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Register a new userObservation of topological electronic structure in quasi-1D superconductor TaSe3
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Topological superconductors (TSCs), with the capability to host Majorana bound states that can lead to non-Abelian statistics and application in quantum computation, have been one of the most intensively studied topics in condensed matter physics recently. Up to date, only a few compounds have been proposed as candidates of intrinsic TSCs, such as doped topological insulator CuxBi2Se3 and iron-based superconductor FeTe0.55Se0.45. Here, by carrying out synchrotron and laser based angle-resolved photoemission spectroscopy (ARPES), we systematically investigated the electronic structure of a quasi-1D superconductor TaSe3, and identified the nontrivial topological surface states. In addition, our scanning tunneling microscopy (STM) study revealed a clean cleaved surface with a persistent superconducting gap, proving it suitable for further investigation of potential Majorana modes. These results prove TaSe3 as a stoichiometric TSC candidate that is stable and exfoliable, therefore a great platform for the study of rich novel phenomena and application potentials.
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The high breakdown current densities and resilience to scaling of the metallic transition metal trichalcogenides TaSe3 and ZrTe3 make them of interest for possible interconnect applications, and it motivates this study of their thermal conductivities and phonon properties. These crystals consist of planes of strongly bonded one-dimensional chains more weakly bonded to neighboring chains. Phonon dispersions and the thermal conductivity tensors are calculated using density functional theory combined with an iterative solution of the phonon Boltzmann transport equation. The phonon velocities and the thermal conductivities of TaSe3 are considerably more anisotropic than those of ZrTe3. The maximum LA velocity in ZrTe3 occurs in the cross-chain direction, and this is consistent with the strong cross-chain bonding that gives rise to large Fermi velocities in that direction. The thermal conductivities are similar to those of other metallic two-dimensional transition metal dichalcogenides. At room temperature, a significant portion of the heat is carried by the optical modes. In the low frequency range, the phonon lifetimes and mean free paths in TaSe3 are considerably shorter than those in ZrTe3. The shorter lifetimes in TaSe3 are consistent with the presence of lower frequency optical branches and zone-folding features in the acoustic branches that arise due to the doubling of the TaSe3 unit cell within the plane.
We use magnetization measurements, high-resolution angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations to study the electronic properties of Au${}_{2}$Pb, a topological superconductor candidate. The magnetization measurements reveal three discontinuities at 40, 51, and 99~K that agree well with reported structural phase transitions. ARPES measurements of the Au${}_{2}$Pb (111) surface at 110~K shows a shallow hole pocket at the center and flower-petal-like surface states at the corners of the Brillouin zone. These observations match the results of DFT calculations relatively well. The flower-petal-like surface states appear to originate from a Dirac like dispersion close to the zone corner. For the Au${}_{2}$Pb (001) surface at 150~K, ARPES reveals at least one electron pocket between the $Gamma$ and $M$ points, consistent with the DFT calculations. Our results provide evidence for the possible existence of Dirac state in this material.
The recently reported nickel carbide superconductor, body centered tetragonal $I4/mmm$ Th$_2$NiC$_2$ with T$_c$ = 8.5 K increasing to 11.2 K upon alloying Th with Sc, is found to have very fine structure in its electronic spectrum, according to density functional based first principles calculations. The filled Ni 3d band complex is hybridized with C $2p$ and Th character to and through the Fermi level ($E_f$), and a sharply structured density of states arises only when spin-orbit coupling is included, which splits a zone-center degeneracy leaving a very flat band edge lying at the Fermi level. The flat part of the band corresponds to an effective mass $m^*_{z} rightarrow infty$ with large and negative $m^*_{x}=m^*_{y}$. Although the region over which the effective mass characterization applies is less than 1% of the zone volume, it yet supplies of the order of half the states at (or just above) the Fermi level. The observed increase of T$_c$ by hole-doping is accounted for if the reference as-synthesized sample is minutely hole-doped, which decreases the Fermi level density of states and will provide some stabilization. In this scenario, electron doping will increase the Fermi level density of states and the superconducting critical temperature. Vibrational properties are presented, and enough coupling to the C-Ni-C stretch mode at 70 meV is obtained to imply that superconductivity is electron-phonon mediated.
The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituents of this Schottky heterointerface, and determine their momentum-dependent interfacial band offset as well as the band-bending profile into GaN. We find, in particular, that the Fermi states in NbN are aligned against the band gap in GaN, which excludes any significant electronic cross-talk of the superconducting states in NbN through the interface to GaN. We support the experimental findings with first-principles calculations for bulk NbN and GaN. The Schottky barrier height obtained from photoemission is corroborated by electronic transport and optical measurements. The momentum-resolved understanding of electronic properties elucidated by the combined materials advances and experimental methods in our work opens up new possibilities in systems where interfacial states play a defining role.
Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3.
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