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Register a new userEffect of interfacial oxidation layer in spin pumping experiments on Ni$_{80}$Fe$_{20}$/SrIrO$_3$ heterostructures
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SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer on spin pumping experiments in Ni$_{80}$Fe$_{20}$ (NiFe)/SrIrO$_3$ bilayer heterostructures. To investigate this scenario we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which allowed us to simultaneously study dynamic spin pumping properties (Gilbert damping) and static magnetic properties (such as the effective magnetization and magnetic anisotropy). The results for NiFe/SrIrO$_3$ bilayer thin films were analyzed and compared to those from a NiFe/NbN/SrIrO$_3$ trilayer reference sample, where a spin-transparent, ultra-thin NbN layer was inserted to prevent oxidation of NiFe. At low temperatures, we observe substantial differences in the magnetization dynamics parameters of these samples, which can be explained by an antiferromagnetic interfacial layer in the NiFe/SrIrO$_3$ bilayers.
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Perovskite SrRuO$_3$ is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report synthesis and investigation of atomically flat artificial multilayers of SrRuO$_3$ with the spin-orbit semimetal SrIrO$_3$ in combination with band-structure calculations with a Hubbard $U$ term and topological analysis. They reveal an electronic reconstruction and emergence of flat Ru-4d$_{xz}$ bands near the interface, ferromagnetic interlayer coupling and negative Berry-curvature contribution to the anomalous Hall effect. We analyze the Hall effect and magnetoresistance measurements as a function of the field angle from out of plane towards in-plane orientation (either parallel or perpendicular to the current direction) by a two-channel model. The magnetic easy direction is tilted by about $20^circ$ from the sample normal for low magnetic fields, rotating towards the out-of-plane direction by increasing fields. Fully strained epitaxial growth enables a strong anisotropy of magnetoresistance. An additional Hall effect contribution, not accounted for by the two-channel model is compatible with stable skyrmions only up to a critical angle of roughly $45^circ$ from the sample normal. Within about $20^circ$ from the thin film plane an additional peak-like contribution to the Hall effect suggests the formation of a non-trivial spin structure.
The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization precession in the ferrimagnetic insulator YIG film a spin-polarized electron current is injected into the Pt layer. This spin current is transformed into electrical charge current by means of the ISHE. An increase of the ISHE-voltage with increasing film thickness is observed and compared to the theoretically expected behavior. The effective damping parameter of the YIG/Pt samples is found to be enhanced with decreasing YIG film thickness. The investigated samples exhibit a spin mixing conductance of g=(7.43 pm 0.36) times 10^{18} m^{-2} and a spin Hall angle of theta_{ISHE} = 0.009 pm 0.0008. Furthermore, the influence of nonlinear effects on the generated voltage and on the Gilbert damping parameter at high excitation powers are revealed. It is shown that for small YIG film thicknesses a broadening of the linewidth due to nonlinear effects at high excitation powers is suppressed because of a lack of nonlinear multi-magnon scattering channels. We have found that the variation of the spin-pumping efficiency for thick YIG samples exhibiting pronounced nonlinear effects is much smaller than the nonlinear enhancement of the damping.
Artificially fabricated 3$d$/5$d$ superlattices (SLs) involve both strong electron correlation and spin-orbit coupling in one material by means of interfacial 3$d$-5$d$ coupling, whose mechanism remains mostly unexplored. In this work we investigated the mechanism of interfacial coupling in LaMnO$_3$/SrIrO$_3$ SLs by several spectroscopic approaches. Hard x-ray absorption, magnetic circular dichroism and photoemission spectra evidence the systematic change of the Ir ferromagnetism and the electronic structure with the change of the SL repetition period. First-principles calculations further reveal the mechanism of the SL-period dependence of the interfacial electronic structure and the local properties of the Ir moments, confirming that the formation of Ir-Mn molecular orbital is responsible for the interfacial coupling effects. The SL-period dependence of the ratio between spin and orbital components of the Ir magnetic moments can be attributed to the realignment of electron spin during the formation of the interfacial molecular orbital. Our results clarify the nature of interfacial coupling in this prototypical 3$d$/5$d$ SL system and the conclusion will shed light on the study of other strongly correlated and spin-orbit coupled oxide hetero-interfaces.
Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets. We show how spin Hall effects can be quantified by integrating permalloy/normal metal (N) bilayers into a coplanar waveguide. A dc spin current in N can be generated by spin pumping in a controllable way by ferromagnetic resonance. The transverse dc voltage detected along the permalloy/N has contributions from both the anisotropic magnetoresistance (AMR) and the spin Hall effect, which can be distinguished by their symmetries. We developed a theory that accounts for both. In this way, we determine the spin Hall angle quantitatively for Pt, Au and Mo. This approach can readily be adapted to any conducting material with even very small spin Hall angles.
Permalloy Ni$_{80}$Fe$_{20}$ is one of the key magnetic materials in the field of magnonics. Its potential would be further unveiled if it could be deposited in three dimensional (3D) architectures of sizes down to the nanometer. Atomic Layer Deposition, ALD, is the technique of choice for covering arbitrary shapes with homogeneous thin films. Early successes with ferromagnetic materials include nickel and cobalt. Still, challenges in depositing ferromagnetic alloys reside in the synthesis via decomposing the consituent elements at the same temperature and homogeneously. We report plasma-enhanced ALD to prepare permalloy Ni$_{80}$Fe$_{20}$ thin films and nanotubes using nickelocene and iron(III) tert-butoxide as metal precursors, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. We have optimized the ALD cycle in terms of Ni:Fe atomic ratio and functional properties. We obtained a Gilbert damping of 0.013, a resistivity of 28 $muOmega$cm and an anisotropic magnetoresistance effect of 5.6 $%$ in the planar thin film geometry. We demonstrate that the process also works for covering GaAs nanowires, resulting in permalloy nanotubes with high aspect ratios and diameters of about 150 nm. Individual nanotubes were investigated in terms of crystal phase, composition and spin-dynamic response by microfocused Brillouin Light Scattering. Our results enable NiFe-based 3D spintronics and magnonic devices in curved and complex topology operated in the GHz frequency regime.
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