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Register a new userEnhanced multiexciton formation by an electron-hole plasma in 2D semiconductors
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Multiexcitons in monolayer WSe2 exhibit a suite of optoelectronic phenomena that are unique to those of their single exciton constituents. Here, photoluminescence action spectroscopy shows that multiexciton formation is enhanced with increasing optical excitation energy. This enhancement is attributed to the multiexciton formation processes from an electron-hole plasma and results in over 300% more multiexciton emission than at lower excitation energies at 4 K. The energetic onset of the enhancement coincides with the quasiparticle bandgap, corroborating the role of the electron-hole plasma, and the enhancement diminishes with increasing temperature. The results reveal that the strong interactions responsible for ultrafast exciton formation also affect multiexciton phenomena, and both multiexciton and single exciton states play significant roles in plasma thermalization in 2D semiconductors.
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We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monitored by the carrier dynamics and the time-resolved spectral characteristics of the light emission. The dependence on carrier density of the photoluminescence rise time is strongly modified around a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2 meV). In a similar way, the rise-time dependence on lattice temperature undergoes a relatively abrupt change at an excitation density of 120-180x10^15 cm^-3, which is about five times greater than the calculated Mott density in GaAs taking into account many body corrections.
We report a study of quantum oscillations in the high-field magneto-resistance of the nodal-line semimetal HfSiS. In the presence of a magnetic field up to 31 T parallel to the c-axis, we observe quantum oscillations originating both from orbits of individual electron and hole pockets, and from magnetic breakdown between these pockets. In particular, we find an oscillation associated with a breakdown orbit enclosing one electron and one hole pocket in the form of a `figure of eight. This observation represents an experimental confirmation of the momentum space analog of Klein tunneling. When the c-axis and the magnetic field are misaligned with respect to one another, this oscillation rapidly decreases in intensity. Finally, we extract the cyclotron masses from the temperature dependence of the oscillations, and find that the mass of the figure of eight orbit corresponds to the sum of the individual pockets, consistent with theoretical predictions for Klein tunneling in topological semimetals.
Long-range and fast transport of coherent excitons is important for development of high-speed excitonic circuits and quantum computing applications. However, most of these coherent excitons have only been observed in some low-dimensional semiconductors when coupled with cavities, as there are large inhomogeneous broadening and dephasing effects on the exciton transport in their native states of the materials. Here, by confining coherent excitons at the 2D quantum limit, we firstly observed molecular aggregation enabled super-transport of excitons in atomically thin two-dimensional (2D) organic semiconductors between coherent states, with a measured a high effective exciton diffusion coefficient of 346.9 cm2/sec at room temperature. This value is one to several orders of magnitude higher than the reported values from other organic molecular aggregates and low-dimensional inorganic materials. Without coupling to any optical cavities, the monolayer pentacene sample, a very clean 2D quantum system (1.2 nm thick) with high crystallinity (J type aggregation) and minimal interfacial states, showed superradiant emissions from the Frenkel excitons, which was experimentally confirmed by the temperature-dependent photoluminescence (PL) emission, highly enhanced radiative decay rate, significantly narrowed PL peak width and strongly directional in-plane emission. The coherence in monolayer pentacene samples was observed to be delocalized over 135 molecules, which is significantly larger than the values (a few molecules) observed from other organic thin films. In addition, the super-transport of excitons in monolayer pentacene samples showed highly anisotropic behaviour. Our results pave the way for the development of future high-speed excitonic circuits, fast OLEDs, and other opto-electronic devices.
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