No Arabic abstract
We propose an analytical approach to high-harmonic generation (HHG) for nonperturbative low-frequency and high-intensity fields based on the (Jeffreys-)Wentzel-Kramers-Brillouin (WKB) approximation. By properly taking into account Stokes phenomena of WKB solutions, we obtain wavefunctions that systematically include repetitive dynamics of production and acceleration of electron-hole pairs and quantum interference due to phase accumulation between different pair production times (St{u}ckelberg phase). Using the obtained wavefunctions without relying on any phenomenological assumptions, we explicitly compute electric current (including intra- and inter-band contributions) as the source of HHG for a massive Dirac system in (1+1)-dimensions under an ac electric field. We demonstrate that the WKB approximation agrees well with numerical results obtained by solving the time-dependent Schr{o}dinger equation and point out that the quantum interference is important in HHG. We also predict in the deep nonperturbative regime that (1) harmonic intensities oscillate with respect to electric-field amplitude and frequency, with a period determined by the St{u}ckelberg phase; (2) cutoff order of HHG is determined by the Keldysh parameter; and that (3) non-integer harmonics, controlled by the St{u}ckelberg phase, appear as a transient effect.
We study high-harmonic generation (HHG) in the one-dimensional Hubbard model in order to understand its relation to elementary excitations as well as the similarities and differences to semiconductors. The simulations are based on the infinite time-evolving block decimation (iTEBD) method and exact diagonalization. We clarify that the HHG originates from the doublon-holon recombination, and the scaling of the cutoff frequency is consistent with a linear dependence on the external field. We demonstrate that the subcycle features of the HHG can be reasonably described by a phenomenological three step model for a doublon-holon pair. We argue that the HHG in the one-dimensional Mott insulator is closely related to the dispersion of the doublon-holon pair with respect to its relative momentum, which is not necessarily captured by the single-particle spectrum due to the many-body nature of the elementary excitations. For the comparison to semiconductors, we introduce effective models obtained from the Schrieffer-Wolff transformation, i.e. a strong-coupling expansion, which allows us to disentangle the different processes involved in the Hubbard model: intraband dynamics of doublons and holons, interband dipole excitations, and spin exchanges. These demonstrate the formal similarity of the Mott system to the semiconductor models in the dipole gauge, and reveal that the spin dynamics, which does not directly affect the charge dynamics, can reduce the HHG intensity. We also show that the long-range component of the intraband dipole moment has a substantial effect on the HHG intensity, while the correlated hopping terms for the doublons and holons essentially determine the shape of the HHG spectrum. A new numerical method to evaluate single-particle spectra within the iTEBD method is also introduced.
We study the multicritical behavior for the semimetal-insulator transitions on graphenes honeycomb lattice using the Gross-Neveu-Yukawa effective theory with two order parameters: the SO(3) (Heisenberg) order parameter describes the antiferromagnetic transition, and the $mathbb{Z}_2$ (Ising) order parameter describes the transition to a staggered density state. Their coupling induces multicritical behavior which determines the structure of the phase diagram close to the multicritical point. Depending on the number of fermion flavors $N_f$ and working in the perturbative regime in vicinity of three (spatial) dimensions, we observe first order or continuous phase transitions at the multicritical point. For the graphene case of $N_f=2$ and within our low order approximation, the phase diagram displays a tetracritical structure.
We study the high harmonic generation (HHG) in Mott insulators using Floquet dynamical mean-field theory (DMFT). We show that the main origin of the HHG in Mott insulators is the doublon-holon recombination, and that the character of the HHG spectrum differs depending on the field strength. In the weaker-field regime, the HHG spectrum shows a single plateau as in the HHG from gases, and its cut-off energy $epsilon_{rm cut}$ scales linearly with the field strength $E_0$ as $epsilon_{rm cut}=Delta_{rm gap} + alpha E_0$, where $Delta_{rm gap}$ is the Mott gap. On the other hand, in the stronger-field regime, multiple plateaus emerge and the $m$-th cut-off scales as $epsilon_{rm cut,m}=U + m E_0$. We show that this difference originates from the different dynamics of the doublons and holons in the weak- and strong-field regimes. We also comment on the similarities and differences between HHG from Mott insulators and from semiconductors. This proceedings paper complements our recent work, Phys. Rev. Lett. 121, 057405 (2018), with additional results and analyses.
In this work we present a model for the determination of the interaction energy for triplet and singlet states in atoms with incomplete filled shells. Our model includes the modification of the Coulombs law by the interaction between the magnetic moments of the electrons and a Heisenberg term. We find that the energy of the triplet state is lower than the energy of the singlet state. We calculate the interaction energy between the electrons from the adjacent atoms in fcc and bcc lattices and we find that the minimum interaction energy is attained for the triplet state. The result is presented for the interaction between the electrons of the first coordination group. The interaction energy which aligns the spins is used to evaluate the Curie temperature in a mean field model. Compared to previous models, our simple model fits the experimental data.
The unique properties of massless Dirac fermions lead to many remarkable phenomena, and a major challenge towards their technological exploitation is the development of materials with tunable Dirac states. Here we show that this goal may be achieved by using electron-electron correlations in the quasi 2D system BaNiS2. By means of ARPES and first-principles calculations, we unveil the formation of Dirac states by the hybridization of correlated d-electrons with ligand orbitals, which provides an effective band crossing in the presence of a nonsymmorphic symmetry. We show that this mechanism forms Dirac cones extending over a wide energy window around the Fermi level, and that node location in k-space can vary along the Gamma - M symmetry line, instead of being pinned at symmetry points as commonly found in graphene and other Dirac materials. These unique characteristics make BaNiS2 an ideal playground to explore electronic correlation effects in Dirac materials.