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We discuss the magnetic and topological properties of bulk crystals and quasi-two-dimensional thin films formed by stacking intrinsic magnetized topological insulator ( for example Mn(Sb$_{x}$Bi$_{1-x}$)$_2$X$_4$ with X = Se,Te, including MnBi$_2$Te$_4$) septuple layers and topological insulator quintuple layers in arbitrary order. Our analysis makes use of a simplified model that retains only Dirac-cone degrees of freedom on both surfaces of each septuple or quintuple layer. We demonstrate the models applicability and estimate its parameters by comparing with {it ab initio } density-functional-theory(DFT) calculations. We then employ the coupled Dirac cone model to provide an explanation for the dependence of thin-film properties, particularly the presence or absence of the quantum anomalous Hall effect, on film thickness, magnetic configuration, and stacking arrangement, and to comment on the design of Weyl superlattices.
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Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high-performance pure spin current source with a large spin Hall angle and high electrical conductivity, which can be fabricated by a mass production technique. In this work, we demonstrate ultrahigh efficient and robust SOT magnetization switching in all-sputtered BiSb topological insulator - perpendicularly magnetized Co/Pt multilayers. Despite fabricated by the industry-friendly magnetron sputtering instead of the laboratory molecular beam epitaxy, the topological insulator layer, BiSb, shows a large spin Hall angle of $theta$$_{SH}$ = 12.3 and high electrical conductivity of $sigma$ = 1.5x$10^5$ $Omega^{-1}$m$^{-1}$. Our results demonstrate the mass production capability of BiSb topological insulator for implementation of ultralow power SOT-MRAM and other SOT-based spintronic devices.
Topological insulators are expected to be a promising platform for novel quantum phenomena, whose experimental realizations require sophisticated devices. In this Technical Review, we discuss four topics of particular interest for TI devices: topological superconductivity, quantum anomalous Hall insulator as a platform for exotic phenomena, spintronic functionalities, and topological mesoscopic physics. We also discuss the present status and technical challenges in TI device fabrications to address new physics.
An interface electron state at the junction between a three-dimensional topological insulator (TI) film of Bi2Se3 and a ferrimagnetic insulator film of Y3Fe5O12 (YIG) was investigated by measurements of angle-resolved photoelectron spectroscopy and X-ray absorption magnetic circular dichroism (XMCD). The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ state in the YIG film were confirmed. The proximity effect is likely described in terms of the exchange interaction between the localized Fe 3d electrons in the YIG film and delocalized electrons of the surface and bulk states in the Bi2Se3 film. The Curie temperature (TC) may be increased by reducing the amount of the interface Fe2+ ions with opposite spin direction observable as a pre-edge in the XMCD spectra.
Exploration of novel electromagnetic phenomena is a subject of great interest in topological quantum materials. One of the unprecedented effects to be experimentally verified is topological magnetoelectric (TME) effect originating from an unusual coupling of electric and magnetic fields in materials. A magnetic heterostructure of topological insulator (TI) hosts such an exotic magnetoelectric coupling and can be expected to realize the TME effect as an axion insulator. Here we designed a magnetic TI with tricolor structure where a non-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagnetic Cr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3. Accompanied by the quantum anomalous Hall (QAH) effect, we observe zero Hall conductivity plateaus, which are a hallmark of the axion insulator state, in a wide range of magnetic field between the coercive fields of Cr- and V-doped layers. The resistance of the axion insulator state reaches as high as 10^9 ohm, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% upon the transition from the QAH state. The tricolor structure of TI may not only be an ideal arena for the topologically distinct phenomena, but also provide magnetoresistive applications for advancing dissipationless topological electronics.
Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI materials is important if these states are to become useful in new technologies, or as a venue for exotic physics. Unfortunately, chemical potential tuning is challenging in TIs in part because the fabrication of electrostatic top-gates tends to degrade material properties and the addition of chemical dopants or adsorbates can cause unwanted disorder. Here, we present an all-optical technique which allows persistent, bidirectional gating of a (Bi,Sb)2Te3 channel by optically manipulating the distribution of electric charge below its interface with an insulating SrTiO3 substrate. In this fashion we optically pattern p-n junctions in a TI material, which we subsequently image using scanning photocurrent microscopy. The ability to dynamically write and re-write mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The optical gating effect may be adaptable to other material systems, providing a more general mechanism for reconfigurable electronics.
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