Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userStructural evolution of binary oxide nanolaminates with annealing and its impact on room-temperature internal friction
103
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Internal friction in oxide thin films imposes a critical limitation to the sensitivity and stability of ultra-high finesse optical cavities for gravitational wave detectors. Strategies like doping or creating nanolaminates are sought to introduce structural modifications that reduce internal friction. This work describes an investigation of the morphological changes SiO2/Ta2O5 and TiO2/Ta2O5 nanolaminates undergo with annealing and their impact on room temperature internal friction. It is demonstrated that thermal treatment results in a reduction of internal friction in both nanolaminates, but through different pathways. In the SiO2/Ta2O5 nanolaminate, which layers remain intact after annealing, the total reduction in internal friction follows the reduction in the composing SiO2 and Ta2O5 layers. Instead, interdiffusion initiated by annealing at the interface of the TiO2/Ta2O5 nanolaminate and the formation of a mixed phase dictate a more significant reduction in internal friction to ~ 2.6 * 10-4, a value lower than any other Ta2O5 mixture coating with similar cation concentration.
rate research
Read More
Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of multi-state memory devices that allow for electrical writing and non-destructive magnetic read-out operation. The great challenge is to create multiferroic materials that operate at room-temperature and have a large ferroelectric polarization P. Cupric oxide, CuO, is promising because of its large P ~ 10^{2} {mu}C.m^{-2}, but is unfortunately only multiferroic in a temperature range of 20 K, from 210 to 230 K. Here, using a combination of density functional theory and Monte Carlo calculations, we establish that pressure-driven phase competition induces a giant stabilization of the multiferroic phase of CuO, which at 20-40 GPa becomes stable in a domain larger than 300 K, from 0 to T > 300 K. Thus, under high-pressure, CuO is predicted to be a room-temperature multiferroic with large polarization.
In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond-air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 {deg}C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 {deg}C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.
Electric polarization loops are measured at room temperature on highly pure BiFeO3 single crystals synthesized by a flux growth method. Because the crystals have a high electrical resistivity, the resulting low leakage currents allow us to measure a large spontaneous polarization reaching 100 microC.cm^{-2}, a value never reported in the bulk. During electric cycling, the slow degradation of the material leads to an evolution of the hysteresis curves eventually preventing full saturation of the crystals.
We report annealing induced exchange bias in Fe-Cu-Pt based heterostructures with Cu as an intermediate layer (Fe/Cu/Pt heterostructure) and capping layer (Fe/Pt/Cu heterostructure). Exchange bias observed at room temperature (300 K) is found to be dependent on the annealing temperature. We obtained positive exchange bias of 120 Oe on annealing both the heterostructures at 400 oC, while on annealing these heterostructures at 500 and 600 oC a negative exchange bias of ~ -100 Oe was found. X-ray reflectivity and polarized neutron reflectivity measurements provided evolution of depth dependent structure and magnetic properties of the heterostructures on annealing at different temperatures and revealed coexistence of soft and hard (alloy) magnetic phases across the thickness of the films. Rapid and long range interdiffusion at interfaces on annealing the systems at a temperature above 400 oC resulted into formation of a ternary alloy phase. These results can be understood within the context of a very unusual interface exchange interaction at the interface of hard/soft magnetic phases, which are dependent on the annealing temperature.
Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ~6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance. In addition, we suggest that the spin transmission through the LAO layer at high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
