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Register a new userHeat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene~bilayers
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We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} simeq 2.37$ at $T lesssim 300$~K to $c_{GBL} simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical two-dimensional carriers with $c = 1$. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices.
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We propose a hydrodynamic model describing steady-state and dynamic electron and hole transport properties of graphene structures which accounts for the features of the electron and hole spectra. It is intended for electron-hole plasma in graphene characterized by high rate of intercarrier scattering compared to external scattering (on phonons and impurities), i.e., for intrinsic or optically pumped (bipolar plasma), and gated graphene (virtually monopolar plasma). We demonstrate that the effect of strong interaction of electrons and holes on their transport can be treated as a viscous friction between the electron and hole components. We apply the developed model for the calculations of the graphene dc conductivity, in particular, the effect of mutual drag of electrons and holes is described. The spectra and damping of collective excitations in graphene in the bipolar and monopolar limits are found. It is shown that at high gate voltages and, hence, at high electron and low hole densities (or vice-versa), the excitations are associated with the self-consistent electric field and the hydrodynamic pressure (plasma waves). In intrinsic and optically pumped graphene, the waves constitute quasineutral perturbations of the electron and hole densities (electron-hole sound waves) with the velocity being dependent only on the fundamental graphene constants.
The superconducting pairing of electrons in doped graphene due to in-plane and out-of-plane phonons is considered. It is shown that the structure of the order parameter in the valley space substantially affects conditions of the pairing. Electron-hole pairing in graphene bilayer in the strong coupling regime is also considered. Taking into account retardation of the screened Coulomb pairing potential shows a significant competition between the electron-hole direct attraction and their repulsion due to virtual plasmons and single-particle excitations.
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at u=0 made up by both electrons and holes.
Band structure determines the motion of electrons in a solid, giving rise to exotic phenomena when properly engineered. Drawing an analogy between electrons and photons, artificially designed optical lattices indicate the possibility of a similar band modulation effect in graphene systems. Yet due to the fermionic nature of electrons, modulated electronic systems promise far richer categories of behaviors than those found in optical lattices. Here, we uncovered a strong modulation of electronic states in bilayer graphene subject to periodic potentials. We observed for the first time the hybridization of electron and hole sub-bands, resulting in local band gaps at both primary and secondary charge neutrality points. Such hybridization leads to the formation of flat bands, enabling the study of correlated effects in graphene systems. This work may also offer a viable platform to form and continuously tune Majorana zero modes, which is important to the realization of topological quantum computation.
We consider ground state of electron-hole graphene bilayer composed of two independently doped graphene layers when a condensate of spatially separated electron-hole pairs is formed. In the weak coupling regime the pairing affects only conduction band of electron-doped layer and valence band of hole-doped layer, thus the ground state is similar to ordinary BCS condensate. At strong coupling, an ultrarelativistic character of electron dynamics reveals and the bands which are remote from Fermi surfaces (valence band of electron-doped layer and conduction band of hole-doped layer) are also affected by the pairing. The analysis of instability of unpaired state shows that s-wave pairing with band-diagonal condensate structure, described by two gaps, is preferable. A relative phase of the gaps is fixed, however at weak coupling this fixation diminishes allowing gapped and soliton-like excitations. The coupled self-consistent gap equations for these two gaps are solved at zero temperature in the constant-gap approximation and in the approximation of separable potential. It is shown that, if characteristic width of the pairing region is of the order of magnitude of chemical potential, then the value of the gap in the spectrum is not much different from the BCS estimation. However, if the pairing region is wider, then the gap value can be much larger and depends exponentially on its energy width.
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