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Register a new userHighly tunable magnetic phases in transition metal dichalcogenide Fe$_{1/3+delta}$NbS$_2$
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Layered transition metal dichalcogenides (TMDCs) host a plethora of interesting physical phenomena ranging from charge order to superconductivity. By introducing magnetic ions into 2H-NbS$_2$, the material forms a family of magnetic intercalated TMDCs T$_x$NbS$_2$ (T = 3d transition metal). Recently, Fe$_{1/3+delta}$NbS$_2$ has been found to possess intriguing resistance switching and magnetic memory effects coupled to the N{e}el temperature of T$_N sim 45$ K [1,2]. We present comprehensive single crystal neutron diffraction measurements on under-intercalated ($delta sim -0.01$), stoichiometric, and over-intercalated ($delta sim 0.01$) samples. Magnetic defects are usually considered to suppress magnetic correlations and, concomitantly, transition temperatures. Instead, we observe highly tunable magnetic long-ranged states as the Fe concentration is varied from under-intercalated to over-intercalated, that is from Fe vacancies to Fe interstitials. The under- and over- intercalated samples reveal distinct antiferromagnetic stripe and zig-zag orders, associated with wave vectors $k_1$ = (0.5, 0, 0) and $k_2$ = (0.25, 0.5, 0), respectively. The stoichiometric sample shows two successive magnetic phase transitions for these two wave vectors with an unusual rise-and-fall feature in the intensities connected to $k_1$. We ascribe this sensitive tunability to the competing next nearest neighbor exchange interactions and the oscillatory nature of the Ruderman-Kittel-Kasuya-Yosida (RKKY) mechanism. We discuss experimental observations that relate to the observed intriguing switching resistance behaviors. Our discovery of a magnetic defect tuning of the magnetic structure in bulk crystals Fe$_{1/3+delta}$NbS$_2$ provides a possible new avenue to implement controllable antiferromagnetic spintronic devices.
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Transition-metal dichalcogenide IrTe2 has attracted attention because of striped lattice, charge ordering and superconductivity. We have investigated the surface structure of IrTe2, using low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). A complex striped lattice modulations as a function of temperature is observed, which shows hysteresis between cooling and warming. While the bulk 5x1 and 8x1 phases appear at high temperatures, the surface ground state has the 6x1 phase, not seen in the bulk, and the surface transition temperatures are distinct from the bulk. The broken symmetry at the surface creates a quite different phase diagram, with the coexistence of several periodicities resembling devils staircase behavior.
The crystal structure of a disordered form of Cr$_{1/3}$NbS$_2$ has been characterized using diffraction and inelastic scattering of synchrotron radiation. In contrast to the previously reported symmetry (P6$_3$22), the crystal can be described by a regular twinning of an average P6$_3$ structure with three disordered positions of the Cr ions. Short-range correlations of the occupational disorder result in a quite intense and structured diffuse scattering; a static nature of the disorder was unambiguously attributed by the inelastic x-ray scattering. The diffuse scattering has been modeled using a reverse Monte-Carlo algorithm assuming a disorder of the Cr sub-lattice only. The observed correlated disorder of the Cr sub-lattice reduces the temperature of the magnetic ordering from 130 K to 88 K and drastically modifies the field dependence of the magnetization as it is evidenced by the SQUID magnetometery. We conclude, that in contrast to the helicoidal spin structure assumed for P6$_3$22 form, the compound under study is ferromagnetically ordered with a pronounced in-plane anisotropy.
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe$_2$ thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{times}{sqrt{3a}} periodicity, as opposed to the previously reported hexagonal $4atimes4a$ structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same $4atimessqrt{3}a$ CDW periodicity and an energy gap of $2Delta_{CDW}=(9.1pm0.1)$ meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both $4atimes4a$ and $4atimessqrt{3}a$ structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings.
Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. These fermions with linear dispersions near the Dirac or Weyl points obey Lorentz invariance, and the chiral anomaly leads to novel quantum phenomena such as negative magnetoresistance. The Lorentz invariance is, however, not necessarily respected in condensed matter physics, and thus Lorentz-violating type-II Dirac fermions with strongly tilted cones can be realized in topological semimetals. Here, we report the first experimental evidence of type-II Dirac fermions in bulk stoichiometric PtTe$_2$ single crystal. Angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles calculations reveal a pair of strongly tilted Dirac cones along the $Gamma$-A direction under the symmetry protection, confirming PtTe$_2$ as a type-II Dirac semimetal. The realization of type-II Dirac fermions opens a new door for exotic physical properties distinguished from type-I Dirac fermions in condensed matter materials.
Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stable. We calculate both the optical and static dielectric constants in the in-plane and out-of-plane directions for both monolayer and bulk TMNHs. In monolayers, the out-of-plane static dielectric constant ranges from 5.04 (ZrNCl) to 6.03 (ZrNBr) whereas in-plane dielectric constants range from 13.18 (HfNBr) to 74.52 (TiNCl). We show that the bandgap of TMNHs ranges from 1.53 eV (TiNBr) to 3.36 eV (HfNCl) whereas the affinity ranges from 4.01 eV (HfNBr) to 5.60 eV (TiNCl). Finally, we estimate the dielectric leakage current density of transistors with six TMNH monolayer dielectrics with five monolayer channel TMDs (MoS2, MoSe2, MoTe2, WS2, and WSe2). For p-MOS TMD channel transistors, 19 out of 30 combinations have a smaller leakage current compared to monolayer hexagonal boron nitride (hBN), a well-known vdW dielectric. The smallest monolayer leakage current of 2.14*10-9 A/cm2 is predicted for a p-MOS WS2 transistor with HfNCl as a gate dielectric. HfNBr, HfNCl, ZrNBr, and ZrNCl are also predicted to yield small leakage currents in certain p-MOS TMD transistors.
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