No Arabic abstract
The surface charge associated with the spontaneous polarization in ferroelectrics is well known to cause a depolarizing field that can be particularly detrimental in the thin-film geometry desirable for microelectronic devices. Incomplete screening of the surface charge, for example by metallic electrodes or surface adsorbates, can lead to the formation of domains, suppression or reorientation of the polarization, or even stabilization of a higher energy non-polar phase . A huge amount of research and development effort has been invested in understanding the depolarizing behavior and minimizing its unfavorable effects. Here we demonstrate the opposite behavior: A strong polarizing field that drives thin films of materials that are centrosymmetric and paraelectric in their bulk form into a non-centrosymmetric, polar state. We illustrate the behavior using density functional computations for perovskite-structure potassium tantalate, KTaO$_3$, which is of considerable interest for its high dielectric constant, proximity to a quantum critical point and superconductivity. We then provide a simple recipe to identify whether a particular material and film orientation will exhibit the effect, and develop an electrostatic model to estimate the critical thickness of the induced polarization in terms of well-known material parameters. Our results provide practical guidelines for exploiting the electrostatic properties of thin-film ionic insulators to engineer novel functionalities for nanoscale devices.
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is shown that the ME response strongly depends on the initial strain state of the film. The ME polarization coefficient of the heterostructures involving Terfenol-D substrates and compressively strained lead zirconate titanate (PZT) films, which stabilize in the out-of-plane polarization state, is found to be comparable to that of bulk PZT/Terfenol-D laminate composites. At the same time, the ME voltage coefficient reaches a giant value of 50 V/(cm Oe), which greatly exceeds the maximum observed static ME coefficients of bulk composites. This remarkable feature is explained by a favorable combination of considerable strain sensitivity of polarization and a low electric permittivity in compressively strained PZT films. The theory also predicts a further dramatic increase of ME coefficients at the strain-induced transitions between different ferroelectric phases.
The first epitaxial ferroelectric wurtzite film with clear polarization-electric field hysteresis behavior is presented. The coercive field of this epitaxial Al0.7Sc0.3N film on W/c-sapphire substrate is 0.4 +- 0.3 MV cm-1 (8 %) smaller than that of a conventional fiber textured film on a Pt/TiOx/SiO2/Si substrate, attributed to the 0.01 +- 0.007 {AA} smaller c-axis lattice parameter in the epitaxial film. The strain and decrease of the coercive field most likely originate from epitaxial strain rather than the mismatch in thermal coefficient of expansion. These results provide an insight for further coercive field reduction of novel wurtzite ferroelectrics using epitaxial mismatch strain.
We have studied electric-field-induced symmetry lowering in the tetragonal (001)-oriented heteroepitaxial (Ba$_{0.8}$Sr$_{0.2}$)TiO$_3$ thin film deposited on (001)MgO substrate. Polarized micro-Raman spectra were recorded from the film area in between two planar electrodes deposited on the film surface. Presence of textit{c}-domains with polarization normal to the substrate was confirmed from polarized Raman study under zero field, while splitting and hardening of the textit{E}(TO) soft mode and polarization changes in the Raman spectra suggest monoclinic symmetry under external electric field.
Thermal stability of nanocrystalline multilayer thin film is of paramount importance as the applications often involve high temperature. Here we report on the layer instability phenomenon in binary polycrystalline thin film initiating from the grain boundary migrations at higher temperatures using phase-field simulations. Effect of layer thickness, bilayer spacing and the absence of grain boundary are also investigated along with the grain boundary mobility of individual phases on the layer stability. Layer instability in the polycrystalline film is shown to arise from the grain boundary grooving which originates spontaneously from the presence of grain boundaries. Our results show that the growth of the perturbation generated from the differential curvature follows Plateau-Rayleigh instability criterion. Increase in layer thickness, lower bilayer thickness as well as lower grain boundary mobility improve layer stability. Phase-field simulations show similar microstructural evolution as has been observed in our Zirconium (Zr)/Zirconium Nitride (ZrN) system experimentally. Detail analysis performed in this work to understand the mechanisms of layer instability leads us to predict measures which will improve the thermal stability of multilayer nanocrystalline thin film.
Despite the huge importance of friction in regulating movement in all natural and technological processes, the mechanisms underlying dissipation at a sliding contact are still a matter of debate. Attempts to explain the dependence of measured frictional losses at nanoscale contacts on the electronic degrees of freedom of the surrounding materials have so far been controversial. Here, it is proposed that friction can be explained by considering damping of stick-slip pulses in a sliding contact. Based on friction force microscopy studies of La$_{(1-x)}$Sr$_x$MnO$_3$ films at the ferromagnetic-metallic to paramagnetic-polaronic conductor phase transition, it is confirmed that the sliding contact generates thermally-activated slip pulses in the nanoscale contact, and argued that these are damped by direct coupling into phonon bath. Electron-phonon coupling leads to the formation of Jahn-Teller polarons and a clear increase in friction in the high temperature phase. There is no evidence for direct electronic drag on the atomic force microscope tip nor any indication of contributions from electrostatic forces. This intuitive scenario, that friction is governed by the damping of surface vibrational excitations, provides a basis for reconciling controversies in literature studies as well as suggesting possible tactics for controlling friction.