No Arabic abstract
We report the observation of a large anisotropic topological Hall effect (THE) in the hexagonal non-collinear magnet Fe5Sn3 single crystals. It is found that the sign of the topological Hall resistivity is negative when a magnetic field H perpendicular to the bc-plane (Hperp bc-plane), however, it changes form negative to positive when H parallel to the c-axis (Hparallel c-axis). The value of topological Hall resistivity increased with the increasing temperature and reached approximately -2.12 muOmega cm (Hperp bc-plane) and 0.5 muOmega cm (Hparallel c-axis) at 350 K, respectively. Quantitative analyses of the measured data suggest that the observed anisotropic THE may originate from the opposite scalar spin chirality induced by the magnetic fields perpendicular and parallel to the c-axis, respectively.
The planar topological Hall effect (PTHE), appeared when the magnetic field tended to be along the current, is believed to result from the real-space Berry curvature of the spin spiral structure and has been experimentally observed in skyrmion-hosting materials. In this paper, we report an experimental observation of the PTHE in a hexagonal ferromagnetic Fe5Sn3 single crystal. With a current along the c axis of Fe5Sn3, the transverse resistivity curves exhibited obvious peaks near the saturation field as the magnetic field rotated to the current and appeared more obvious with increasing temperature, which was related to the noncoplanar spin structure in Fe5Sn3. This spin structure induced nonzero scalar spin chirality, which acted as fictitious magnetic fields to conduction electrons and contributed the additional transverse signal. These findings deepen the understanding of the interaction between conduction electrons and complex magnetic structures and are instructive for the design of next-generation spintronic devices.
In this paper, we report an experimental observation of the large anomalous Hall effect (AHE) in a hexagonal ferromagnetic Fe5Sn3 single crystal with current along the b axis and a magnetic field normal to the bc plane. The intrinsic contribution of the anomalous Hall conductance sigma_AH^int was approximately 613 {Omega}-1 cm-1, which was more than 3 times the maximum value in the frustrated kagome magnet Fe3Sn2 and nearly independent of the temperature over a wide range between 5 and 350 K. The analysis results revealed that the large AHE was dominated by a common, intrinsic term, while the extrinsic contribution, i.e., the skew scattering and side jump, turned out to be small. In addition to the large AHE, it was found the types of majority carriers changed at approximately 275 and 30 K, consistent with the critical temperatures of the spin reorientation. These findings suggest that the hexagonal ferromagnetic Fe5Sn3 single crystal is an excellent candidate to use for the study of the topological features in ferromagnets.
We report on the observation of a large topological Hall effect (THE) over a wide temperature region in a geometrically frustrated Fe3Sn2 magnet with a kagome-bilayer structure. We found that the magnitude of the THE resistivity increases with temperature and reaches -0.875 {mu}{Omega}.cm at 380 K. Moreover, the critical magnetic fields with the change of THE are consistent with the magnetic structure transformation, which indicates that the real-space fictitious magnetic field is proportional to the formation of magnetic skyrmions in Fe3Sn2. The results strongly suggest that the large THE originates from the topological magnetic spin textures and may open up further research opportunities in exploring emergent phenomena in kagome materials.
CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high N{e}el temperature $sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer topological insulator thin films using emph{ab initio} density functional theory. We find that the intrinsic parts of the total anomalous Hall conductivities of the thin films are non-zero, and approximately quantized. The N{e}el temperature of CrSb bilayers on few-layer topological insulator thin films is found to be approximately two times larger than that of an isolated CrSb thin film. Due to the low Fermi level density of states of CrSb, Hall quantization might be achievable by introducing disorder. CrSb bilayers on topological insulator surfaces are therefore attractive candidates for high-temperature quantum anomalous Hall effects.
Magnetic Weyl semimetals attract considerable interest not only for their topological quantum phenomena but also as an emerging materials class for realizing quantum anomalous Hall effect in the two-dimensional limit. A shandite compound Co3Sn2S2 with layered Kagome-lattices is one such material, where vigorous efforts have been devoted to synthesize the two-dimensional crystal. Here we report a synthesis of Co3Sn2S2 thin flakes with a thickness of 250 nm by chemical vapor transport method. We find that this facile bottom-up approach allows the formation of large-sized Co3Sn2S2 thin flakes of high-quality, where we identify the largest electron mobility (~2,600 cm2V-1s-1) among magnetic topological semimetals, as well as the large anomalous Hall conductivity (~1,400 {Omega}-1cm-1) and anomalous Hall angle (~32 %) arising from the Berry curvature. Our study provides a viable platform for studying high-quality thin flakes of magnetic Weyl semimetal and stimulate further research on unexplored topological phenomena in the two-dimensional limit.