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Register a new userA Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference
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Added by
Arman Kazemi
Publication date
2020
fields
Informatics Engineering
and research's language is
English
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An analog synapse circuit based on ferroelectric-metal field-effect transistors is proposed, that offers 6-bit weight precision. The circuit is comprised of volatile least significant bits (LSBs) used solely during training, and non-volatile most significant bits (MSBs) used for both training and inference. The design works at a 1.8V logic-compatible voltage, provides 10^10 endurance cycles, and requires only 250ps update pulses. A variant of LeNet trained with the proposed synapse achieves 98.2% accuracy on MNIST, which is only 0.4% lower than an ideal implementation of the same network with the same bit precision. Furthermore, the proposed synapse offers improvements of up to 26% in area, 44.8% in leakage power, 16.7% in LSB update pulse duration, and two orders of magnitude in endurance cycles, when compared to state-of-the-art hybrid synaptic circuits. Our proposed synapse can be extended to an 8-bit design, enabling a VGG-like network to achieve 88.8% accuracy on CIFAR-10 (only 0.8% lower than an ideal implementation of the same network).
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This paper presents an implementation of multilayer feed forward neural networks (NN) to optimize CMOS analog circuits. For modeling and design recently neural network computational modules have got acceptance as an unorthodox and useful tool. To achieve high performance of active or passive circuit component neural network can be trained accordingly. A well trained neural network can produce more accurate outcome depending on its learning capability. Neural network model can replace empirical modeling solutions limited by range and accuracy.[2] Neural network models are easy to obtain for new circuits or devices which can replace analytical methods. Numerical modeling methods can also be replaced by neural network model due to their computationally expansive behavior.[2][10][20]. The pro- posed implementation is aimed at reducing resource requirement, without much compromise on the speed. The NN ensures proper functioning by assigning the appropriate inputs, weights, biases, and excitation function of the layer that is currently being computed. The concept used is shown to be very effective in reducing resource requirements and enhancing speed.
The memristive crossbar aims to implement analog weighted neural network, however, the realistic implementation of such crossbar arrays is not possible due to limited switching states of memristive devices. In this work, we propose the design of an analog deep neural network with binary weight update through backpropagation algorithm using binary state memristive devices. We show that such networks can be successfully used for image processing task and has the advantage of lower power consumption and small on-chip area in comparison with digital counterparts. The proposed network was benchmarked for MNIST handwritten digits recognition achieving an accuracy of approximately 90%.
The development of memristive device technologies has reached a level of maturity to enable the design of complex and large-scale hybrid memristive-CMOS neural processing systems. These systems offer promising solutions for implementing novel in-memory computing architectures for machine learning and data analysis problems. We argue that they are also ideal building blocks for the integration in neuromorphic electronic circuits suitable for ultra-low power brain-inspired sensory processing systems, therefore leading to the innovative solutions for always-on edge-computing and Internet-of-Things (IoT) applications. Here we present a recipe for creating such systems based on design strategies and computing principles inspired by those used in mammalian brains. We enumerate the specifications and properties of memristive devices required to support always-on learning in neuromorphic computing systems and to minimize their power consumption. Finally, we discuss in what cases such neuromorphic systems can complement conventional processing ones and highlight the importance of exploiting the physics of both the memristive devices and of the CMOS circuits interfaced to them.
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such crossbars in neuromorphic computing circuits, variations of current-voltage characteristics of crosspoint devices must be substantially lower than those of memory cells with select transistors. Apparently, this requirement explains why there were so few demonstrations of neuromorphic system prototypes using passive crossbars. Here we report a 64x64 passive metal-oxide memristor crossbar circuit with ~99% device yield, based on a foundry-compatible fabrication process featuring etch-down patterning and low-temperature budget, conducive to vertical integration. The achieved ~26% variations of switching voltages of our devices were sufficient for programming 4K-pixel gray-scale patterns with an average tuning error smaller than 4%. The analog properties were further verified by experimentally demonstrating MNIST pattern classification with a fidelity close to the software-modeled limit for a network of this size, with an ~1% average error of import of ex-situ-calculated synaptic weights. We believe that our work is a significant improvement over the state-of-the-art passive crossbar memories in both complexity and analog properties.
Training of deep neural networks (DNNs) is a computationally intensive task and requires massive volumes of data transfer. Performing these operations with the conventional von Neumann architectures creates unmanageable time and power costs. Recent studies have shown that mixed-signal designs involving crossbar architectures are capable of achieving acceleration factors as high as 30,000x over the state of the art digital processors. These approaches involve utilization of non-volatile memory (NVM) elements as local processors. However, no technology has been developed to-date that can satisfy the strict device requirements for the unit cell. This paper presents the superconducting nanowire-based processing element as a cross-point device. The unit cell has many programmable non-volatile states that can be used to perform analog multiplication. Importantly, these states are intrinsically discrete due to quantization of flux, which provides symmetric switching characteristics. Operation of these devices in a crossbar is described and verified with electro-thermal circuit simulations. Finally, validation of the concept in an actual DNN training task is shown using an emulator.
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