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Register a new userSuperconductivity in Shear Strained Semiconductors
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Semiconductivity and superconductivity are remarkable quantum phenomena that have immense impact on science and technology, and materials that can be tuned, usually by pressure or doping, to host both types of quantum states are of great fundamental and practical significance. Here we show by first-principles calculations a distinct route for tuning semiconductors into superconductors by diverse large-range elastic shear strains, as demonstrated in exemplary cases of silicon and silicon carbide. Analysis of strain driven evolution of bonding structure, electronic states, lattice vibration, and electron-phonon coupling unveils robust pervading deformation induced mechanisms auspicious for modulating semiconducting and superconducting states under versatile material conditions. This finding opens vast untapped structural configurations for rational exploration of tunable emergence and transition of these intricate quantum phenomena in a broad range of materials.
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An extended study on PdS is carried out with the measurements of the resistivity, Hall coefficient, Raman scattering, and X-ray diffraction at high pressures up to 42.3 GPa. With increasing pressure, superconductivity is observed accompanying with a structural phase transition at around 19.5 GPa. The coexistence of semiconducting and metallic phases observed at normal state is examined by the Raman scattering and X-ray diffraction between 19.5 and 29.5 GPa. After that, only the metallic normal state maintains with an almost constant superconducting transition temperature. The similar evolution between the superconducting transition temperature and carrier concentration with pressure supports the phonon-mediated superconductivity in this material. These results highlight the important role of pressure played in inducing superconductivity from these narrow band-gap semiconductors.
In this article we shortly review previous and recently published experimental results that provide evidence for intrinsic, magnetic-impurity-free ferromagnetism and for high-temperature superconductivity in carbon-based materials. The available data suggest that the origin of those phenomena is related to structural disorder and the presence of light elements like hydrogen, oxygen and/or sulfur.
We generalize the Wannier interpolation of the electron-phonon matrix elements to the case of polar-optical coupling in polar semiconductors. We verify our methodological developments against experiments, by calculating the widths of the electronic bands due to electron-phonon scattering in GaAs, the prototype polar semiconductor. The calculated widths are then used to estimate the broadenings of excitons at critical points in GaAs and the electron-phonon relaxation times of hot electrons. Our findings are in good agreement with available experimental data. Finally, we demonstrate that while the Frohlich interaction is the dominant scattering process for electrons/holes close to the valley minima, in agreement with low-field transport results, at higher energies, the intervalley scattering dominates the relaxation dynamics of hot electrons or holes. The capability of interpolating the polar-optical coupling opens new perspectives in the calculation of optical absorption and transport properties in semiconductors and thermoelectrics.
Layered platinum tellurium (PtTe2) was recently synthesized with controllable layer numbers down to a monolayer limit. Using ab initio calculations based on anisotropic Midgal-Eliashberg formalism, we show that by rubidium (Rb) intercalation, weak superconductivity in bilayer PtTe2 can be significantly boosted with superconducting Tc = 8 K in the presence of spin-orbit coupling (SOC). The intercalant on one hand mediates the interlayer coupling and serves as an electron donor, leading to large density of states at Fermi energy. On the other hand, it increases the mass-enhancement parameter with electron-phonon coupling strength comparable to that of Pt. The potassium intercalated bilayer PtTe2 has a comparable Tc to the case of Rb intercalation. The relatively high Tc with SOC combined with experimental accessible crystal structures suggest that these superconductors are promising platforms to study the novel quantum physics associated with two-dimensional superconductivity, such as the recently proposed type-II Ising superconductivity.
We report a reinvestigation of superconducting Sn$_{1-x}$In$_{x}$Te at both low and high In doping levels. Analysis of the superconductivity reveals a fundamental change as a function of textit{x}: the system evolves from a weakly coupled to a strongly coupled superconductor with increasing indium content. Hall Effect measurements further show that the carrier density does not vary linearly with Indium content; indeed at high Indium content, the samples are overall textit{n}-type, which is contrary to expectations of the standard picture of In$^{1+}$ replacing Sn$^{2+}$ in this material. Density functional theory calculations probing the electronic state of In in SnTe show that it does not act as a trivial hole dopant, but instead forms a distinct, partly filled In 5textit{s} - Te 5textit{p} hybridized state centered around E$_F$, very different from what is seen for other nominal hole dopants such as Na, Ag, and vacant Sn sites. We conclude that superconducting In-doped SnTe therefore cannot be considered as a simple hole doped semiconductor.
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