No Arabic abstract
Controlling the thermal conductivity of semiconductors is of practical interest in optimizing the performance of thermoelectric and phononic devices. The insertion of inclusions of nanometer size in a semiconductor is an effective means of achieving such control; it has been proposed that the thermal conductivity of silicon could be reduced to 1 W/m/K using this approach and that a minimum in the heat conductivity would be reached for some optimal size of the inclusions. Yet the practical verification of this design rule has been limited. In this work, we address this question by studying the thermal properties of silicon metalattices that consist of a periodic distribution of spherical inclusions with radii from 7 to 30 nm, embedded into silicon. Experimental measurements confirm that the thermal conductivity of silicon metalattices is as low as 1 W/m/K for silica inclusions, and that this value can be further reduced to 0.16 W/m/K for silicon metalattices with empty pores. A detailed model of ballistic phonon transport suggests that this thermal conductivity is close to the lowest achievable by tuning the radius and spacing of the periodic inhomogeneities. This study is a significant step in elucidating the scaling laws that dictate ballistic heat transport at the nanoscale in silicon and other semiconductors.
We studied the thermal conductivity of graphene phononic crystal (GPnC), also named as graphene nanomesh, by molecular dynamics simulations. The dependences of thermal conductivity of GPnCs on both length and temperature are investigated. It is found that the thermal conductivity of GPnCs is significantly lower than that of graphene and can be efficiently tuned by changing the porosity and period length. For example, the ratio of thermal conductivity of GPnC to thermal conductivity of graphene can be changed from 0.1 to 0.01 when the porosity is changed from about 21% to 65%. The phonon participation ratio spectra reveal that more phonon modes are localized in GPnCs with larger porosity. Our results suggest that creating GPnCs is a valuable method to efficiently manipulate the thermal conductivity of graphene.
Water mediates electrostatic interactions via the orientation of its dipoles around ions, molecules, and interfaces. This induced water polarization consequently influences multiple phenomena. In particular, water polarization modulated by nanoconfinement affects ion adsorption and transport, biomolecular self-assembly, and surface chemical reactions. Therefore, it is of paramount importance to understand how water-mediated interactions change at the nanoscale. Here we show that near the graphene surface anion-cation interactions do not obey the translational and isotropic symmetries of Coulombs law. We identify a new property, referred to as non-reciprocity, which describes the non-equivalent and directional interaction between two oppositely charged ions near the confining surface when their positions with respect to the interface are exchanged. Specifically, upon exchange of the two ions positions along the surface normal direction the interaction energy changes by about 5$k_BT$. In both cases, confinement enhances the attraction between two oppositely charged ions near the graphene surface, while intercalation of one ion into the graphene layers shifts the interaction to repulsive. While the water permittivity in confinement is different from that in bulk, the effects observed here via molecular dynamics simulations and X-ray reflectivity experiments cannot be accounted for by current permittivity models. Our work shows that the water structure is not enough to infer electrostatic interactions near interfaces.
We report a study of magnetism and magnetic transitions of hexagonal ErMnO$_3$ single crystals by magnetization, specific heat and heat transport measurements. Magnetization data show that the $c$-axis magnetic field induces three magnetic transitions at 0.8, 12 and 28 T. The specific heat shows a peak at 2.2 K, which is due to a magnetic transition of Er$^{3+}$ moments. For low-$T$ thermal conductivity ($kappa$), a clear dip-like feature appears in $kappa(H)$ isotherm at 1--1.25 T for $H parallel ab$; while in the case of $H parallel c$, a step-like increase is observed at 0.5--0.8 T. The transition fields in $kappa(H)$ are in good agreement with those obtained from magnetization, and the anomaly of $kappa$ can be understood by a spin-phonon scattering scenario. The natures of magnetic structures and corresponding field-induced transitions at low temperatures are discussed.
Transmission electron microscopy, scanning transmission electron tomography, and electron energy loss spectroscopy were used to characterize three-dimensional artificial Si nanostructures called metalattices, focusing on Si metalattices synthesized by high-pressure confined chemical vapor deposition in 30-nm colloidal silica templates with ~7 and ~12 nm meta-atoms and ~2 nm meta-bonds. The meta-atoms closely replicate the shape of the tetrahedral and octahedral interstitial sites of the face-entered cubic colloidal silica template. Composed of either amorphous or nanocrystalline silicon, the metalattice exhibits long-range order and interconnectivity in two-dimensional micrographs and three-dimensional reconstructions. Electron energy loss spectroscopy provides information on local electronic structure. The Si L2,3 core-loss edge is blue-shifted compared to the onset for bulk Si, with the meta-bonds displaying a larger shift (0.55 eV) than the two types of meta-atoms (0.30 and 0.17 eV). Local density of state calculations using an empirical tight binding method are in reasonable agreement.
We present a theoretical analysis of the effect of dielectric confinement on the Coulomb interaction in dielectrically modulated quantum structures. We discuss the implications of the strong enhancement of the electron-hole and electron-electron coupling for two specific examples: (i) GaAs-based quantum wires with remote oxide barriers, where combined quantum and dielectric confinements are predicted to lead to room temperature exciton binding, and (ii) semiconductor quantum dots in colloidal environments, where the many-body ground states and the addition spectra are predicted to be drastically altered by the dielectric environment.