Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userObservation of giant and tuneable thermal diffusivity of Dirac fluid at room temperature
133
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Conducting materials typically exhibit either diffusive or ballistic charge transport. However, when electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges (1-13). More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge (14-22). Here we observe heat transport in graphene in the diffusive and hydrodynamic regimes, and report a controllable transition to the Dirac-fluid regime at room temperature, using carrier temperature and carrier density as control knobs. We introduce the technique of spatiotemporal thermoelectric microscopy with femtosecond temporal and nanometre spatial resolution, which allows for tracking electronic heat spreading. In the diffusive regime, we find a thermal diffusivity of $sim$2,000 cm$^2$/s, consistent with charge transport. Remarkably, during the hydrodynamic time window before momentum relaxation, we observe heat spreading corresponding to a giant diffusivity up to 70,000 cm$^2$/Vs, indicative of a Dirac fluid. These results are promising for applications such as nanoscale thermal management.
rate research
Read More
Materials with negative thermal expansion (NTE), which contract upon heating, are of great interest both technically and fundamentally. Here, we report giant NTE covering room temperature in mechanically milled antiperovksite GaNxMn3 compounds. The micrograin GaNxMn3 exhibits a large volume contraction at the antiferromagnetic (AFM) to paramagnetic (PM) (AFM-PM) transition within a temperature window ({Delta}T) of only a few kelvins. The grain size reduces to ~ 30 nm after slight milling, while {Delta}T is broadened to 50K. The corresponding coefficient of linear thermal expansion ({alpha}) reaches ~ -70 ppm/K, which is almost two times larger than those obtained in chemically doped antiperovskite compounds. Further reducing grain size to ~ 10 nm, {Delta}T exceeds 100 K and {alpha} remains as large as -30 ppm/K (-21 ppm/K) for x = 1.0 (x = 0.9). Excess atomic displacements together with the reduced structural coherence, revealed by high-energy X-ray pair distribution functions, are suggested to delay the AFM-PM transition. By controlling the grain size via mechanically alloying or grinding, giant NTE may also be achievable in other materials with large lattice contraction due to electronic or magnetic phase transitions.
We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $tau_s$ scales inversely with the mobility $mu$ of BLG samples both at room temperature and at low temperature. This indicates the importance of Dyakonov - Perel spin scattering in BLG. Spin relaxation times of up to 2 ns are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of Dyakonov-Perel spin scattering in BLG. In comparison to SLG, significant changes in the density dependence of $tau_s$ are observed as a function of temperature.
The electron-hole plasma in charge-neutral graphene is predicted to realize a quantum critical system whose transport features a universal hydrodynamic description, even at room temperature. This quantum critical Dirac fluid is expected to have a shear viscosity close to a minimum bound, with an inter-particle scattering rate saturating at the Planckian time $hbar/(k_B T)$. While electrical transport measurements at finite carrier density are consistent with hydrodynamic electron flow in graphene, a smoking gun of viscous behavior remains elusive. In this work, we directly image viscous Dirac fluid flow in graphene at room temperature via measurement of the associated stray magnetic field. Nanoscale magnetic imaging is performed using quantum spin magnetometers realized with nitrogen vacancy (NV) centers in diamond. Scanning single-spin and wide-field magnetometry reveals a parabolic Poiseuille profile for electron flow in a graphene channel near the charge neutrality point, establishing the viscous transport of the Dirac fluid. This measurement is in contrast to the conventional uniform flow profile imaged in an Ohmic conductor. Via combined imaging-transport measurements, we obtain viscosity and scattering rates, and observe that these quantities are comparable to the universal values expected at quantum criticality. This finding establishes a nearly-ideal electron fluid in neutral graphene at room temperature. Our results pave the way to study hydrodynamic transport in quantum critical fluids relevant to strongly-correlated electrons in high-$T_c$ superconductors. This work also highlights the capability of quantum spin magnetometers to probe correlated-electronic phenomena at the nanoscale.
We observe the inverse spin Hall effect in a two-dimensional electron gas confined in AlGaAs/InGaAs quantum wells. Specifically, we find that an inhomogeneous spin density induced by the optical injection gives rise an electric current transverse to both the spin polarization and its gradient. The spin Hall conductivity can be inferred from such a measurement through the Einstein relation and the Onsager relation, and is found to have the order of magnitude of $0.5(e^{2}/h)$. The observation is made at the room temperature and in samples with macroscopic sizes, suggesting that the inverse spin Hall effect is a robust macroscopic transport phenomenon.
We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
