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Register a new userQuantifying spin Hall angles from spin pumping: Experiments and Theory
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Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets. We show how spin Hall effects can be quantified by integrating permalloy/normal metal (N) bilayers into a coplanar waveguide. A dc spin current in N can be generated by spin pumping in a controllable way by ferromagnetic resonance. The transverse dc voltage detected along the permalloy/N has contributions from both the anisotropic magnetoresistance (AMR) and the spin Hall effect, which can be distinguished by their symmetries. We developed a theory that accounts for both. In this way, we determine the spin Hall angle quantitatively for Pt, Au and Mo. This approach can readily be adapted to any conducting material with even very small spin Hall angles.
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Pure spin current based research is mostly focused on ferromagnet (FM)/heavy metal (HM) system. Because of the high spin orbit coupling (SOC) these HMs exhibit short spin diffusion length and therefore possess challenges for device application. Low SOC (elements of light weight) and large spin diffusion length make the organic semiconductors (OSCs) suitable for future spintronic applications. From theoretical model it is explained that, due to $pi$ - $sigma$ hybridization the curvature of the C$_{60}$ molecules may increase the SOC strength. Here, we have investigated spin pumping and inverse spin hall effect (ISHE) in CoFeB/C$_{60}$ bilayer system using coplanar wave guide based ferromagnetic resonance (CPW-FMR) set-up. We have performed angle dependent ISHE measurement to disentangle the spin rectification effects for example anisotropic magnetoresistance, anomalous Hall effect etc. Further, effective spin mixing conductance (g$_{eff}^{uparrowdownarrow}$) and spin Hall angle ($theta_{SH}$) for C$_{60}$ have been reported here. The evaluated value for $theta_{SH}$ is 0.055.
An intriguing feature of spintronics is the use of pure spin-currents to manipulate magnetization, e.g., spin-currents can switch magnetization in spin-torque MRAM, a next-generation DRAM alternative. Giant spin-currents via the spin Hall effect greatly expand the technological opportunities. Conversely, a ferromagnet/normal metal junction emits spin-currents under microwave excitation, i.e. spin-pumping. While such spin-currents are modulated at the excitation frequency, there is also a non-linear, rectified component that is commonly detected using the corresponding inverse spin Hall effect (iSHE) dc voltage. However, the ac component should be more conducive for quantitative analysis, as it is up to two orders of magnitude larger and linear. But any device that uses the ac iSHE is also sensitive to inductive signals via Faradays Law and discrimination of the ac iSHE signal must rely on phase-sensitive measurements. We use the inductive signal as a reference for a quantitative measurement of the magnitude and phase of the ac iSHE.
We have demonstrated spin pumping from a paramagnetic state of an insulator La2NiMnO6 into a Pt film. Single-crystalline films of La2NiMnO6 which exhibit a ferromagnetic order at TC ~ 270 K were grown by pulsed laser deposition. The inverse spin Hall voltage induced by spin-current injection has been observed in the Pt layer not only in the ferromagnetic phase of La2NiMnO6 but also in a wide temperature range above TC. The efficient spin pumping in the paramagnetic phase is ascribable to ferromagnetic correlation, not to ferromagnetic order.
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utilizing angle-dependent and field-dependent magnetotransport measurements as a function of temperature. Applying the established SMR model, we derive and quantify the real and imaginary parts of the complex spin mixing interface conductance. We find that the imaginary part is by one order of magnitude larger than the real part. Both decrease with increasing temperature. This reduction is in agreement with thermal fluctuations in the ferromagnet.
We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.
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