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Register a new userSize effects in surface reconstructed $<100>$ and $< 110>$ silicon nanowires
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The geometrical and electronic structure properties of $<100>$ and $<110>$ silicon nanowires in the absence of surface passivation are studied by means of density-functional calculations. As we have shown in a recent publication [R. Rurali and N. Lorente, Phys. Rev. Lett. {bf 94}, 026805 (2005)] the reconstruction of facets can give rise to surface metallic states. In this work, we analyze the dependence of geometric and electronic structure features on the size of the wire and on the growth direction.
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We study by means of density-functional calculations the role of lateral surface reconstructions in determining the electrical properties of <100> silicon nanowires. The different lateral reconstructions are explored by relaxing all the nanowires with crystalline bulk silicon structure and all possible ideal facets that correspond to an average diameter of 1.5 nm. We show that the reconstruction induces the formation of ubiquitous surface states that turn the wires into semi-metallic or metallic.
The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces. Importantly, this time varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.
The low temperature surface resistance R_s of d-wave superconductors is calculated as function of frequency assuming normal state quasiparticle mean free paths l in excess of the penetration depth. Results depend strongly on the geometric configuration. In the clean limit, two contributions to R_s with different temperature dependencies are identified: photon absorption by quasiparticles and pair breaking. The size of nonlocal corrections, which can be positive or negative depending on frequency decreases for given l as the scattering phase shift delta_N is increased. However, except in the unitarity limit delta_N = 0.5 pi, nonlocal effects should be observable.
Atomic nanowires on semiconductor surfaces induced by the adsorption of metallic atoms have attracted a lot of attention as possible hosts of the elusive, Tomonaga-Luttinger liquid. The Au/Ge(100) system in particular is the subject of controversy as to whether the Au-induced nanowires do indeed host exotic, 1D metallic states. We report on a thorough study of the electronic properties of high quality nanowires formed at the Au/Ge(100) surface. High resolution ARPES data show the low-lying Au-induced electronic states to possess a dispersion relation that depends on two orthogonal directions in k-space. Comparison of the E(k$_x$,k$_y$) surface measured using ARPES to tight-binding calculations yields hopping parameters in the two different directions that differ by a factor of two. We find that the larger of the two hopping parameters corresponds, in fact, to the direction perpendicular to the nanowires (t$_{perp}$). This, the topology of the $E$=$E_F$ contour in k$_{||}$, and the fact that $t_{||}$/$t_{perp}sim 0.5$ proves that the Au-induced electron pockets possess a 2D, closed Fermi surface, this firmly places the Au/Ge(100) nanowire system outside being a potential hosts of a Tomonaga-Luttinger liquid. We combine these ARPES data with STS measurements of the spatially-resolved electronic structure and find that the spatially straight conduction channels observed up to energies of order one electron volt below the Fermi level do not originate from the Au-induced states seen in the ARPES data. The former are more likely to be associated with bulk Ge states that are localized to the subsurface region. Despite our proof of the 2D nature of the Au-induced nanowire and sub-surface Ge-related states, an anomalous suppression of the density of states at the Fermi level is observed in both the STS and ARPES data, this phenomenon is discussed in the light of the effects of disorder.
Deposition/removal of metal atoms on the hex reconstructed (100) surface of Au, Pt and Ir should present intriguing aspects, since a new island implies hex -> square deconstruction of the substrate, and a new crater the square -> hex reconstruction of the uncovered layer. To obtain a microscopic understanding of how islands/craters form in these conditions, we have conducted simulations of island and crater growth on Au(100), whose atomistic behavior, including the hex reconstruction on top of the square substrate, is well described by mean s of classical many-body forces. By increasing/decreasing the Au coverage on Au(100), we find that island/craters will not grow unless they exceed a critical size of about 8-10 atoms. This value is close to that which explains the nonlinear coverage dependence observed in molecular adsorption on the closely related surface Pt (100). This threshold size is rationalized in terms of a transverse step correlation length, measuring the spatial extent where reconstruction of a given plane is disturbed by the nearby step.
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