Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userIMAC: In-memory multi-bit Multiplication andACcumulation in 6T SRAM Array
61
0
0.0
(
0
)
Added by
Sangamesh Kodge
Publication date
2020
fields
Informatics Engineering
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
`In-memory computing is being widely explored as a novel computing paradigm to mitigate the well known memory bottleneck. This emerging paradigm aims at embedding some aspects of computations inside the memory array, thereby avoiding frequent and expensive movement of data between the compute unit and the storage memory. In-memory computing with respect to Silicon memories has been widely explored on various memory bit-cells. Embedding computation inside the 6 transistor (6T) SRAM array is of special interest since it is the most widely used on-chip memory. In this paper, we present a novel in-memory multiplication followed by accumulation operation capable of performing parallel dot products within 6T SRAM without any changes to the standard bitcell. We, further, study the effect of circuit non-idealities and process variations on the accuracy of the LeNet-5 and VGG neural network architectures against the MNIST and CIFAR-10 datasets, respectively. The proposed in-memory dot-product mechanism achieves 88.8% and 99% accuracy for the CIFAR-10 and MNIST, respectively. Compared to the standard von Neumann system, the proposed system is 6.24x better in energy consumption and 9.42x better in delay.
rate research
Read More
A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel charge-domain multiply-and-accumulate (MAC) mechanism and circuitry to achieve superior linearity under process variations compared to conventional IMC designs. The adopted semi-parallel architecture efficiently stores filters from multiple CNN layers by sharing eight standard 6T SRAM cells with one charge-domain MAC circuit. Moreover, up to six levels of bit-width of weights with two encoding schemes and eight levels of input activations are supported. A 7-bit charge-injection SAR (ciSAR) analog-to-digital converter (ADC) getting rid of sample and hold (S&H) and input/reference buffers further improves the overall energy efficiency and throughput. A 65-nm prototype validates the excellent linearity and computing accuracy of CAP-RAM. A single 512x128 macro stores a complete pruned and quantized CNN model to achieve 98.8% inference accuracy on the MNIST data set and 89.0% on the CIFAR-10 data set, with a 573.4-giga operations per second (GOPS) peak throughput and a 49.4-tera operations per second (TOPS)/W energy efficiency.
A mass of data transfer between the processing and storage units has been the leading bottleneck in modern Von-Neuman computing systems, especially when used for Artificial Intelligence (AI) tasks. Computing-in-Memory (CIM) has shown great potential to reduce both latency and power consumption. However, the conventional analog CIM schemes are suffering from reliability issues, which may significantly degenerate the accuracy of the computation. Recently, CIM schemes with digitized input data and weights have been proposed for high reliable computing. However, the properties of the digital memory and input data are not fully utilized. This paper presents a novel low power CIM scheme to further reduce the power consumption by using a Modified Radix-4 (M-RD4) booth algorithm at the input and a Modified Canonical Signed Digit (M-CSD) for the network weights. The simulation results show that M-Rd4 and M-CSD reduce the ratio of $1times1$ by 78.5% on LeNet and 80.2% on AlexNet, and improve the computing efficiency by 41.6% in average. The computing-power rate at the fixed-point 8-bit is 60.68 TOPS/s/W.
Nearest neighbor (NN) search is an essential operation in many applications, such as one/few-shot learning and image classification. As such, fast and low-energy hardware support for accurate NN search is highly desirable. Ternary content-addressable memories (TCAMs) have been proposed to accelerate NN search for few-shot learning tasks by implementing $L_infty$ and Hamming distance metrics, but they cannot achieve software-comparable accuracies. This paper proposes a novel distance function that can be natively evaluated with multi-bit content-addressable memories (MCAMs) based on ferroelectric FETs (FeFETs) to perform a single-step, in-memory NN search. Moreover, this approach achieves accuracies comparable to floating-point precision implementations in software for NN classification and one/few-shot learning tasks. As an example, the proposed method achieves a 98.34% accuracy for a 5-way, 5-shot classification task for the Omniglot dataset (only 0.8% lower than software-based implementations) with a 3-bit MCAM. This represents a 13% accuracy improvement over state-of-the-art TCAM-based implementations at iso-energy and iso-delay. The presented distance function is resilient to the effects of FeFET device-to-device variations. Furthermore, this work experimentally demonstrates a 2-bit implementation of FeFET MCAM using AND arrays from GLOBALFOUNDRIES to further validate proof of concept.
Hyperdimensional Computing (HDC) is an emerging computational framework that mimics important brain functions by operating over high-dimensional vectors, called hypervectors (HVs). In-memory computing implementations of HDC are desirable since they can significantly reduce data transfer overheads. All existing in-memory HDC platforms consider binary HVs where each dimension is represented with a single bit. However, utilizing multi-bit HVs allows HDC to achieve acceptable accuracies in lower dimensions which in turn leads to higher energy efficiencies. Thus, we propose a highly accurate and efficient multi-bit in-memory HDC inference platform called MIMHD. MIMHD supports multi-bit operations using ferroelectric field-effect transistor (FeFET) crossbar arrays for multiply-and-add and FeFET multi-bit content-addressable memories for associative search. We also introduce a novel hardware-aware retraining framework (HWART) that trains the HDC model to learn to work with MIMHD. For six popular datasets and 4000 dimension HVs, MIMHD using 3-bit (2-bit) precision HVs achieves (i) average accuracies of 92.6% (88.9%) which is 8.5% (4.8%) higher than binary implementations; (ii) 84.1x (78.6x) energy improvement over a GPU, and (iii) 38.4x (34.3x) speedup over a GPU, respectively. The 3-bit $times$ is 4.3x and 13x faster and more energy-efficient than binary HDC accelerators while achieving similar accuracies.
Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying textit{von-Neumann} computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-art computing systems, to a large extent, results from the well-known textit{von-Neumann bottleneck}. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications like artificial intelligence, machine learning textit{etc}. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable textit{in-memory} Boolean computations. In this manuscript, we present an augmented version of the conventional SRAM bit-cells, called textit{the X-SRAM}, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations including NAND, NOR, IMP (implication), XOR logic gates with respect to different bit-cell topologies $-$ the 8T cell and the 8$^+$T Differential cell. In addition, we also present a novel textit{`read-compute-store} scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using predictive transistor models and Monte-Carlo variation analysis.
suggested questions
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
