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Register a new userHighly anisotropic organometal halide perovskite nanowalls grown by Glancing Angle Deposition
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Added by
Juan Ramon Sanchez Valencia
Publication date
2021
fields
Physics
and research's language is
English
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Polarizers are ubiquitous components in optoelectronic devices of daily use as displays, optical sensors or photographic cameras, among others. Yet the control over light polarization is an unresolved challenge as the main drawback of the current display technologies relays in significant optical losses. In such a context, organometal halide perovskites can play a decisive role given their flexible synthesis with under design optical properties . Therefore, along with their outstanding electrical properties have elevated hybrid perovskites as the material of choice in photovoltaics and optoelectronics. Among the different organometal halide perovskite nanostructures, nanowires and nanorods have lately arise as key players for the control of light polarization for lighting or detector applications. Herein, we will present the unprecedented fabrication of highly aligned and anisotropic methylammonium lead iodide (MAPI) perovskite nanowalls by Glancing Angle Deposition of PbI2 under high vacuum followed by CH3NH3I deposition at normal angle. Our approach offers a direct route for the fabrication of perovskite nanostructures virtually on any substrate, including on photovoltaic devices. The unparalleled alignment degree of the perovskite nanowalls provides the samples with strong anisotropic optical properties such as light absorption and photoluminescence, the latter with a maximum polarization ratio of P=0.43. Furthermore, the implementation of the MAPI nanowalls in photovoltaic devices provides them with a polarization-sensitive response, with a maximum photocurrent difference of 2.1 % when illuminating with the near-infrared range of the solar spectrum (>700 nm). Our facile vacuum-based approach embodies a milestone in the development of last generation polarization-sensitive perovskite-based optoelectronic devices such as lighting appliances or self-powered photodetectors.
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Organometal trihalide perovskite solar cells have been rapidly developed and attracted much attention in recent years due to their high photoelectric conversion efficiency and low cost. Pulsed laser deposition (PLD) is a widely adopted technology which is used in the preparation of thin films, especially oxide thin films. With this technology, the thickness and composition of films can be conveniently and accurately controlled. In the structure of perovskite solar cells, TiO$_2$ layer working as the n-type semiconductor is used to block holes and transport electrons into electrode, which is crucial for the performance of whole devices. We introduced the PLD technique into preparation of TiO$_2$ layer. In comparison with common spin coating method, TiO$_2$ layer prepared by this technique is ultrathin and more compact. Compact TiO$_2$ (c-TiO$_2$) layers with optimized thickness of 32 nm have been prepared by the PLD method and the highest efficiency of 13.95 % for the MAPbI$_3$-based solar cell devices has been achieved.
We study the circular photogalvanic effect in the organometal halide perovskite solar cell absorber CH$_3$NH$_3$PbI$_3$. For crystal structures which lack inversion symmetry, the calculated photocurrent density is about $10^{-9}$ A/W, comparable to the previously studied quantum well and bulk Rashba systems. Because of the dependence of the circular photogalvanic effect on inversion symmetry breaking, the degree of inversion asymmetry at different depths from the surface can be probed by tuning the photon energy and associated penetration depth. We propose that measurements of this effect may clarify the presence or absence of inversion symmetry, which remains a controversial issue and has been argued to play an important role in the high conversion efficiency of this material.
We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic to ambient temperatures. We determine a defect concentration of the order of 10$^{13}$ cm$^{-2}$ for our samples with HRTEM. To have access to the intrinsic optical quality of the MLs, we remove the MLs from the SiO$_2$ growth substrate and encapsulate them in hBN flakes with low defect density, to reduce the detrimental impact of dielectric disorder. We show optical transition linewidth of 5 meV at low temperature (T=4 K) for the free excitons in emission and absorption. This is comparable to the best ML samples obtained by mechanical exfoliation of bulk material. The CVD grown MoS$_2$ ML photoluminescence is dominated by free excitons and not defects even at low temperature. High optical quality of the samples is further confirmed by the observation of excited exciton states of the Rydberg series. We optically generate valley coherence and valley polarization in our CVD grown MoS$_2$ layers, showing the possibility for studying spin and valley physics in CVD samples of large surface area.
Meta-optics based on optically-resonant dielectric nanostructures is a rapidly developing research field with many potential applications. Halide perovskite metasurfaces emerged recently as a novel platform for meta-optics, and they offer unique opportunities for control of light in optoelectronic devices. Here we employ the generalized Kerker conditions to overlap electric and magnetic Mie resonances in each meta-atom of MAPbBr3 perovskite metasurface and demonstrate broadband suppression of reflection down to 4%. We reveal also that metasurface nanostructuring is also beneficial for the enhancement of photoluminescence. Our results may be useful for applications of nanostructured halide perovskites in photovoltaics and semi-transparent multifunctional metadevices where reflection reduction is important for their high efficiency.
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