No Arabic abstract
Deposition/removal of metal atoms on the hex reconstructed (100) surface of Au, Pt and Ir should present intriguing aspects, since a new island implies hex -> square deconstruction of the substrate, and a new crater the square -> hex reconstruction of the uncovered layer. To obtain a microscopic understanding of how islands/craters form in these conditions, we have conducted simulations of island and crater growth on Au(100), whose atomistic behavior, including the hex reconstruction on top of the square substrate, is well described by mean s of classical many-body forces. By increasing/decreasing the Au coverage on Au(100), we find that island/craters will not grow unless they exceed a critical size of about 8-10 atoms. This value is close to that which explains the nonlinear coverage dependence observed in molecular adsorption on the closely related surface Pt (100). This threshold size is rationalized in terms of a transverse step correlation length, measuring the spatial extent where reconstruction of a given plane is disturbed by the nearby step.
We report scanning tunneling microscopy observations, which imply that all atoms in a close-packed copper surface move frequently, even at room temperature. Using a low density of embedded indium `tracer atoms, we visualize the diffusive motion of surface atoms. Surprisingly, the indium atoms seem to make concerted, long jumps. Responsible for this motion is an ultra-low density of surface vacancies, diffusing rapidly within the surface. This interpretation is supported by a detailed analysis of the displacement distribution of the indium atoms, which reveals a shape characteristic for the vacancy mediated diffusion mechanism that we propose.
We investigate the surface- and bulk-like properties of the pristine (110)-surface of silver using threshold photoemission by excitation with light of 5.9 eV. Using a momentum microscope, we identified two distinct transitions along the $overline{Gamma},overline{textrm{Y}}$-direction of the crystal. The first one is a so far unknown surface resonance for the (110) noble metal surface, exhibiting an exceptionally large bulk character, that has so far been elusive in surface sensitive experiments. The second one stems from the well known bulk-like Mahan cone oriented along the $Gamma L$-direction inside the crystal but projected onto the (110)-surface cut. The existence of the new state is confirmed by photocurrent calculations and its character analyzed.
This paper has been withdrawn by first author KM Seemann.
The geometrical and electronic structure properties of $<100>$ and $<110>$ silicon nanowires in the absence of surface passivation are studied by means of density-functional calculations. As we have shown in a recent publication [R. Rurali and N. Lorente, Phys. Rev. Lett. {bf 94}, 026805 (2005)] the reconstruction of facets can give rise to surface metallic states. In this work, we analyze the dependence of geometric and electronic structure features on the size of the wire and on the growth direction.
We study solid surface morphology created by off-normal ion-beam sputtering with an atomistic, solid-on-solid model of sputter erosion. With respect to an earlier version of the model, we extend this model with the inclusion of lateral erosion. Using the 2-dimensional structure factor, we found an upper bound $musimeq 2$, in the lateral straggle $mu$, for clear ripple formation. Above this upper bound, for longitudinal straggle $sigmagtrsim 1.7$, we found the possibility of dot formation (without sample rotation). Moreover, a temporal crossover from a hole topography to ripple topography with the same value of collision cascade parameters was found. Finally, a scaling analysis of the roughness, using the consecutive gradient approach, yields the growth exponents $beta=0.33$ and 0.67 for two different topographic regimes.