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Register a new userCharacterization of New Silicon Photomultipliers with Low Dark Noise at Low Temperature
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Silicon photomultipliers (SiPMs) have a low radioactivity, compact geometry, low operation voltage, and reasonable photo-detection efficiency for vacuum ultraviolet light (VUV). Therefore it has the potential to replace photomultiplier tubes (PMTs) for future dark matter experiments with liquid xenon (LXe). However, SiPMs have nearly two orders of magnitude higher dark count rate (DCR) compared to that of PMTs at the LXe temperature ($sim$ 165 K). This type of high DCR mainly originates from the carriers that are generated by band-to-band tunneling effect. To suppress the tunneling effect, we have developed a new SiPM with lowered electric field strength in cooperation with Hamamatsu Photonics K. K. and characterized its performance in a temperature range of 153 K to 298 K. We demonstrated that the newly developed SiPMs had 6--54 times lower DCR at low temperatures compared to that of the conventional SiPMs.
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Silicon Photomultipliers (SiPMs) are attractive candidates for light detectors for next generation liquid xenon double-beta decay experiments, like nEXO. In this paper we discuss the requirements that the SiPMs must satisfy in order to be suitable for nEXO and similar experiments, describe the two test setups operated by the nEXO collaboration, and present the results of characterization of SiPMs from several vendors. In particular, we find that the photon detection efficiency at the peak of xenon scintillation light emission (175-178 nm) approaches the nEXO requirements for tested FBK and Hamamatsu devices. Additionally, the nEXO collaboration performed radioassay of several grams of bare FBK devices using neutron activation analysis, indicating levels of 40K, 232Th, and 238U of the order of <0.15, (6.9e10-4 - 1.3e10-2), and <0.11 mBq/kg, respectively.
Novel generation of silicon-based photodetectors are attractive alternatives to the traditional phototubes. They offer significant advantages but they present new challenges too. Presence of afterpulses may affect many characteristics of the photodetectors. Simple statistical model of afterpulsing is used to evaluate the contribution to the observed dark count rates, to examine the contribution to the pulse height resolution and to demonstrate the modification of the observed timing properties of the SiPMs.
Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in a vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 nm to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of a FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.
A novel photon detector, the Silicon Photomultiplier (SiPM), has been tested in proximity focusing Ring Imaging Cherenkov (RICH) counters that were exposed to cosmic-ray particles in Ljubljana, and a 2 GeV electron beam at the KEK research facility. This type of RICH detector is a candidate for the particle identification detector upgrade of the BELLE detector at the KEK B-factory, for which the use of SiPMs, microchannel plate photomultiplier tubes or hybrid avalanche photodetectors, rather than traditional Photomultiplier Tubes (PMTs) is essential due to the presence of high magnetic fields. In both experiments, SiPMs are found to compare favourably with PMTs, with higher photon detection rates per unit area. Through the use of hemispherical and truncated pyramid light guides to concentrate photons onto the active surface area, the light yield increases significantly. An estimate of the contribution to dark noise from false coincidences between SiPMs in an array is also presented.
This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.
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