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Register a new userOptical Rashba effect in a monolithic light-emitting perovskite metasurface
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The Rashba effect, i.e., the splitting of electronic spin-polarized bands in the momentum space of a crystal with broken inversion symmetry, has enabled the realization of spin-orbitronic devices, in which spins are manipulated by spin-orbit coupling. In optics, where the helicity of light polarization represents the spin degree of freedom for spin-momentum coupling, the optical Rashba effect is manifested by the splitting of optical states with opposite chirality in the momentum space. Previous realizations of the optical Rashba effect relied on passive devices determining either the propagation direction of surface plasmons or circularly polarized light into nanostructures, or the directional emission of polarized luminescence from metamaterials hybridized with light-emitting media. Here we demonstrate an active device underpinned by the optical Rashba effect, in which a monolithic halide perovskite metasurface emits highly directional chiral photoluminescence. An all-dielectric metasurface design with broken in-plane inversion symmetry is directly embossed into the high refractive index, light-emitting perovskite film, yielding a degree of circular polarization of photoluminescence of 40% at room temperature - more than one order of magnitude greater than in state of art chiral perovskites.
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A special class of anisotropic media, hyperbolic metamaterials and metasurfaces (HMMs), has attracted much attention in recent years due to its unique abilities to manipulate and engineer electromagnetic waves on the subwavelength scale. Because all HMM designs require metal dielectric composites, the unavoidable metal loss at optical frequencies inspired the development of active HMMs, where gain materials is incorporated to compensate the metal loss. Here, we experimentally demonstrate an active type II HMM that operates at vacuum wavelength near 750 nm on a silicon platform. Different from previous active HMMs operating below 1 {mu}m, the dielectric constituent in our HMM is solely composed of gain medium, by utilizing solution processed and widely tunable metal halide perovskite gain. Thanks to the facile fabrication, tunability and silicon compatibility of our active HMM, this work paves the way towards HMMs integration into on chip components, and eventually, into photonic integrated circuits.
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures.
A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3*10^4) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.
Spatial light modulators (SLMs) are devices for modulating amplitude, phase or polarization of a light beam on demand. Such devices have been playing an indispensable inuence in many areas from our daily entertainments to scientific researches. In the past decades, the SLMs have been mainly operated in electrical addressing (EASLM) manner, wherein the writing images are created and loaded via conventional electronic interfaces. However, adoption of pixelated electrodes puts limits on both resolution and efficiency of the EASLMs. Here, we present an optically addressed SLM based on a nonlinear metasurface (MS-OASLM), by which signal light is directly modulated by another writing beam requiring no electrode. The MS-OASLM shows unprecedented compactness and is 400 nm in total thickness benefitting from the outstanding nonlinearity of the metasurface. And their subwavelength feature size enables a high resolution up to 250 line pairs per millimeter, which is more than one order of magnitude better than any currently commercial SLMs. Such MS-OASLMs could provide opportunities to develop the next generation of high resolution displays and all-optical information processing technologies.
Light projection displays play an increasingly important role in our modern life. Core projection systems including liquid crystal displays and digital micromirror devices can impose spatial light modulation and actively shape light waves. Recently, the advent of metasurfaces has revolutionized design concepts in nanophotonics, enabling a new family of optical elements with exceptional degrees of freedom. Here, we demonstrate a light projection display technology based on optical metasurfaces, called digital metasurface device (DMSD). Each metasurface pixel in a DMSD is electrically reconfigurable with well-controlled programmability and addressability. The DMSD can not only continuously modulate the intensity of light with high contrast, but also shape the wavefront of light generated by each metasurface pixel and dynamically switch between arbitrary holographic patterns. Our approach will pave an avenue towards the development of customized light projection devices. It will also drive the field of dynamic optical metasurfaces with fresh momentum and inspiring concepts.
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