No Arabic abstract
Recent transport experiments have established that two-dimensional electron systems with high-index partial Landau level filling, $ u^{*} = u - lbrack u rbrack$, have ground states with broken orientational symmetry. In a mean-field theory, the broken symmetry state consists of electron stripes with local filling factor $lbrack u rbrack + 1 $, separated by hole stripes with filling factor $lbrack u rbrack$. We have recently developed a theory of these states in which the electron stripes are treated as one-dimensional electron systems coupled by interactions and described by using a Luttinger liquid model. Among other things, this theory predicts non-linearities of opposite sign in easy and hard direction resistivities. In this article we briefly review our theory, focusing on its predictions for the dependence of non-linear transport exponents on the separation $d$ between the two-dimensional electron system and a co-planar screening layer.
We study the effect of disorder on quantum Hall smectics within the framework of an elastic theory. Based on a renormalization group calculation, we derive detailed results for the degrees of translational and orientational order of the stripe pattern at zero temperature and carefully map out the disorder and length-scale regimes in which the system effectively exhibits smectic, nematic, or isotropic behavior. We show that disorder always leads to a finite density of free dislocations and estimate the scale on which they begin to appear.
We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regime the voltage of floating electrode always increases as a function of push-pull polarization. Such anomalous effect occurs for the symmetric device, provided the applied voltage is less than the Fermi energy in equilibrium.
Topological edge states exhibit dissipationless transport and electrically-driven topological phase transitions, making them ideal for next-generation transistors that are not constrained by Moores law. Nevertheless, their dispersion has never been probed and is often assumed to be simply linear, without any rigorous justification. Here we determine the non-linear electrical response of topological edge states in the ballistic regime and demonstrate the way this response ascertains the presence of symmetry breaking terms in the edge dispersion, such as deviations from non-linearity and tilted spin quantization axes. The non-linear response stems from discontinuities in the band occupation on either side of a Zeeman gap, and its direction is set by the spin orientation with respect to the Zeeman field. We determine the edge dispersion for several classes of topological materials and discuss experimental measurement.
We report on the experimental observation of the non-linear analogue of the optical spin Hall effect under highly non-resonant circularly polarized excitation of an exciton polariton condensate in a GaAs/AlGaAs microcavity. Initially circularly polarized polariton condensates propagate over macroscopic distances while the collective condensate spins coherently precess around an effective magnetic field in the sample plane performing up to four complete revolutions.
We study the effect of backward scatterings in the tunneling at a point contact between the edges of a second level hierarchical fractional quantum Hall states. A universal scaling dimension of the tunneling conductance is obtained only when both of the edge channels propagate in the same direction. It is shown that the quasiparticle tunneling picture and the electron tunneling picture give different scaling behaviors of the conductances, which indicates the existence of a crossover between the two pictures. When the direction of two edge-channels are opposite, e.g. in the case of MacDonalds edge construction for the $ u=2/3$ state, the phase diagram is divided into two domains giving different temperature dependence of the conductance.