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Register a new userStrong anisotropy of electron-phonon interaction in NbP probed by magnetoacoustic quantum oscillations
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In this study, we report on the observation of de Haas-van Alphen-type quantum oscillations (QO) in the ultrasound velocity of NbP as well as `giant QO in the ultrasound attenuation in pulsed magnetic fields. The difference of the QO amplitude for different acoustic modes reveals a strong anisotropy of the effective deformation potential, which we estimate to be as high as $9,mathrm{eV}$ for certain parts of the Fermi surface. Furthermore, the natural filtering of QO frequencies and the tracing of the individual Landau levels to the quantum limit allows for a more detailed investigation of the Fermi surface of NbP as was previously achieved by means of analyzing QO observed in magnetization or electrical resistivity.
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By use of ultrasound studies we resolved magneto-acoustic quantum oscillation deep into the mixed state of the multiband nonmagnetic superconductor YNi2B2C. Below the upper critical field, only a very weak additional damping appears that can be well explained by the field inhomogeneity caused by the flux-line lattice in the mixed state. This is clear evidence for no or a vanishingly small gap for one of the bands, namely, the spheroidal alpha band. This contrasts de Haas--van Alphen data obtained by use of torque magnetometry for the same sample, with a rapidly vanishing oscillation signal in the mixed state. This points to a strongly distorted flux-line lattice in the latter case that, in general, can hamper a reliable extraction of gap parameters by use of such techniques.
We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by the local vibrations in the surrounding amorphous medium. We demonstrate that this mechanism controls energy relaxation for electrons in Si nanocrystals embedded in a SiO$_2$ matrix, where conventional mechanisms of electron-phonon interaction are not efficient.
Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.
Motivated by the recent discovery of superconductivity in Ca- and Yb-intercalated graphite (CaC$_{6}$ and YbC$_{6}$) and from the ongoing debate on the nature and role of the interlayer state in this class of compounds, in this work we critically study the electron-phonon properties of a simple model based on primitive graphite. We show that this model captures an essential feature of the electron-phonon properties of the Graphite Intercalation Compounds (GICs), namely, the existence of a strong dormant electron-phonon interaction between interlayer and $pi ^{ast}$ electrons, for which we provide a simple geometrical explanation in terms of NMTO Wannier-like functions. Our findings correct the oversimplified view that nearly-free-electron states cannot interact with the surrounding lattice, and explain the empirical correlation between the filling of the interlayer band and the occurrence of superconductivity in Graphite-Intercalation Compounds.
Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi$_{2}$Se$_{3}$ crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between $0^circ$ and $90^circ$, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross-sections down to $24$~meV. There is therefore no signature of a camel-back in the valence band of our bulk samples, in accordance with the direct band gap predicted by $GW$ calculations.
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