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Register a new userA Photonics-based superheterodyne RF reception approach
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A novel photonics-based RF reception approach is proposed as a competitive solution to meet the current challenges of photonic-based approaches and to realize high performances at the same time. The proposed approach adopts the superheterodyne configuration by a combination manner of electronic techniques and photonic techniques, including the ultrawideband generation of optical LO, the two-stage photonic superheterodyne frequency conversion and the real-time IF compensation. An engineering prototype has been developed and its performance has been evaluated in the laboratory environment. The experiment results preliminarily verify the feasibility of the proposed approach and its engineering potential. The typical performances are as follows: 0.1 GHz~ 45GHz operation spectrum range (>40 GHz), 900 MHz instantaneous bandwidth, 101 dBHz2/3 SFDR and 130 dBHz LDR, image rejections of ~80 dB for 1st frequency conversion and >90 dB for 2nd frequency conversion.
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Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact formfactors that are seamlessly integratable with Silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously integrated with Si photonics open a new avenue for device engineering. Indium tin oxide (ITO) is one such compelling material for heterogeneous integration in Si exhibiting formidable electro-optic effect characterized by unity order index at telecommunication frequencies. Here we overcome these limitations and demonstrate a monolithically integrated ITO electro- optic modulator based on a Mach Zehnder interferometer (MZI) featuring a high-performance half-wave voltage and active device length product, VpL = 0.52 V-mm. We show, how that the unity-strong index change enables a 30 micrometer-short pi-phase shifter operating ITO in the index-dominated region away from the epsilon-bear-zero ENZ point. This device experimentally confirms electrical phase shifting in ITO enabling its use in multifaceted applications including dense on-chip communication networks, nonlinearity for activation functions in photonic neural networks, and phased array applications for LiDAR.
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fully PIC-compatible integration of BTO-based devices and is, as shown, scalable to 200 mm wafers. The PIC-integrated BTO Mach-Zehnder modulators outperform conventional Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices show excellent V{pi}L (0.2 Vcm) and V{pi}L{alpha} (1.3 VdB), work at high speed (25 Gbps), and can be tuned at low static power consumption (100 nW). Our concept demonstrates the possibility of monolithic integration of Pockels-based electro-optic modulators in advanced silicon photonic platforms. {c} 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. https://www.osapublishing.org/jlt/abstract.cfm?URI=jlt-37-5-1456 Publication date: March 1, 2019 This work was supported in part by the European Union (EU) under Horizon 2020 grant agreements no. H2020-ICT-2015-25-688579 (PHRESCO) and H2020-ICT-2017-1-780997 (plaCMOS).
By harnessing quantum superposition and entanglement, remarkable progress has sprouted over the past three decades from different areas of research in communication computation and simulation. To further improve the processing ability of microwave pho-tonics, here, we have demonstrated a quantum microwave photonic processing system using a low jitter superconducting nanowire single photon detector (SNSPD) and a time-correlated single-photon counting (TCSPC) module. This method uniquely combines extreme optical sensitivity, down to a single-photon level (below -100 dBm), and wide processing bandwidth, twice higher than the transmission bandwidth of the cable. Moreover, benefitted from the trigger, the system can selectively process the desired RF signal and attenuates the other in-tense noise and undesired RF components even the power is 15dB greater than the desired signal power. Using this method we show microwave phase shifting and frequency filtering for the desired RF signal on the single-photon level. Besides its applications in space and under-water communications and testing and qualification of pre-packaged photonic modulators and detectors. This RF signal processing capability at the single-photon level can lead to significant development in the high-speed quantum processing method.
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $chi^{(2)}$ and $chi^{(3)}$ coefficients, a high refractive index ($>3$), and transparency from visible to long-infrared wavelengths ($0.55-11,mu$m)---its application as an integrated photonics material has been little studied. Here we introduce GaP-on-insulator as a platform for nonlinear photonics, exploiting a direct wafer bonding approach to realize integrated waveguides with 1.2 dB/cm loss in the telecommunications C-band (on par with Si-on-insulator). High quality $(Q> 10^5)$, grating-coupled ring resonators are fabricated and studied. Employing a modulation transfer approach, we obtain a direct experimental estimate of the nonlinear index of GaP at telecommunication wavelengths: $n_2=1.2(5)times 10^{-17},text{m}^2/text{W}$. We also observe Kerr frequency comb generation in resonators with engineered dispersion. Parametric threshold powers as low as 3 mW are realized, followed by broadband ($>100$ nm) frequency combs with sub-THz spacing, frequency-doubled combs and, in a separate device, efficient Raman lasing. These results signal the emergence of GaP-on-insulator as a novel platform for integrated nonlinear photonics.
Open Fabry-Perot microcavities represent a promising route for achieving a quantum electrodynamics (cavity-QED) platform with diamond-based emitters. In particular, they offer the opportunity to introduce high purity, minimally fabricated material into a tunable, high quality factor optical resonator. Here, we demonstrate a fiber-based microcavity incorporating a thick (> 10 {mu}m) diamond membrane with a finesse of 17,000, corresponding to a quality factor Q ~ $10^6$. Such minimally fabricated, thick samples can contain optically stable emitters similar to those found in bulk diamond. We observe modified microcavity spectra in the presence of the membrane, and develop analytic and numerical models to describe the effect of the membrane on cavity modes, including loss and coupling to higher-order transverse modes. We estimate that a Purcell enhancement of approximately 20 should be possible for emitters within the diamond in this device, and provide evidence that better diamond surface treatments and mirror coatings could increase this value to 200 in a realistic system.
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