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Register a new userMillisecond Electron-Phonon Relaxation in Ultrathin Disordered Metal Films at Millikelvin Temperatures
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We have measured directly the thermal conductance between electrons and phonons in ultra-thin Hf and Ti films at millikelvin temperatures. The experimental data indicate that electron-phonon coupling in these films is significantly suppressed by disorder. The electron cooling time $tau_epsilon$ follows the $T^{-4}$-dependence with a record-long value $tau_epsilon=25ms$ at $T=0.04K$. The hot-electron detectors of far-infrared radiation, fabricated from such films, are expected to have a very high sensitivity. The noise equivalent power of a detector with the area $1mum^2$ would be $(2-3)10^{-20}W/Hz^{1/2}$, which is two orders of magnitude smaller than that of the state-of-the-art bolometers.
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We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range $3.5-16.0times 10^{25}$ m$^{-3}$ are performed at sub-1 K temperatures. We find a good agreement between the theory and the experiment.
We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphenes sheet conductance as in-situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the $T^4$ dependence characteristic for clean two-dimensional conductor. Based on our measurement we predict the noise-equivalent power of $sim 10^{-22}~{rm W}/sqrt{{rm Hz}}$ of epigraphene bolometer at the low end of achievable temperatures.
We present experimental data and a theoretical interpretation on the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b approximately 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L_phi < b in the range of sheet resistances considered, so that the effective dimension is d = 3. The observed approximate fractional temperature power law of the conductivity is ascribed to the scaling regime near the transition. The conductivity data as a function of temperature and disorder strength collapse on to two scaling curves for the metallic and insulating regimes. The best fit is obtained for a dynamical exponent z approximately 2.5 and a correlation length critical exponent u approximately 1.4 on the metallic side and a localization length exponent u approximately 0.8 on the insulating side.
We examine the nature of the transitions between the normal and the superconducting branches of superconductor-graphene-superconductor Josephson junctions. We attribute the hysteresis between the switching (superconducting to normal) and retrapping (normal to superconducting) transitions to electron overheating. In particular, we demonstrate that the retrapping current corresponds to the critical current at an elevated temperature, where the heating is caused by the retrapping current itself. The superconducting gap in the leads suppresses the hot electron outflow, allowing us to further study electron thermalization by phonons at low temperatures ($T lesssim 1$K). The relationship between the applied power and the electron temperature was found to be $Ppropto T^3$, which we argue is consistent with cooling due to electron-phonon interactions.
We consider electron-phonon (textit{e-ph}) energy loss rate in 3D and 2D multi-component electron systems in semiconductors. We allow general asymmetry in the textit{e-ph} coupling constants (matrix elements), i.e., we allow that the coupling depends on the electron sub-system index. We derive a multi-component textit{e-ph}power loss formula, which takes into account the asymmetric coupling and links the total textit{e-ph} energy loss rate to the density response matrix of the total electron system. We write the density response matrix within mean field approximation, which leads to coexistence of symmetric energy loss rate $F_{S}(T)$ and asymmetric energy loss rate $F_{A}(T)$ with total energy loss rate $ F(T)=F_{S}(T)+F_{A}(T)$ at temperature $T$. The symmetric component F_{S}(T) $ is equivalent to the conventional single-sub-system energy loss rate in the literature, and in the Bloch-Gr{u}neisen limit we reproduce a set of well-known power laws $F_{S}(T)propto T^{n_{S}}$, where the prefactor and power $n_{S}$ depend on electron system dimensionality and electron mean free path. For $F_{A}(T)$ we produce a new set of power laws F_{A}(T)propto T^{n_{A}}$. Screening strongly reduces the symmetric coupling, but the asymmetric coupling is unscreened, provided that the inter-sub-system Coulomb interactions are strong. The lack of screening enhances $F_{A}(T)$ and the total energy loss rate $F(T)$. Especially, in the strong screening limit we find $F_{A}(T)gg F_{S}(T)$. A canonical example of strongly asymmetric textit{e-ph} matrix elements is the deformation potential coupling in many-valley semiconductors.
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