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Register a new userLight-driven topological and magnetic phase transitions in thin-layer antiferromagnets
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Added by
Martin Rodriguez-Vega
Publication date
2021
fields
Physics
and research's language is
English
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We theoretically study the effect of low-frequency light pulses in resonance with phonons in the topological and magnetically ordered two septuple-layer (2-SL) MnBi2Te4 (MBT) and MnSb2Te4 (MST). These materials share symmetry properties and an antiferromagnetic ground state in pristine form but present different magnetic exchange interactions. In both materials, shear and breathing Raman phonons can be excited via non-linear interactions with photo-excited infrared phonons using intense laser pulses attainable in current experimental setups. The light-induced transient lattice distortions lead to a change in the sign of the effective interlayer exchange interaction and magnetic order accompanied by a topological band transition. Furthermore, we show that moderate anti-site disorder, typically present in MBT and MST samples, can facilitate such an effect. Therefore, our work establishes 2-SL MBT and MST as candidate platforms to achieve non-equilibrium magneto-topological phase transitions.
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The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable dissipationless chiral edge conduction at zero magnetic field, effective exchange field arisen from the aligned magnetic dopants needs to be large enough to yield specific spin sub-band configurations. Here we report the thickness-tailored quantum anomalous Hall (QAH) effect in Cr-doped (Bi,Sb)2Te3 thin films by tuning the system across the two-dimensional (2D) limit. In addition to the Chern number-related metal-to-insulator QAH phase transition, we also demonstrate that the induced hybridization gap plays an indispensable role in determining the ground magnetic state of the MTIs, namely the spontaneous magnetization owning to considerable Van Vleck spin susceptibility guarantees the zero-field QAH state with unitary scaling law in thick samples, while the quantization of the Hall conductance can only be achieved with the assistance of external magnetic fields in ultra-thin films. The modulation of topology and magnetism through structural engineering may provide a useful guidance for the pursuit of QAH-based new phase diagrams and functionalities.
We study disorder induced topological phase transitions in magnetically doped (Bi, Sb)$_2$Te$_3$ thin films, by using large scale transport simulations of the conductance through a disordered region coupled to reservoirs in the quantum spin Hall regime. Besides the disorder strength, the rich phase diagram also strongly depends on the magnetic exchange field, the Fermi level, and the initial topological state in the undoped and clean limit of the films. In an initially trivial system at non-zero exchange field, varying the disorder strength can induce a sequence of transitions from a normal insulating, to a quantum anomalous Hall, then a spin-Chern insulating, and finally an Anderson insulating state. While for a system with topology initially, a similar sequence, but only starting from the quantum anomalous Hall state, can be induced. Varying the Fermi level we find a similarly rich phase diagram, including transitions from the quantum anomalous Hall to the spin-Chern insulating state via a state that behaves as a mixture of a quantum anomalous Hall and a metallic state, akin to recent experimental reports.
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors.
In this work, the current-induced inertial effects on skyrmions hosted in ferromagnetic systems are studied. {When the dynamics is considered beyond the particle-like description, magnetic skyrmions can deform due to a self-induced field. We perform Monte Carlo simulations to characterize the deformation of the skyrmion during its movement}. In the low-velocity regime, the deformation in the skyrmion shape is quantified by an effective inertial mass, which is related to the dissipative force. When skyrmions move faster, the large self-induced deformation triggers topological transitions. The transition is characterized by the proliferation of skyrmions and different total topological charge, which are obtained in terms of the skyrmion velocity. Our findings provide an alternative way to describe the skyrmion dynamics that take into account the deformations of its structure. Furthermore, the motion-induced topological phase transition brings the possibility to control the number of ferromagnetic skyrmions by velocity effects.
In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects and strain engineering. The realization of QAH states with multiple dissipationless edge and surface conduction channels defined by a Chern number $mathcal{C}geq1$ was foreseen for the ferromagnetically ordered SnTe class of topological crystalline insulators (TCIs). From magnetotransport measurements on Sn$_{1-x}$Mn$_{x}$Te ($0.00leq{x}leq{0.08}$)(111) epitaxial thin films grown by molecular beam epitaxy on BaF$_{2}$ substrates, hole mediated ferromagnetism is observed in samples with $xgeq0.06$ and the highest $T_mathrm{c}sim7.5,mathrm{K}$ is inferred from an anomalous Hall behavior in Sn$_{0.92}$Mn$_{0.08}$Te. The sizable anomalous Hall angle $sim$0.3 obtained for Sn$_{0.92}$Mn$_{0.08}$Te is one of the greatest reported for magnetic topological materials. The ferromagnetic ordering with perpendicular magnetic anisotropy, complemented by the inception of anomalous Hall effect in the Sn$_{1-x}$Mn$_{x}$Te layers for a thickness commensurate with the decay length of the top and bottom surface states, points at Sn$_{1-x}$Mn$_{x}$Te as a preferential platform for the realization of QAH states in ferromagnetic TCIs.
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