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Engineering photonic environments for two-dimensional materials

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 Added by Shoufeng Lan
 Publication date 2020
  fields Physics
and research's language is English




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A fascinating photonic platform with a small device scale, fast operating speed, as well as low energy consumption is two-dimensional (2D) materials, thanks to their in-plane crystalline structures and out-of-plane quantum confinement. The key to further advancement in this research field is the ability to modify the optical properties of the 2D materials. The modifications typically come from the materials themselves, for example, altering their chemical compositions. This article reviews a comparably less explored but promising means, through engineering the photonic surroundings. Rather than modifying materials themselves, this means manipulates the dielectric and metallic environments, both uniform and nanostructured, that directly interact with the materials. For 2D materials that are only one or a few atoms thick, the interaction with the environment can be remarkably efficient. This review summarizes the three degrees of freedom of this interaction: weak coupling, strong coupling, and multi-functionality. Also, it reviews a relatively timing concept of engineering that directly applied to the 2D materials by patterning. Benefiting from the burgeoning development of nanophotonics, the engineering of photonic environments provides a versatile and creative methodology of reshaping light-matter interaction in 2D materials.



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Here we would like to discuss the light transmission modulation by periodic and disordered one dimensional (1D) photonic structures. In particular, we will present some theoretical and experimental findings highlighting the peculiar optical properties of: i) 1D periodic and disordered photonic structures made with two or more materials; ii) 1D photonic structures in which the homogeneity or the aggregation of the high refractive index layers is controlled. We will focus also on the fabrication aspects of these structures.
Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. While extrinsic mechanisms can in general be minimized by improving fabrication processes, the suppression of intrinsic scattering (driven e.g. by electron-phonon interactions) requires to modify the electronic or vibrational properties of the material. Since intervalley scattering critically affects mobilities, a powerful approach to enhance transport performance relies on engineering the valley structure. We show here the power of this strategy using uniaxial strain to lift degeneracies and suppress scattering into entire valleys, dramatically improving performance. This is shown in detail for arsenene, where a 2% strain stops scattering into 4 of the 6 valleys, and leads to a 600% increase in mobility. The mechanism is general and can be applied to many other materials, including in particular the isostructural antimonene and blue phosphorene.
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since the Coulomb interaction is responsible for the insulating state of Mott materials, dielectric screening provides direct access to the Mottness. Our many-body calculations reveal the spectroscopic fingerprints of Coulomb engineering. We demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on this theoretical analysis, we discuss prerequisites for an effective experimental realization of Coulomb engineering.
Symmetry breaking in two-dimensional layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including but not limited to spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose-Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of two-dimensional layered materials not only offers extraordinary opportunities to tune their physical properties, but also provides unprecedented possibilities to introduce completely new physics and technological innovations in electronics, photonics and optoelectronics. Indeed, over the past 15 years, a wide variety of physical, structural and chemical approaches have been developed to engineer symmetry breaking of two-dimensional layered materials. In this Review, we focus on the recent progresses on engineering the breaking of inversion, rotational, time reversal and spontaneous gauge symmetries in two-dimensional layered materials, and illustrate our perspectives on how these may lead to potential new physics and applications.
The field of 2D materials-based nanophotonics has been growing at a rapid pace, triggered by the ability to design nanophotonic systems with in situ control, unprecedented degrees of freedom, and to build material heterostructures from bottom up with atomic precision. A wide palette of polaritonic classes have been identified, comprising ultra confined optical fields, even approaching characteristic length scales of a single atom. These advances have been a real boost for the emerging field of quantum nanophotonics, where the quantum mechanical nature of the electrons and-or polaritons and their interactions become relevant. Examples include, quantum nonlocal effects, ultrastrong light matter interactions, Cherenkov radiation, access to forbidden transitions, hydrodynamic effects, single plasmon nonlinearities, polaritonic quantization, topological effects etc. In addition to these intrinsic quantum nanophotonic phenomena, the 2D material system can also be used as a sensitive probe for the quantum properties of the material that carries the nanophotonics modes, or quantum materials in its vicinity. Here, polaritons act as a probe for otherwise invisible excitations, e.g. in superconductors, or as a new tool to monitor the existence of Berry curvature in topological materials and superlattice effects in twisted 2D materials.
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