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Geometrical Hall effect and momentum-space Berry curvature from spin-reversed band pairs

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 Added by Max Hirschberger
 Publication date 2020
  fields Physics
and research's language is English




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When nanometric, noncoplanar spin textures with scalar spin chirality (SSC) are coupled to itinerant electrons, they endow the quasiparticle wavefunctions with a gauge field, termed Berry curvature, in a way that bears analogy to relativistic spin-orbit coupling (SOC). The resulting deflection of moving charge carriers is termed geometrical (or topological) Hall effect. Previous experimental studies modeled this signal as a real-space motion of wavepackets under the influence of a quantum-mechanical phase. In contrast, we here compare the modification of Bloch waves themselves, and of their energy dispersion, due to SOC and SSC. Using the canted pyrochlore ferromagnet Nd$_2$Mo$_2$O$_7$ as a model compound, our transport experiments and first-principle calculations show that SOC impartially mixes electronic bands with equal or opposite spin, while SSC is much more effective for opposite spin band pairs.



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The wavefuntion of conduction electrons moving in the background of a non-coplanar spin structure can gain a quantal phase - Berry phase - as if the electrons were moving in a strong fictitious magnetic field. Such an emergent magnetic field effect is approximately proportional to the solid angle subtended by the spin moments on three neighbouring spin sites, termed the scalar spin chirality. The entire spin chirality of the crystal, unless macroscopically canceled, causes the geometrical Hall effect of real-space Berry-phase origin, whereas the intrinsic anomalous Hall effect (AHE) in a conventional metallic ferromagnet is of the momentum-space Berry-phase origin induced by relativistic spin-orbit coupling (SOC). Here, we report the ordering phenomena of the spin-trimer scalar spin chirality and the consequent large geometrical Hall effect in the breathing kagome lattice compound Dy$_3$Ru$_4$Al$_{12}$, where the Dy$^{3+}$ moments form non-coplanar spin trimers with local spin chirality. Using neutron diffraction, we show that the local spin chirality of the spin trimers as well as its ferroic/antiferroic orders can be switched by an external magnetic field, accompanying large changes in the geometrical Hall effect. Our finding reveals that systems composed of tunable spin trimers can be a fertile field to explore large emergent electromagnetic responses arising from real-space topological magnetic orders.
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We report an experimental and computational study of the Hall effect in Mn$_{rm 1-x}$Fe$_{rm x}$Si, as complemented by measurements in Mn$_{rm 1-x}$Co$_{rm x}$Si, when helimagnetic order is suppressed under substitutional doping. For small $x$ the anomalous Hall effect (AHE) and the topological Hall effect (THE) change sign. Under larger doping the AHE remains small and consistent with the magnetization, while the THE grows by over a factor of ten. Both the sign and the magnitude of the AHE and the THE are in excellent agreement with calculations based on density functional theory. Our study provides the long-sought material-specific microscopic justification, that while the AHE is due to the reciprocal-space Berry curvature, the THE originates in real-space Berry phases.
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K valleys, having Berry curvatures with opposite signs, and thus vanishing anomalous Hall effect in this system. Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe2 through applying uniaxial strain to break C3v symmetry. As a result, although the Berry curvature itself is still opposite in K and K valleys, the two valleys would contribute equally to nonzero Berry curvature dipole. Upon applying electric field, the emergent Berry curvature dipole would lead to an out-of-plane orbital magnetization, which further induces an anomalous Hall effect with a linear response to E^2, known as nonlinear Hall effect. We show the strain modulated transport properties of nonlinear Hall effect in monolayer WSe2 with moderate hole-doping by gating. The second-harmonic Hall signals show quadratic dependence on electric field, and the corresponding orbital magnetization per current density can reach as large as 60. In contrast to the conventional Rashba-Edelstein effect with in-plane spin polarization, such current-induced orbital magnetization is along the out-of-plane direction, thus promising for high-efficient electrical switching of perpendicular magnetization.
Investigating exotic magnetic materials with spintronic techniques is effective at advancing magnetism as well as spintronics. In this work, we report unusual field-induced suppression of the spin-Seebeck effect (SSE) in a quasi one-dimensional frustrated spin-$frac{1}{2}$ magnet LiCuVO$_4$, known to exhibit spin-nematic correlation in a wide range of external magnetic field $B$. The suppression takes place above $|B| > 2$ T in spite of the $B$-linear isothermal magnetization curves in the same $B$ range. The result can be attributed to the growth of the spin-nematic correlation while increasing $B$. The correlation stabilizes magnon pairs carrying spin-2, thereby suppressing the interfacial spin injection of SSE by preventing the spin-1 exchange between single magnons and conduction electrons at the interface. This interpretation is supported by integrating thermodynamic measurements and theoretical analysis on the SSE.
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In this work, the BiFeO3 (BFO)/SrRuO3 (SRO) heterostructure was fabricated and the anomalous Hall effect (AHE) was investigated the in BFO/SRO. It is found the nonmonotonic anomalous Hall resistivity behavior in BFO/SRO is originated from the inhomogeneous SRO layer instead of the topological Hall effect. It is surprised that the AHE in BFO/SRO structure can be manipulated by ferroelectric polarization of BFO. Moreover, an inhomogeneous phenomenological model has been applied on those structure. Furthermore, the modification of band structure in SRO under ferroelectric polarization was discussed by first principle calculation. The ferroelectric-manipulated AHE suggests a new pathway to realize nonvolatile, reversible and low energy-consuming voltage-controlled spintronic devices.
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