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Register a new userRoom temperature electrically pumped topological insulator lasers
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Added by
Mercedeh Khajavikhan
Publication date
2021
fields
Physics
and research's language is
English
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Topological insulator lasers (TILs) are a recently introduced family of lasing arrays in which phase locking is achieved through synthetic gauge fields. These single frequency light source arrays operate in the spatially extended edge modes of topologically non-trivial optical lattices. Because of the inherent robustness of topological modes against perturbations and defects, such topological insulator lasers tend to demonstrate higher slope efficiencies as compared to their topologically trivial counterparts. So far, magnetic and non-magnetic optically pumped topological laser arrays as well as electrically pumped TILs that are operating at cryogenic temperatures have been demonstrated. Here we present the first room temperature and electrically pumped topological insulator laser. This laser array, using a structure that mimics the quantum spin Hall effect for photons, generates light at telecom wavelengths and exhibits single frequency emission. Our work is expected to lead to further developments in laser science and technology, while opening up new possibilities in topological photonics.
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Robust laser sources are a fundamental building block for contemporary information technologies. Originating from condensed-matter physics, the concept of topology has recently entered the realm of optics, offering fundamentally new design principles for lasers with enhanced robustness. In analogy to the well-known Majorana fermions in topological superconductors, Dirac-vortex states have recently been investigated in passive photonic systems and are now considered as a promising candidate for single-mode large-area lasers. Here, we experimentally realize the first Dirac-vortex topological lasers in InAs/InGaAs quantum-dot materials monolithically grown on a silicon substrate. We observe room-temperature continuous-wave single-mode linearly polarized vertical laser emission at a telecom wavelength. Most importantly, we confirm that the wavelength of the Dirac-vortex laser is topologically robust against variations in the cavity size, and its free spectral range defies the universal inverse scaling law with the cavity size. These lasers will play an important role in CMOS-compatible photonic and optoelectronic systems on a chip.
Controlling gain and loss of coupled optical cavities can induce non-Hermitian degeneracies of eigenstates, called exceptional points (EPs). Various unconventional phenomena around EPs have been reported, and expected to incorporate extra functionalities into photonic devices. The eigenmode exactly under the EP degeneracy is also predicted to exhibit enhanced radiation. However, such responses have yet to be observed in on-chip lasers, because of both the limited controllability of their gain and loss and the lifting of degeneracy by pump-induced cavity detuning. Here, we report the first non-Hermitian nanophotonic platform based on two electrically pumped photonic crystal lasers and its spontaneous emission at an EP degeneracy. Systematically tuned and independent current injection to our wavelength-scale active heterostructure cavities enables us to demonstrate the clear EP phase transition of their spontaneous emission, accompanied with the spectral coalescence of coupled modes and reversed pump dependence of the intensity. Furthermore, we find experimentally and confirm theoretically the peculiar squared Lorentzian emission spectrum very near the exact EP, which indicates the four-fold enhancement of the photonic local density of states induced purely by the degeneracy. Our results open a new pathway to engineer the light-matter interaction by non-Hermiticity and explore larger reconfigurable laser arrays for further non-Hermitian features and physics.
We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers with saturable absorber. In particular, we observe a superlinear growth of the peak power of SF pulses with increasing amplitude of injected current pulses and attribute it to cooperative pairing of electron-hole (e-h) radiative recombinations. The phase transitions from amplified spontaneous emission to superfluorescence and then to lasing regime is confirmed by observing (i) abrupt peak power growth accompanied by spectral broadening, (ii) spectral shape with hyperbolic secant envelope and (iii) red shift of central wavelength of SF emission pulse. The observed red shift of SF emission is shown to be caused by the pairing of e-h pairs in an indirect cooperative X-transition.
Solution-processed lead halide perovskites have shown very bright future in both solar cells and microlasers. Very recently, the nonlinearity of perovskites started to attract considerable research attention. Second harmonic generation and two-photon absorption have been successfully demonstrated. However, the nonlinearity based perovskite devices such as micro- & nano- lasers are still absent. Here we demonstrate the two-photon pumped nanolasers from perovskite nanowires. The CH3NH3PbBr3 perovskite nanowires were synthesized with one-step solution self-assembly method and dispersed on glass substrate. Under the optical excitation at 800 nm, two-photon pumped lasing actions with periodic peaks have been successfully observed at around 546 nm. The obtained quality (Q) factors of two-photon pumped nanolasers are around 960, and the corresponding thresholds are about 674?J=cm2. Both the Q factors and thresholds are comparable to conventional whispering gallery modes in two-dimensional polygon microplates. Our researches are the first demonstrations of two-photon pumped nanolasers in perovskite nanowires. We believe our finding will significantly expand the application of perovskite in low-cost nonlinear optical devices such as optical limiting, optical switch, and biomedical imaging et al.
Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics.
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