No Arabic abstract
Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM device must be self-heated to its melting temperature during reset. Here, we show that this reset energy can be reduced by nearly two orders of magnitude by minimizing the pulse width. We utilize a high-speed measurement setup to probe the energy consumption in PCM cells with varying pulse width (0.3 to 40 nanoseconds) and uncover the power dissipation dynamics. A key finding is that the switching power (P) remains unchanged for pulses wider than a short thermal time constant of the PCM ($tau$$_t$$_h$ < 1 ns in 50 nm diameter device), resulting in a decrease of energy (E=P$tau$) as the pulse width $tau$ is reduced in that range. In other words, thermal confinement during short pulses is achieved by limiting the heat diffusion time. Our improved programming scheme reduces reset energy density below 0.1 nJ/$mu$m$^2$, over an order of magnitude lower than state-of-the-art PCM, potentially changing the roadmap of future data storage technology and paving the way towards energy-efficient neuromorphic hardware
Magnetic skyrmion is a promising building block for developing information storage and computing devices. It can be stabilized in a ferromagnetic thin film with the Dzyaloshinskii-Moriya interaction (DMI). The moving ferromagnetic skyrmion may show the skyrmion Hall effect, that is, the skyrmion shows a transverse shift when it is driven by a spin current. Here, we numerically and theoretically study the current-driven dynamics of a ferromagnetic nanoscale skyrmion in the presence of the anisotropic DMI, where the skyrmion has an elliptical shape. The skyrmion Hall effect of the elliptical skyrmion is investigated. It is found that the skyrmion Hall angle can be controlled by tuning the profile of elliptical skyrmion. Our results reveal the relation between the skyrmion shape and the skyrmion Hall effect, which could be useful for building skyrmion-based spintronic devices with preferred skyrmion Hall angle. Also, our results provide a method for the minimization of skyrmion Hall angle for applications based on in-line motion of skyrmions.
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here we investigate the projection mechanism in a prominent phase-change memory device architecture, namely mushroom-type phase-change memory. Using nanoscale projected Ge2Sb2Te5 devices we study the key attributes of state-dependent resistance, drift coefficients, and phase configurations, and using them reveal how these devices fundamentally work.
The understanding of how the sub-nanoscale exchange interaction evolves in macroscale correlations and ordered phases of matter, such as magnetism and superconductivity, requires to bridge the quantum and classical worlds. This monumental challenge has so far only been achieved for systems close to their thermodynamical equilibrium. Here we follow in real time the ultrafast dynamics of the macroscale magnetic order parameter triggered by the impulsive optical generation of spin excitations with the shortest possible nanometer-wavelength and femtosecond-period. Our experiments also disclose a possibility for the coherent control of these femtosecond nanomagnons, which are defined by the exchange energy. These findings open up novel opportunities for fundamental research on the role of short-wavelength spin excitations in magnetism and high-temperature superconductivity, since they provide a macroscopic probe of the femtosecond dynamics of sub-nanometer spin-spin correlations and, ultimately, of the exchange energy. With this approach it becomes possible to trace the dynamics of such short-range magnetic correlations for instance during phase transitions. Moreover, our work suggests that nanospintronics and nanomagnonics can employ phase-controllable spin waves with frequencies in the 20 THz domain.
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the heating scheme and the details of the contact geometry play the dominant role in determining the final phase composition of the device such that a non-uniform heating scheme promotes partial amorphization/crystallization for a wide range of pulse parameters enabling multiple resistance levels for data storage applications. Furthermore we find that fluctuations in the snap-back voltage and set/reset resistances in repeated switching experiments are related to the details of the current distribution such that a uniform current injection geometry (i.e. circular contact) favors more reproducible switching parameters. This shows that possible geometrical defects in nanoscale phase change memory devices may play an essential role in the performance of the smallest possible devices through modification of the exact current distribution in the active chalcogenide layer. We present a three-dimensional finite element model of the electro-thermal physics to provide insights into the underlying physical mechanisms of the switching dynamics as well as to quantitatively account for the scaling behaviour of the switching currents in both circular and rectangular contact geometries. The calculated temporal evolution of the heat distribution within the pulse duration shows distinct features in rectangular contacts providing evidence for locally hot spots at the sharp corners of the current injection site due to current crowding effects leading to the observed behaviour.
Artificial spin ice (ASI) are arrays on nanoscaled magnets that can serve both as models for frustration in atomic spin ice as well as for exploring new spin-wave-based strategies to transmit, process, and store information. Here, we exploit the intricate interplay of the magnetization dynamics of two dissimilar ferromagnetic metals arranged on complimentary lattice sites in a square ASI to effectively modulate the spin-wave properties. We show that the interaction between the two sublattices results in unique spectra attributed to each sublattice and we observe inter- and intra-lattice dynamics facilitated by the distinct magnetization properties of the two materials. The dynamic properties are systematically studied by angular-dependent broadband ferromagnetic resonance and confirmed by micromagnetic simulations. We show that the combination of materials with dissimilar magnetic properties enables the realization of a wide range of two-dimensional structures potentially opening the door to new concepts in nanomagnonics.