and Jc(H). Resistivity measurements reveal a continuous decrease in Tc under zero applied field, while the same improves remarkably at higher fields with an increase in nano-C content for MgB2-xCx system. The irreversibility field value (Hirr) is 7.6 & 6.6 Tesla at 5 and 10K respectively for the pristine sample, which is enhanced to 13.4 and 11.0 Tesla for x = .08 sample at same temperatures. Compared to undoped sample, critical current density (Jc) for the x=0.08 nano-Carbon doped sample is increased by a factor of 24 at 10K at 6 Tesla field.
Superconducting MgB2 strands with nanometer-scale SiC additions have been investigated systematically using transport and magnetic measurements. A comparative study of MgB2 strands with different nano-SiC addition levels has shown C-doping-enhanced critical current density Jc through enhancements in the upper critical field, Hc2, and decreased anisotropy. The critical current density and flux pinning force density obtained from magnetic measurements were found to greatly differ from the values obtained through transport measurements, particularly with regards to magnetic field dependence. The differences in magnetic and transport results are largely attributed to connectivity related effects. On the other hand, based on the scaling behavior of flux pinning force, there may be other effective pinning centers in MgB2 strands in addition to grain boundary pinning.
We investigated the effect of SiC nano-particle doping on the crystal lattice structure, critical temperature T_c, critical current density J_c, and flux pinning in MgB_2 superconductor. A series of MgB_{2-x}(SiC)_{x/2} samples with x = 0 to 1.0 were fabricated using in-situ reaction process. The contraction of the lattice and depression of T_c with increasing SiC doping level remained rather small due to the counter-balanced effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intra-grain defects and highly dispersed nano-inclusions within the grains which can act as effective pinning centers for vortices, improving J_c behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and a local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB_{2-x}(SiC)_{x/2} superconductors.
The high field magnetization and magneto transport measurements are carried out to determine the critical superconducting parameters of MgB2-xCx system. The synthesized samples are pure phase and the lattice parameters evaluation is carried out using the Rietveld refinement. The R-T(H) measurements are done up to a field of 140 kOe. The upper critical field values, Hc2 are obtained from this data based upon the criterion of 90% of normal resistivity i.e. Hc2=H at which Rho=90%Rho; where RhoN is the normal resistivity i.e., resistivity at about 40 K in our case. The Werthamer-Helfand-Hohenberg (WHH) prediction of Hc(0) underestimates the critical field value even below than the field up to which measurement is carried out. After this the model, the Ginzburg Landau theory (GL equation) is applied to the R-T(H) data which not only calculates the Hc2(0) value but also determines the dependence of Hc2 on temperature in the low temperature high field region. The estimated Hc(0)=157.2 kOe for pure MgB2 is profoundly enhanced to 297.5 kOe for the x=0.15 sample in MgB2-xCx series. Magnetization measurements are done up to 120 kOe at different temperatures and the other parameters like irreversibility field, Hirr and critical current density Jc(H) are also calculated. The nano carbon doping results in substantial enhancement of critical parameters like Hc2, Hirr and Jc(H) in comparison to the pure MgB2 sample.
Polycrystalline MgB2-nDx (x= 0 to 0.1) samples are synthesized by solid-state route with ingredients of Mg, B and n-Diamond. The results from magneto-transport and magnetization of nano-diamond doped MgB2-nDx are reported. Superconducting transition temperature (Tc) is not affected significantly by x up to x = 0.05 and latter decreases slightly for higher x > 0.05. R(T) vs H measurements show higher Tc values under same applied magnetic fields for the nano-diamond added samples, resulting in higher estimated Hc2 values. From the magnetization measurements it was found that irreversibility field value Hirr for the pristine sample is 7.5 Tesla at 4 K and the same is increased to 13.5 Tesla for 3-wt% nD added sample at the same temperature. The Jc(H) plots at all temperatures show that Jc value is lowest at all applied fields for pristine MgB2 and the sample doped with 3-wt% nD gives the best Jc values at all fields. For the pure sample the value of Jc is of the order of 105 A/cm2 at lower fields but it decreases very fast as the magnetic field is applied and becomes negligible above 7 Tesla. The Jc is 40 times higher than pure MgB2 at 10 K at 6 Tesla field in case of 3%nD doped sample and its value is still of the order of 103 A/cm2 at 10 Tesla for the same sample. On the other hand at 20K the 5%nD sample shows the best performance at higher fields. These results are discussed in terms of extrinsic pinning due to dispersed n-Diamond in the host MgB2 matrix along with the intrinsic pinning due to possible substitution of C at Boron site and increased inter-band scattering for highly doped samples resulting in extraordinary performance of the doped system.
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