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Register a new userMaking high-quality quantum microwave devices with van der Waals superconductors
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Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure of the constituent two-dimensional (2D) layered materials and the lack of dangling bonds at their atomically sharp interfaces. However, new fabrication and characterization techniques are required to determine whether these structures can achieve low loss in the microwave regime. Here we report the fabrication of superconducting microwave resonators using NbSe$_2$ that achieve a quality factor $Q > 10^5$. This value sets an upper bound that corresponds to a resistance of $leq 192 muOmega$ when considering the additional loss introduced by integrating NbSe$_2$ into a standard transmon circuit. This work demonstrates the compatibility of 2D layered materials with high-quality microwave quantum devices.
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We analyse van der Waals interactions between a pair of dielectrically anisotropic plane-layered media interacting across a dielectrically isotropic solvent medium. We develop a general formalism based on transfer matrices to investigate the van der Waals torque and force in the limit of weak birefringence and dielectric matching between the ordinary axes of the anisotropic layers and the solvent. We apply this formalism to study the following systems: (i) a pair of single anisotropic layers, (ii) a single anisotropic layer interacting with a multilayered slab consisting of alternating anisotropic and isotropic layers, and (iii) a pair of multilayered slabs each consisting of alternating anisotropic and isotropic layers, looking at the cases where the optic axes lie parallel and/or perpendicular to the plane of the layers. For the first case, the optic axes of the oppositely facing anisotropic layers of the two interacting slabs generally possess an angular mismatch, and within each multilayered slab the optic axes may either be the same, or undergo constant angular increments across the anisotropic layers. In particular, we examine how the behaviors of the van der Waals torque and force can be tuned by adjusting the layer thicknesses, the relative angular increment within each slab, and the angular mismatch between the slabs.
The atomic-level vdW heterostructures have been one of the most interesting quantum material systems, due to their exotic physical properties. The interlayer coupling in these systems plays a critical role to realize novel physical observation and enrich interface functionality. However, there is still lack of investigation on the tuning of interlayer coupling in a quantitative way. A prospective strategy to tune the interlayer coupling is to change the electronic structure and interlayer distance by high pressure, which is a well-established method to tune the physical properties. Here, we construct a high-quality WS2/MoSe2 heterostructure in a DAC and successfully tuned the interlayer coupling through hydrostatic pressure. Typical photoluminescence spectra of the monolayer MoSe2 (ML-MoSe2), monolayer WS2 (ML-WS2) and WS2/MoSe2 heterostructure have been observed and its intriguing that their photoluminescence peaks shift with respect to applied pressure in a quite different way. The intralayer exciton of ML-MoSe2 and ML-WS2 show blue shift under high pressure with a coefficient of 19.8 meV/GPa and 9.3 meV/GPa, respectively, while their interlayer exciton shows relative weak pressure dependence with a coefficient of 3.4 meV/GPa. Meanwhile, external pressure helps to drive stronger interlayer interaction and results in a higher ratio of interlayer/intralayer exciton intensity, indicating the enhanced interlayer exciton behavior. The first-principles calculation reveals the stronger interlayer interaction which leads to enhanced interlayer exciton behavior in WS2/MoSe2 heterostructure under external pressure and reveals the robust peak of interlayer exciton. This work provides an effective strategy to study the interlayer interaction in vdW heterostructures, which could be of great importance for the material and device design in various similar quantum systems.
We report on fabrication of devices integrating FeTe$_{0.55}$Se$_{0.45}$ with other van-der-Waals materials, measuring transport properties as well as tunneling spectra at variable magnetic fields and temperatures down to 35 mK. Transport measurements are reliable and repeatable, revealing temperature and magnetic field dependence in agreement with prior results, confirming that fabrication processing does not alter bulk properties. However, cross-section scanning transmission microscopy reveals oxidation of the surface, which may explain a lower yield of tunneling device fabrication. We nonetheless observe hard-gap planar tunneling into FeTe$_{0.55}$Se$_{0.45}$ through a MoS$_2$ barrier. Notably, a minimal hard gap of 0.5 meV persists up to a magnetic field of 9 T in the $ab$ plane and 3 T out of plane. This may be the result of very small junction dimensions, or a quantum-limit minimal energy spacing between vortex bound states. We also observed defect assisted tunneling, exhibiting bias-symmetric resonant states which may arise due to resonant Andreev processes.
In inhomogeneous dielectric media the divergence of the electromagnetic stress is related to the gradients of varepsilon and mu, which is a consequence of Maxwells equations. Investigating spherically symmetric media we show that this seemingly universal relationship is violated for electromagnetic vacuum forces such as the generalized van der Waals and Casimir forces. The stress needs to acquire an additional anomalous pressure. The anomaly is a result of renormalization, the need to subtract infinities in the stress for getting a finite, physical force. The anomalous pressure appears in the stress in media like dark energy appears in the energy-momentum tensor in general relativity. We propose and analyse an experiment to probe the van der Waals anomaly with ultracold atoms. The experiment may not only test an unusual phenomenon of quantum forces, but also an analogue of dark energy, shedding light where nothing is known empirically.
We have performed device-based tunnelling spectroscopy of NbSe$_2$ in the vortex state with a magnetic field applied both parallel and perpendicular to the $a-b$ plane. Our devices consist of layered semiconductors placed on top of exfoliated NbSe$_2$ using the van der Waals transfer technique. At zero field, the spectrum exhibits a hard gap, and the quasiparticle peak is split into low and high energy features. The two features, associated with the effective two-band nature of superconductivity in NbSe$_2$, exhibit markedly distinct responses to the application of magnetic field, suggesting an order-of-magnitude difference in the spatial extent of the vortex cores of the two bands. At energies below the superconducting gap, the hard gap gives way to vortex-bound Caroli-de Gennes-Matricon states, allowing the detection of individual vortices as they enter and exit the junction. Analysis of the sub-gap spectra upon application of parallel magnetic field allows us to track the process of vortex surface formation and spatial rearrangement in the bulk.
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