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Register a new userGrowth and anisotropy evaluation of NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals
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NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals were successfully grown using a CsCl/KCl flux for the first time. The obtained crystals had a well-developed habit parallel to the c-plane with a typical width of 1-2 mm and thickness of 10-40 um. The superconducting transition temperatures with zero resistivity of NbBiS$_3$ single crystals obtained from the nominal composition of Nb0.9Bi1.2S3 was 0.31 K, and that value of the NbBiSe$_3$ single crystals grown from the stoichiometry composition (NbBiSe$_3$) was 2.3 K. Sharp decreases in electric resistivity and magnetic susceptibility at approximately 3 K suggested a possible superconducting transition temperature of NbBiSe$_3$. The normal-state anisotropy values of grown NbBiS$_3$ and NbBiSe$_3$ single crystals were 2.2-2.4 and 1.5-1.6, respectively.
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We report flux free growth of superconducting FeSe single crystals by an easy and versatile high temperature melt and slow cooling method for first time. The room temperature XRD on the surface of the piece of such obtained crystals showed single 101 plane of Beta-FeSe tetragonal phase. The bulk powder XRD, being obtained by crushing the part of crystal chunk showed majority tetragonal and minority FeSe hexagonal crystalline phases. Detailed HRTEM images along with SAED (selected area electron diffraction) showed the abundance of both majority and minority FeSe phases. Both transport (RT) and magnetization (MT) exhibited superconductivity at below around 10K. Interestingly, the magnetization signal of these crystals is dominated by the magnetism of minority magnetic phase, and hence the isothermal magnetization (MH) at 4K was seen to be ferromagnetic (FM) like. Transport (R-T) measurements under magnetic field showed superconductivity onset at below 12K, and R = 0 (Tc) at 9K. Superconducting transition temperature (Tc) decreases with applied field to around 6K at 7Tesla, with dTc/dH of 0.4K/Tesla, giving rise to an Hc2 value of around 50 Tesla, 30 Tesla and 20 Tesla for Rn = 90, 50 and 10 percent respectively. FeSe single crystal activation energy is calculated from Thermally Activated Flux Flow (TAFF) model which is found to decreases with field.
F-substituted LaOBiSe2 single crystals were grown using CsCl flux. The obtained single crystals showed a plate-like shape with a size of about 1.0 mm square. The c-axis lattice constant of the grown crystals was determined to be 14.114(3) {AA}. The superconducting critical temperature of the single crystal was approximately 3.5 K. The superconducting anisotropies were determined to be 49 and 24 using the upper critical field and the effective mass model, respectively.
BiCh2-based superconductors (Ch: S, Se) are a new series of layered superconductor. However, mechanisms for the emergence of superconductivity in BiCh2-based superconductors have not been clarified. In this study, we have investigated crystal structure of two series of optimally-doped BiCh2-based superconductors, Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2, using powder synchrotron x-ray diffraction in order to reveal the relationship between crystal structure and superconducting properties of the BiCh2-based family. We have found that an enhancement of in-plane chemical pressure would commonly induce bulk superconductivity in both systems. Furthermore, we have revealed that superconducting transition temperature for REO0.5F0.5BiCh2 superconductors could universally be determined by degree of in-plane chemical pressure.
Ce(O,F)Sb(S,Se)2 single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1-2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)2 crystallizes in a monoclinic space group, P21/m, with lattice parameters of a = 4.121(7) A, b = 4.109(7) A, c = 13.233(15) A, beta = 97.94(7) deg. It is composed of alternate stacking of Ce-(O,F) and Sb-SSe layers, and the Sb-SSe layer includes selective occupation of Se atoms in its in-plane site. The valence state of Ce is estimated to be Ce3+ by X-ray absorption fine spectroscopy analysis. The single crystals show an insulating behavior, and a magnetic ordering around 6 K.
Here we report the growth of sub-millimeter MgB2 single crystals of various shapes under high pressure in Mg-B-N system. Structure refinement using a single-crystal X-ray diffraction analysis gives lattice parameters a=3.0851(5) A and c=3.5201(5) A with small reliability factors (Rw =0.025, R=0.018), which enables us to analyze the Fourier and Fourier difference maps. The maps clearly show the B sp2 orbitals and covalency of the B-B bonds. The sharp superconducting transitions at Tc =38.1-38.3K were obtained in both magnetization (DTc =0.6K) and resistivity (DTc <0.3K) measurements. Resistivity measurements with magnetic fields applied parallel and perpendicular to the Mg and B sheets reveal the anisotropic nature of this compound, with upper critical field anisotropy ratio of about 2.7.
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