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Register a new userObservation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature
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Added by
Barbaros \\\"Ozyilmaz
Publication date
2010
fields
Physics
and research's language is
English
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We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $tau_s$ scales inversely with the mobility $mu$ of BLG samples both at room temperature and at low temperature. This indicates the importance of Dyakonov - Perel spin scattering in BLG. Spin relaxation times of up to 2 ns are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of Dyakonov-Perel spin scattering in BLG. In comparison to SLG, significant changes in the density dependence of $tau_s$ are observed as a function of temperature.
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We present inverted spin-valves fabricated from CVD-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the art bilayer graphene spin-valves. This is made possible by a PDMS droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate-dependent Hanle measurements show spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 $mu$m at room temperature combined with a charge carrier mobility of $approx$ 24 000 cm$^{2}$(Vs)$^{-1}$ for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-graphene and even exfoliated single-layer graphene.
Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfacing graphene with a semiconducting transition metal dechalcogenide, such as tungsten disulphide (WS$_2$). Signatures of such an enhancement have recently been reported but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and WS$_2$. By using out-of-plane spin precession, we show that the spin lifetime is largest when the spins point out of the graphene plane. Moreover, we observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, indicating that the strong spin-valley coupling in WS$_2$ is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials.
Long spin relaxation times are a prerequisite for the use of spins in data storage or nanospintronics technologies. An atomic-scale solid-state realization of such a system is the spin of a transition metal atom adsorbed on a suitable substrate. For the case of a metallic substrate, which enables directly addressing the spin by conduction electrons, the experimentally measured lifetimes reported to date are on the order of only hundreds of femtoseconds. Here, we show that the spin states of iron atoms adsorbed directly on a conductive platinum substrate have an astonishingly long spin relaxation time in the nanosecond regime, which is comparable to that of a transition metal atom decoupled from the substrate electrons by a thin decoupling layer. The combination of long spin relaxation times and strong coupling to conduction electrons implies the possibility to use flexible coupling schemes in order to process the spin-information.
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.
Inverse spin Hall effect (ISHE) allows the conversion of pure spin current into charge current in nonmagnetic materials (NM) due to spin-orbit interaction (SOI). In ferromagnetic materials (FM), SOI is known to contribute to anomalous Hall effect (AHE), anisotropic magnetoresistance (AMR), and other spin-dependent transport phenomena. However, SOI in FM has been ignored in ISHE studies in spintronic devices, and the possibility of self-induced ISHE in FM has never been explored until now. In this paper, we demonstrate the experimental verification of ISHE in FM. We found that the spin-pumping-induced spin current in permalloy (Py) film generates a transverse electromotive force (EMF) in the film itself, which results from the coupling of spin current and SOI in Py. The control experiments ruled out spin rectification effect and anomalous Nernst effect as the origin of the EMF.
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