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Register a new userData-driven analysis of the electronic-structure factors controlling the work functions of perovskite oxides
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Tuning the work functions of materials is of practical interest for maximizing the performance of microelectronic and (photo)electrochemical devices, as the efficiency of these systems depends on the ability to control electronic levels at surfaces and across interfaces. Perovskites are promising compounds to achieve such control. In this work, we examine the work functions of more than 1,000 perovskite oxide surfaces (ABO$_3$) by data-driven (machine-learning) analysis and identify the factors that determine their magnitude. While the work functions of BO$_2$-terminated surfaces are sensitive to the energy of the hybridized oxygen p bands, the work functions of AO-terminated surfaces exhibit a much less trivial dependence with respect to the filling of the d bands of the B-site atom and of its electronic affinity. This study shows the utility of interpretable data-driven models in analyzing the work functions of cubic perovskites from a limited number of electronic-structure descriptors.
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The work function is the parameter of greatest interest in many technological applications involving charge exchange mechanisms at the interface. The possibility to produce samples with a controlled work function is then particularly interesting, albeit challenging. We synthetized nanostructured vanadium oxides films by a room temperature Supersonic Cluster Beam Deposition method, obtaining samples with tunable stoichiometry and work function (3.7-7 eV). We present an investigation of the electronic structure of several vanadium oxides films as a function of the oxygen content via in-situ Auger, valence-band photoemission spectroscopy and work function measurements. The experiments probed the partial 3d density of states, highlighting the presence of strong V3d-O2p and V3d-V4s hybridization which influence 3d occupation. We show how controlling the stoichiometry of the sample implies a control over work function, and that the access to nanoscale quantum confinement can be exploited to increase the work function of the sample relative to the bulk analogue. In general, the knowledge of the interplay among work function, electronic structure, and stoichiometry is strategic to match nanostructured oxides to their target applications.
We show that strong coupling between graphene and the substrate is mitigated when 0.8 monolayer of Na is adsorbed and consolidated on top graphene-on-Ni(111). Specifically, the {pi} state is partially restored near the K-point and the energy gap between the {pi} and {pi}* states reduced to 1.3 eV after adsorption, as measured by angle-resolved photoemission spectroscopy. We show that this change is not caused by intercalation of Na to underneath graphene but it is caused by an electronic coupling between Na on top and graphene. We show further that graphene can be decoupled to a much higher extent when Na is intercalated to underneath graphene. After intercalation, the energy gap between the {pi} and {pi}* states is reduced to 0 eV and these states are identical as in freestanding and n-doped graphene. We conclude thus that two mechanisms of decoupling exist: a strong decoupling through intercalation, which is the same as one found using noble metals, and a weak decoupling caused by electronic interaction with the adsorbate on top.
We have performed a systematic study of the electronic structures of BiMeO3 (Me = Sc, Cr, Mn, Fe, Co, Ni) series by soft X-ray emission (XES) and absorption (XAS) spectroscopy. The band gap values were estimated for all compounds in the series. For BiFeO3 a band gap of ~0.9 eV was obtained from the alignment of the O Ka XES and O 1s XAS. The O 1s XAS spectrum of BiNiO3 indicates that the formation of holes is due to a Ni2+ valency rather than a Ni3+ valency. We have found that the O Ka XES and O 1s XAS of BiMeO3 probing partially occupied and vacant O 2p states, respectively, are in agreement with the O 2p densities of states obtained from spin-polarized band structure calculations. The O Ka XES spectra show the same degree of Bi 6s--O 2p hybridization for all compounds in the series. We argue herein that the stereochemical activity of Bi 6s lone pairs must be supplemented with inversion symmetry breaking to allow electric polarization. For BiMnO3 and BiFeO3, two cases of multiferroic materials in this series, the former breaks the inversion symmetry due to the antiferromagnetic order induced by particular orbital ordering in the highly distorted perovskite structure and the latter has rhombohedral crystal structure without inversion symmetry.
Ba2CoWO6 (BCoW) has been synthesized in polycrystalline form by solid state reaction at 1200C. Structural characterization of the compound was done through X-ray diffraction (XRD) followed by Rietveld analysis of the XRD pattern. The crystal structure is cubic, space group Fm-3m (No 225) with the lattice parameter, a=8.210A. Optical band-gap of the present system has been calculated using the UV-Vis Spectroscopy and Kubelka-Munk function, its value being 2.45 eV. A detailed study of the electronic properties has also been carried out using the density functional theory (DFT) techniques implemented on WIEN2k. Importance of electron-electron interaction between the Co ions leading to half-metallic behavior, crystal and exchange splitting together with the hybridization between O and Co, W has been investigated using the total and partial density of states.
We address the low-energy effective Hamiltonian of electron doped d0 perovskite semiconductors in cubic and tetragonal phases using the k*p method. The Hamiltonian depends on the spin-orbit interaction strength, on the temperature-dependent tetragonal distortion, and on a set of effective-mass parameters whose number is determined by the symmetry of the crystal. We explain how these parameters can be extracted from angle resolved photo-emission, Raman spectroscopy, and magneto-transport measurements and estimate their values in SrTiO3.
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