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Register a new userOptical properties of the infinite-layer La$_{1-x}$Sr$_{x}$NiO$_{2}$ and hidden Hunds physics
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We investigate the optical properties of the normal state of the infinite-layer La$_{1-x}$Sr$_x$NiO$_2$ using DFT+DMFT. We find a correlated metal which exhibits substantial transfer of spectral weight to high energies relative to the density functional theory. The correlations are not due to Mott physics, which would suppress the charge fluctuations and integrated optical spectral weight as we approach a putative insulating state. Instead we find the unusual situation, that the integrated optical spectral weight {it decreases} with doping and {it increases } with increasing temperature. We contrast this with the coherent component of the optical conductivity, which {it decreases} with increasing temperature as a result of a coherence$-$incoherence crossover. Our optical studies support a picture of a Hunds metallic state, where dynamical orbital fluctuations are visible at intermediate energies, even if at low energies the Fermi surface has primarily $d_{x^2 - y^2}$ character and we propose a low-energy two-band model with atom centered $e_g$ states.
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Ordering process of stripe order in La{2-x}Sr{x}NiO{4} with x being around 1/3 was investigated by neutron diffraction experiments. When the stripe order is formed at high temperature, incommensurability epsilon of the stripe order has a tendency to show the value close to 1/3 for the samples with x at both sides of 1/3. With decreasing temperature, however, epsilon becomes close to the value determined by the linear relation of epsilon = n_h, where n_h is a hole concentration. This variation of the epsilon strongly affects the character of the stripe order through the change of the carrier densities in stripes and antiferromagnetic domains.
The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the limit of La substitution (x~0.06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent states long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and differences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.
We use angle-resolved photoemission spectroscopy to study the doping evolution of infinite-layer Sr$_{1-x}$La$_{x}$CuO$_{2}$ thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of the superconducting cuprate parent compounds. As carriers are added to the system, a continuous evolution from charge-transfer insulator to superconductor is observed, with the initial lower Hubbard band pinned well below the Fermi level and the development of a coherent low-energy band with electron doping. This two-component spectral function emphasizes the important role that strong local correlations play even at relatively high doping levels. Electron diffraction probes reveal a ${p(2times2)}$ surface reconstruction of the material at low doping levels. Using a number of simple assumptions, we develop a model of this reconstruction based on the polar nature of the infinite-layer structure. Finally, we provide evidence for a thickness-controlled transition in ultrathin films of SrCuO$_2$ grown on nonpolar SrTiO$_3$, highlighting the diverse structural changes that can occur in polar complex oxide thin films.
Due to the orthorhombic distortion of the lattice, the electronic hopping integrals along the $a$ and $b$ diagonals, the orthorhombic directions, are slightly different. We calculate their difference in the LDA and find $t_{a}^{prime}-t_{b}^{prime}approx 8 $meV. We argue that electron correlations in the insulating phase of La$_{2-x}$Sr$_{x}$CuO$_{4}$, i. e. at doping $xleq 0.055,$ dramatically enhance the $(t_{a}^{prime}-t_{b}^{prime}) $-splitting between the $a$- and $b$-hole valleys. In particular, we predict that the intensity of both angle-resolved photoemission and of optical absorption is very different for the $a$ and $b$ nodal points.
We have performed a temperature-dependent angle-integrated photoemission study of lightly-doped to heavily-overdoped La$_{2-x}$Sr$_{x}$CuO$_4$ and oxygen-doped La$_2$CuO$_{4.10}$. We found that both the magnitude $Delta$* of the (small) pseudogap and the temperature textit{T}* at which the pseudogap is opened increases with decreasing hole concentration, consistent with previous studies. On the other hand, the superconducting gap $Delta_{sc}$ was found to remain small for decreasing hole concentration. The results can be explained if the superconducting gap opens only on the Fermi arc around the nodal (0,0)-($pi,pi$) direction while the pseudogap opens around $sim$($pi$, 0).
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