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Register a new userLorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$
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Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. These fermions with linear dispersions near the Dirac or Weyl points obey Lorentz invariance, and the chiral anomaly leads to novel quantum phenomena such as negative magnetoresistance. The Lorentz invariance is, however, not necessarily respected in condensed matter physics, and thus Lorentz-violating type-II Dirac fermions with strongly tilted cones can be realized in topological semimetals. Here, we report the first experimental evidence of type-II Dirac fermions in bulk stoichiometric PtTe$_2$ single crystal. Angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles calculations reveal a pair of strongly tilted Dirac cones along the $Gamma$-A direction under the symmetry protection, confirming PtTe$_2$ as a type-II Dirac semimetal. The realization of type-II Dirac fermions opens a new door for exotic physical properties distinguished from type-I Dirac fermions in condensed matter materials.
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Layered platinum tellurium (PtTe2) was recently synthesized with controllable layer numbers down to a monolayer limit. Using ab initio calculations based on anisotropic Midgal-Eliashberg formalism, we show that by rubidium (Rb) intercalation, weak superconductivity in bilayer PtTe2 can be significantly boosted with superconducting Tc = 8 K in the presence of spin-orbit coupling (SOC). The intercalant on one hand mediates the interlayer coupling and serves as an electron donor, leading to large density of states at Fermi energy. On the other hand, it increases the mass-enhancement parameter with electron-phonon coupling strength comparable to that of Pt. The potassium intercalated bilayer PtTe2 has a comparable Tc to the case of Rb intercalation. The relatively high Tc with SOC combined with experimental accessible crystal structures suggest that these superconductors are promising platforms to study the novel quantum physics associated with two-dimensional superconductivity, such as the recently proposed type-II Ising superconductivity.
Topological semimetals have attracted extensive research interests for realizing condensed matter physics counterparts of three-dimensional Dirac and Weyl fermions, which were originally introduced in high energy physics. Recently it has been proposed that type-II Dirac semimetal can host a new type of Dirac fermions which break Lorentz invariance and therefore does not have counterpart in high energy physics. Here we report the electronic structure of high quality PtSe$_2$ crystals to provide direct evidence for the existence of three-dimensional type-II Dirac fermions. A comparison of the crystal, vibrational and electronic structure to a sister compound PtTe$_2$ is also discussed. Our work provides an important platform for exploring the novel quantum phenomena in the PtSe$_2$ class of type-II Dirac semimetals.
Based on first-principles calculations and effective model analysis, a Dirac nodal-net semimetal state is recognized in AlB$_2$-type TiB$_2$ and ZrB$_2$ when spin-orbit coupling (SOC) is ignored. Taking TiB$_2$ as an example, there are several topological excitations in this nodal-net structure including triple point, nexus, and nodal link, which are protected by coexistence of spatial-inversion symmetry and time reversal symmetry. This nodal-net state is remarkably different from that of IrF$_4$, which requires sublattice chiral symmetry. In addition, linearly and quadratically dispersed two-dimensional surface Dirac points are identified as having emerged on the B-terminated and Ti-terminated (001) surfaces of TiB$_2$ respectively, which are analogous to those of monolayer and bilayer graphene.
Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stable. We calculate both the optical and static dielectric constants in the in-plane and out-of-plane directions for both monolayer and bulk TMNHs. In monolayers, the out-of-plane static dielectric constant ranges from 5.04 (ZrNCl) to 6.03 (ZrNBr) whereas in-plane dielectric constants range from 13.18 (HfNBr) to 74.52 (TiNCl). We show that the bandgap of TMNHs ranges from 1.53 eV (TiNBr) to 3.36 eV (HfNCl) whereas the affinity ranges from 4.01 eV (HfNBr) to 5.60 eV (TiNCl). Finally, we estimate the dielectric leakage current density of transistors with six TMNH monolayer dielectrics with five monolayer channel TMDs (MoS2, MoSe2, MoTe2, WS2, and WSe2). For p-MOS TMD channel transistors, 19 out of 30 combinations have a smaller leakage current compared to monolayer hexagonal boron nitride (hBN), a well-known vdW dielectric. The smallest monolayer leakage current of 2.14*10-9 A/cm2 is predicted for a p-MOS WS2 transistor with HfNCl as a gate dielectric. HfNBr, HfNCl, ZrNBr, and ZrNCl are also predicted to yield small leakage currents in certain p-MOS TMD transistors.
We report experimental observation of the Planar Hall effect (PHE) in a type-II Dirac semimetal PtTe$_2$. This unusual Hall effect is not expected in nonmagnetc materials such as PtTe$_2$, and has been observed previously mostly in magnetic semiconductors or metals. Remarkably, the PHE in PtTe$_2$ can be observed up to temperatures near room temperature which indicates the robustness of the effect. This is in contrast to the chiral anomaly induced negative longitudnal magnetoresistance (LMR), which can be observed only in the low temperature regime and is sensitive to extrinsic effects, such as current jetting and chemical inhomogeneities in crystals of high mobility. Planar Hall effect on the other hand is a purely intrinsic effect generated by the Berry curvature in Weyl semimetals. Additionally, the PHE is observed for PtTe$_2$ even though the Dirac node is $approx 0.8$~eV away from the Fermi level. Thus our results strongly indicate that PHE can be used as a crucial transport diagnostic for topological character even for band structures with Dirac nodes slightly away from the Fermi energy.
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