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Register a new userElectric-field-induced monoclinic phase in (Ba,Sr)TiO$_3$ thin film
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We have studied electric-field-induced symmetry lowering in the tetragonal (001)-oriented heteroepitaxial (Ba$_{0.8}$Sr$_{0.2}$)TiO$_3$ thin film deposited on (001)MgO substrate. Polarized micro-Raman spectra were recorded from the film area in between two planar electrodes deposited on the film surface. Presence of textit{c}-domains with polarization normal to the substrate was confirmed from polarized Raman study under zero field, while splitting and hardening of the textit{E}(TO) soft mode and polarization changes in the Raman spectra suggest monoclinic symmetry under external electric field.
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An emerging area in condensed matter physics is the use of multilayered heterostructures to enhance ferroelectricity in complex oxides. Here, we demonstrate that optically pumping carriers across the interface between thin films of a ferroelectric (FE) insulator and a ferromagnetic metal can significantly enhance the FE polarization. The photoinduced FE state remains stable at low temperatures for over one day. This occurs through screening of the internal electric field by the photoexcited carriers, leading to a larger, more stable polarization state that may be suitable for applications in areas such as data and energy storage.
The crystal structure of BiFeO3/BaxSr1-xTiO3 (BFO/BST) heterostructures with x = 0.2, 0.6 and 0.8, grown on single-crystal MgO (001) substrate was investigated by x-ray diffraction and Raman spectroscopy in order to determine the influence of mismatch-induced strains and spontaneous polarization in BST buffer layers on BFO layers. The lattice parameter of the BFO layers was shown to decrease with increasing concentration of Ba ions, despite the increasing in-plain lattice parameters of tetragonal unit cells of BST layers. The rhombohedral angle of the crystal structure of BFO layers demonstrates an increase towards the ideal cubic perovskite structure with the appearance of the built-in electric field, induced by the spontaneous polarization in buffer layers. This result provides a remarkable tool for the control of polarization in BFO layers and other ferroelectric films in general, by changing the built-in electric field from ferroelectric buffer layer without changing a single crystal substrate.
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