No Arabic abstract
In a recent Letter, Berciu and Bhatt have presented a mean-field theory of ferromagnetism in III-V semiconductors doped with manganese, starting from an impurity band model. We show that this approach gives an unphysically broad impurity band and is thus not appropriate for (Ga,Mn)As containing 1-5% Mn. We also point out a microscopically unmotivated sign change in the overlap integrals in the Letter. Without this sign change, stable ferromagnetism is not obtained.
We suggest an approach to account for spatial (composition) and thermal fluctuations in disordered magnetic models (e.g. Heisenberg, Ising) with given spatial dependence of magnetic spin-spin interaction. Our approach is based on introduction of fluctuating molecular field (rather than mean field) acting between the spins. The distribution function of the above field is derived self-consistently. In general case this function is not Gaussian, latter asymptotics occurs only at sufficiently large spins (magnetic ions) concentrations $n_i$. Our approach permits to derive the equation for a critical temperature $T_c$ of ferromagnetic phase transition with respect to the above fluctuations. We apply our theory to the analysis of influence of composition fluctuations on $T_c$ in diluted magnetic semiconductors (DMS) with RKKY indirect spin-spin interaction.
We study the ferromagnetism of Ga1-xMnxAs by using a model Hamiltonian, based on an impurity band and the anti-ferromagnetic exchange interaction between the spins of Mn atoms and the charge carriers in the impurity band. Based on the mean field approach we calculate the spontaneous magnetization as a function of temperature and the ferromagnetic transition temperature as a function of the Mn concentration. The random distribution of Mn impurities is taken into account by Matsubara and Toyozawa theory of impurities in semiconductors. We compare our results with experiments and other theoretical findings.
By using very general arguments, we show that the entropy loss conjecture at the glass transition violates the second law of thermodynamics and must be rejected.
Local ultrafast optical excitation of electron-hole pairs in disordered semiconductors provides the possibility to observe experimentally interaction-assisted propagation of correlated quantum particles in a disordered environment. In addition to the interaction driven delocalization known for the conventional single-band TIP-(two-interacting-particles)-problem the semiconductor model has a richer variety of physical parameters that give rise to new features in the temporal dynamics. These include different masses, correlated vs. anticorrelated disorder for the two particles, and dependence on spectral position of excitation pulse.
We consider the two-dimensional randomly site diluted Ising model and the random-bond +-J Ising model (also called Edwards-Anderson model), and study their critical behavior at the paramagnetic-ferromagnetic transition. The critical behavior of thermodynamic quantities can be derived from a set of renormalization-group equations, in which disorder is a marginally irrelevant perturbation at the two-dimensional Ising fixed point. We discuss their solutions, focusing in particular on the universality of the logarithmic corrections arising from the presence of disorder. Then, we present a finite-size scaling analysis of high-statistics Monte Carlo simulations. The numerical results confirm the renormalization-group predictions, and in particular the universality of the logarithmic corrections to the Ising behavior due to quenched dilution.