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Register a new userRobust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure
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Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials.
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The interaction between two different materials can present novel phenomena that are quite different from the physical properties observed when each material stands alone. Strong electronic correlations, such as magnetism and superconductivity, can be produced as the result of enhanced Coulomb interactions between electrons. Two-dimensional materials are powerful candidates to search for the novel phenomena because of the easiness of arranging them and modifying their properties accordingly. In this work, we report magnetic effects of graphene, a prototypical non-magnetic two-dimensional semi-metal, in the proximity with sulfur, a diamagnetic insulator. In contrast to the well-defined metallic behaviour of clean graphene, an energy gap develops at the Fermi energy for the graphene/sulfur compound with decreasing temperature. This is accompanied by a steep increase of the resistance, a sign change of the slope in the magneto-resistance between high and low fields, and magnetic hysteresis. A possible origin of the observed electronic and magnetic responses is discussed in terms of the onset of low-temperature magnetic ordering. These results provide intriguing insights on the search for novel quantum phases in graphene-based compounds.
Recent experiments on layered {alpha}-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders {alpha}-In2Se3 an excellent platform for developing two-dimensional (2D) layered-material based electronics with nonvolatile functionality. In this letter, we demonstrate non-volatile memory effect in a hybrid 2D ferroelectric field effect transistor (FeFET) made of ultrathin {alpha}-In2Se3 and graphene. The resistance of graphene channel in the FeFET is tunable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric {alpha}-In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top-gate ferroelectric. The 2D FeFET can be randomly re-written over more than $10^5$ cycles without losing the non-volatility. Our approach demonstrates a protype of re-writable non-volatile memory with ferroelectricity in van de Waals 2D materials.
We theoretically study magnetoelectric effects in a heterostructure of a generic band insulator and a ferromagnet. In contrast to the kinetic magnetoelectric effect in metals, referred to as the Edelstein effect or the inverse spin galvanic effect, our mechanism relies on virtual interband transitions between the valence and conduction bands and therefore immune to disorder or impurity scattering. By calculating electric field-induced magnetization by the linear response theory, we reveal that the magnetoelectric effect shows up without specific parameter choices. The magnetoelectric effect qualitatively varies by changing the direction of the magnetic moment in the ferromagnet: the response is diagonal for the out-of-plane moment, whereas it is off-diagonal for the inplane moment. We also find out that in optical frequencies, the magnetoelectric signal can be drastically enhanced via interband resonant excitations. Finally, we estimate the magnitude of the magnetoelectric effect for a hybrid halide perovskite semiconductor as an example of the band insulator and compare it with other magnetoelectric materials. We underscore that our mechanism is quite general and widely expectable, only requiring the Rashba spin-orbit coupling and exchange coupling. Our result could potentially offer a promising method of Joule heating-free electric manipulation of magnetic moments in spintronic devices.
We report the magnetic entropy change (Delta Sm) in magnetoelectric Eu1-xBaxTiO3 for x = 0.1- 0.9. We find - delta Sm = 11 (40) J/kg.K in x = 0.1 for a field change of 1 (5) Tesla respectively, which is the largest value among all Eu-based oxides. Delta Sm arises from the field-induced suppression of the spin entropy of Eu2+:4f7 localized moments. While -delta Sm decreases with increasing x, -DeltaSm = 6.58 J/kg.K observed in the high spin diluted composition x = 0.9 is larger than that in many manganites. Our results indicate that these magnetoelectrics are potential candidates for cryogenic magnetic refrigeration.
Violation of time reversal and spatial inversion symmetries has profound consequences for elementary particles and cosmology. Spontaneous breaking of these symmetries at phase transitions gives rise to unconventional physical phenomena in condensed matter systems, such as ferroelectricity induced by magnetic spirals, electromagnons, non-reciprocal propagation of light and spin waves, and the linear magnetoelectric (ME) effect - the electric polarization proportional to the applied magnetic field and the magnetization induced by the electric field. Here, we report the experimental study of the holmium-doped langasite, Ho$_{x}$La$_{3-x}$Ga$_5$SiO$_{14}$, showing a puzzling combination of linear and highly non-linear ME responses in the disordered paramagnetic state: its electric polarization grows linearly with the magnetic field but oscillates many times upon rotation of the magnetic field vector. We propose a simple phenomenological Hamiltonian describing this unusual behavior and derive it microscopically using the coupling of magnetic multipoles of the rare-earth ions to the electric field.
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